Samsung electronics co., ltd. (20240282387). MEMORY DEVICE simplified abstract
MEMORY DEVICE
Organization Name
Inventor(s)
Eunhyang Park of Suwon-si (KR)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240282387 titled 'MEMORY DEVICE
The memory device described in the patent application consists of a cell region with multiple memory cells and a peripheral circuit region with a row decoder connected to the memory cells via wordlines, page buffers connected to the memory cells via bitlines, and control logic managing the row decoder and page buffers.
- The row decoder sequentially applies different levels of read voltages to selected wordlines among the array of wordlines.
- Each page buffer includes a sensing node connected to a bitline, and the voltages of the sensing nodes in a subset of page buffers decrease uniquely as each read voltage is applied to the selected wordline.
Potential Applications: - This technology can be used in various memory devices such as solid-state drives, embedded systems, and mobile devices. - It can enhance the performance and efficiency of memory operations in electronic devices.
Problems Solved: - The technology addresses the need for efficient and reliable memory access in electronic devices. - It improves the speed and accuracy of data retrieval from memory cells.
Benefits: - Faster data access and retrieval. - Improved energy efficiency in memory operations. - Enhanced overall performance of electronic devices.
Commercial Applications: Title: Advanced Memory Device Technology for Enhanced Performance This technology can be utilized in the development of high-speed memory solutions for consumer electronics, data centers, and IoT devices. It can lead to more efficient and reliable memory systems, improving the user experience and overall performance of electronic devices.
Prior Art: Readers interested in exploring prior art related to this technology can start by researching advancements in memory cell design, row decoder technology, and page buffer configurations in memory devices.
Frequently Updated Research: Researchers are continually exploring ways to optimize memory access and data retrieval in electronic devices. Stay updated on the latest developments in memory technology to leverage advancements in this field.
Questions about Memory Device Technology: 1. How does this memory device technology compare to traditional memory architectures? - This technology offers improved efficiency and performance compared to traditional memory architectures by optimizing memory access and data retrieval processes.
2. What are the potential challenges in implementing this memory device technology in real-world applications? - Some challenges may include integrating the technology into existing memory systems, ensuring compatibility with different devices, and optimizing performance for specific use cases.
Original Abstract Submitted
a memory device includes a cell region in which a plurality of memory cells are arranged and a peripheral circuit region in which a row decoder is connected to the plurality of memory cells through a plurality of wordlines, a plurality of page buffers connected to the plurality of memory cells through a plurality of bitlines, and a control logic controlling the row decoder and the plurality of page buffers are arranged. the row decoder inputs a plurality of read voltages having different levels to a selected wordline among the plurality of wordlines in sequence. each of the plurality of page buffers includes a sensing node connected to one of the plurality of bitlines. voltages of the sensing nodes included in the page buffers of a portion of the plurality of page buffers decrease differently while each of the plurality of read voltages is input to the selected wordline.