Samsung electronics co., ltd. (20240315009). SEMICONDUCTOR MEMORY DEVICE simplified abstract
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Seohyeong Jang of Suwon-si (KR)
SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240315009 titled 'SEMICONDUCTOR MEMORY DEVICE
The abstract describes a semiconductor memory device with an active pattern enclosed by a device isolation pattern, and a word line crossing the active pattern and device isolation pattern. The word line includes first and second gate electrodes with different work functions.
- The semiconductor memory device has an active pattern enclosed by a device isolation pattern.
- The word line crosses the active pattern and device isolation pattern in a first direction parallel to the substrate's bottom surface.
- The word line includes first and second gate electrodes adjacent to each other in the first direction.
- The second gate electrode has a greater work function than the first gate electrode.
Potential Applications: - This technology can be used in various memory storage devices such as DRAM, SRAM, and flash memory. - It can also be applied in microprocessors and other integrated circuits requiring high-speed data storage.
Problems Solved: - Enhances the performance and efficiency of semiconductor memory devices. - Improves the reliability and stability of memory storage in electronic devices.
Benefits: - Increased data processing speed and reduced power consumption. - Enhanced memory density and storage capacity. - Improved overall performance and longevity of electronic devices.
Commercial Applications: Title: Advanced Semiconductor Memory Devices for High-Performance Electronics This technology can be utilized in the production of high-speed memory modules for computers, smartphones, and other electronic devices. It can also benefit the development of advanced data storage solutions for cloud computing and artificial intelligence applications.
Questions about Semiconductor Memory Devices: 1. How does the different work functions of the gate electrodes impact the performance of the semiconductor memory device? - The different work functions of the gate electrodes allow for more efficient control of the flow of electrons, enhancing the device's overall performance.
2. What are the potential challenges in implementing this technology in mass production? - Some challenges may include ensuring uniformity in the fabrication process to maintain consistent performance across all memory devices.
Original Abstract Submitted
a semiconductor memory device is provided. the semiconductor memory device includes: an active pattern provided on a substrate and enclosed by a device isolation pattern; and a word line crossing the active pattern and the device isolation pattern in a first direction parallel to a bottom surface of the substrate, and including a first gate electrode and a second gate electrode, which are adjacent to each other in the first direction. a second work function of the second gate electrode is greater than a first work function of the first gate electrode.