Samsung electronics co., ltd. (20240274757). LIGHT-EMITTING DEVICE simplified abstract
LIGHT-EMITTING DEVICE
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LIGHT-EMITTING DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240274757 titled 'LIGHT-EMITTING DEVICE
The patent application describes a light-emitting device that includes a semiconductor light-emitting structure, a wavelength conversion layer, and a multi-inorganic-film coating layer.
- The semiconductor light-emitting structure emits light with a first wavelength.
- The wavelength conversion layer converts the light with the first wavelength into light with a second wavelength that is greater than the first wavelength.
- The multi-inorganic-film coating layer includes a distributed Bragg reflector structure with alternately stacked inorganic films.
- The uppermost inorganic film in the multi-inorganic-film coating layer has the greatest thickness in a direction perpendicular to the light-emitting surface.
- The refractive indices of the inorganic films are selected within specific ranges.
Potential Applications: - Lighting applications - Display technologies - Medical devices - Communication systems
Problems Solved: - Efficient light emission - Wavelength conversion - Enhanced light output
Benefits: - Improved energy efficiency - Enhanced light quality - Versatile applications
Commercial Applications: Title: "Innovative Light-Emitting Device for Various Industries" This technology can be used in various industries such as lighting, displays, medical equipment, and communication systems, offering improved efficiency and performance.
Questions about the technology: 1. How does the multi-inorganic-film coating layer contribute to the efficiency of the light-emitting device? 2. What are the specific advantages of using a distributed Bragg reflector structure in the coating layer?
Original Abstract Submitted
a light-emitting device includes: a semiconductor light-emitting structure configured to emit light having a first wavelength; a wavelength conversion layer configured to convert the light which has the first wavelength into light having a second wavelength that is greater than the first wavelength; and a multi-inorganic-film coating layer spaced apart from a light-emitting surface with the wavelength conversion layer therebetween. the multi-inorganic-film coating layer includes a distributed bragg reflector structure in which first and second inorganic films are alternately stacked, and an uppermost inorganic film farthest from the wavelength conversion layer from among the plurality of inorganic films has a greatest thickness in a first direction perpendicular to the light-emitting surface of the semiconductor light-emitting structure. the first refractive index is selected from a range of about 1.1 to about 1.5, and the second refractive index is selected from a range of about 2.0 to about 3.0.