SEMICONDUCTOR DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Yang Xu of Suwon-si (KR)

Nam Kyu Cho of Yongin-si (KR)

Seok Hoon Kim of Suwon-si (KR)

Yong Seung Kim of Seongnam-si (KR)

Pan Kwi Park of Incheon (KR)

Dong Suk Shin of Suwon-si (KR)

Sang Gil Lee of Ansan-si (KR)

Si Hyung Lee of Hwaseong-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240332424 titled 'SEMICONDUCTOR DEVICE

The semiconductor device described in the abstract includes fin-shaped patterns in different regions of the substrate, with field insulating films covering the sidewalls of the patterns. Source/drain patterns connected to the fin-shaped patterns are made of silicon-germanium and are separated by air gaps defined by the field insulating film.

Fin-shaped patterns in different regions of the substrate
Field insulating films covering sidewalls of the patterns
Source/drain patterns made of silicon-germanium
Air gaps defined by the field insulating film

Potential Applications: - Advanced semiconductor devices - High-performance electronic components - Integrated circuits

Problems Solved: - Enhanced performance and efficiency of semiconductor devices - Improved isolation and connectivity of components

Benefits: - Increased speed and reliability of electronic devices - Reduction in power consumption - Miniaturization of components

Commercial Applications: Title: Advanced Semiconductor Devices for High-Performance Electronics This technology can be utilized in the production of cutting-edge electronic devices, leading to faster and more efficient performance in various industries such as telecommunications, computing, and consumer electronics.

Questions about the technology: 1. How does the use of silicon-germanium in source/drain patterns improve device performance? 2. What are the advantages of having air gaps defined by the field insulating film in the semiconductor device design?

Original Abstract Submitted

a semiconductor device including first fin-shaped patterns in a first region of a substrate and spaced apart from each other in a first direction, second fin-shaped patterns in a second region of the substrate and spaced apart from each other in a second direction, a first field insulating film on the substrate and covering sidewalls of the first fin-shaped patterns, a second field insulating film on the substrate and covering sidewalls of the second fin-shaped patterns, a first source/drain pattern on the first field insulating film, connected to the first fin-shaped patterns, and including a first silicon-germanium pattern, and a second source/drain pattern on the second field insulating film, connected to the second fin-shaped patterns, and including a second silicon-germanium pattern, the second source/drain pattern and the second field insulating film defining one or more first air gaps therebetween may be provided.