Samsung electronics co., ltd. (20240274686). STACKED INTEGRATED CIRCUIT DEVICE simplified abstract
STACKED INTEGRATED CIRCUIT DEVICE
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STACKED INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240274686 titled 'STACKED INTEGRATED CIRCUIT DEVICE
The abstract describes a stacked integrated circuit device with multiple layers and regions, including active regions, gate patterns, and dielectric layers.
- Lower active region with a lower gate pattern and lower dielectric layer
- Intermediate insulating layer on the lower active region
- Upper active region on the intermediate insulating layer
- Upper gate pattern surrounding the upper active region
- Upper dielectric layer between the upper active region and the upper gate pattern
This design allows for precise vertical alignment of the different layers and regions within the integrated circuit device.
Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuit design
Problems Solved: - Improved vertical alignment in stacked integrated circuit devices - Enhanced performance and reliability of electronic components
Benefits: - Increased efficiency in semiconductor manufacturing - Higher quality integrated circuit devices - Enhanced functionality and performance of electronic devices
Commercial Applications: Title: Advanced Stacked Integrated Circuit Devices for Enhanced Performance This technology can be used in various commercial applications such as: - Mobile devices - Computers - Automotive electronics
Frequently Updated Research: Researchers are continually exploring new materials and processes to further improve the performance and efficiency of stacked integrated circuit devices.
Questions about Stacked Integrated Circuit Devices: 1. How does the vertical alignment of layers impact the performance of integrated circuit devices? 2. What are the key challenges in manufacturing stacked integrated circuit devices?
Original Abstract Submitted
a stacked integrated circuit device, including a lower active region, a lower gate pattern surrounding the lower active region, a lower dielectric layer between the lower active region and the lower gate pattern, an intermediate insulating layer on the lower active region, an upper active region on the intermediate insulating layer, an upper gate pattern surrounding the upper active region and covering the lower gate pattern, and an upper dielectric layer between the upper active region and the upper gate pattern, wherein an upper surface of the lower gate pattern is located lower in a vertical direction than an upper surface of the intermediate insulating layer, and the lower gate pattern surrounds at least a portion of a side surface of the intermediate insulating layer.
