SEMICONDUCTOR MEMORY DEVICE

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SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240276713 titled 'SEMICONDUCTOR MEMORY DEVICE

The semiconductor memory device described in the abstract includes a memory cell that extends in multiple directions and consists of various components such as transistors, charge storage elements, bit lines, selection lines, and gate lines.

The memory cell extends in a first horizontal direction, a second horizontal direction, and a vertical direction.
It includes a first transistor with a first channel structure and a second transistor with a second channel structure.
A charge storage element is electrically connected to the second channel structure and adjacent to the first channel structure.
A first bit line is connected to the first end of the first channel structure and extends in the second horizontal direction.
A selection line is connected to the second end of the first channel structure and extends in the second horizontal direction.
A second bit line is connected to the second end of the second channel structure and extends in the second horizontal direction.
A gate line extends in the vertical direction.

Potential Applications: - This technology can be used in various electronic devices such as smartphones, tablets, and computers. - It can also be applied in data storage systems, servers, and other memory-intensive applications.

Problems Solved: - The memory device addresses the need for efficient and reliable data storage solutions. - It improves the performance and capacity of semiconductor memory devices.

Benefits: - Enhanced data storage capabilities. - Improved speed and efficiency in data retrieval. - Higher reliability and durability of memory cells.

Commercial Applications: Title: Advanced Semiconductor Memory Device for Enhanced Data Storage This technology can be commercially utilized in the production of consumer electronics, data centers, and other high-tech devices requiring advanced memory solutions. The market implications include increased demand for faster and more reliable memory devices in various industries.

Questions about Semiconductor Memory Devices: 1. How does the design of this memory cell contribute to its overall performance and efficiency? 2. What are the potential challenges in implementing this technology on a larger scale in commercial products?

Original Abstract Submitted

a semiconductor memory device includes a memory cell that extends in a first horizontal direction, a second horizontal direction that intersects the first horizontal direction, and a vertical direction. the memory cell includes a first transistor including a first channel structure, a second transistor including a second channel structure, a charge storage element electrically connected to a first end of the second channel structure and adjacent to the first channel structure a first bit line electrically connected to a first end of the first channel structure and that extends in the second horizontal direction, a selection line electrically connected to a second end of the first channel structure and that extends in the second horizontal direction, a second bit line electrically connected to a second end of the second channel structure and that extends in the second horizontal direction, and a gate line that extends in the vertical direction.