Samsung electronics co., ltd. (20240276711). SEMICONDUCTOR DEVICES simplified abstract
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Seungwoo Jang of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240276711 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the abstract includes various components such as a bit line, gate electrode, gate insulation pattern, first channel, and contact plug. The first channel is made of a material called spinel IGZO.
- The semiconductor device features a bit line on a substrate.
- A gate electrode is positioned on the bit line.
- A gate insulation pattern is located on the sidewall of the gate electrode.
- The first channel connects the upper surface of the bit line and the sidewall of the gate insulation pattern.
- A contact plug connects to the upper surface of the first channel, which is made of spinel IGZO.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices. - It may find applications in the development of high-performance electronic devices.
Problems Solved: - Enhances the performance and efficiency of semiconductor devices. - Provides a reliable connection between different components of the device.
Benefits: - Improved functionality and performance of electronic devices. - Enhanced connectivity and integration within semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Devices with Spinell IGZO Technology This technology could be utilized in the production of smartphones, tablets, and other consumer electronics. It may also have applications in the automotive industry for advanced driver assistance systems.
Questions about Semiconductor Devices with Spinell IGZO Technology: 1. How does the use of spinel IGZO in the first channel improve the performance of the semiconductor device? 2. What are the potential cost implications of implementing this technology in mass production?
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further enhance the capabilities of semiconductor devices. Stay updated on the latest advancements in spinel IGZO technology for semiconductor applications.
Original Abstract Submitted
the semiconductor device may include a bit line on a substrate, a gate electrode on the bit line, a gate insulation pattern on a sidewall of the gate electrode, a first channel contacting an upper surface of the bit line and the sidewall of the gate insulation pattern and a contact plug contacting an upper surface of the first channel. the first channel may include a spinel igzo.