SEMICONDUCTOR DEVICES

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SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240268103 titled 'SEMICONDUCTOR DEVICES

The semiconductor device described in the patent application consists of a first active pattern protruding from a substrate and extending parallel to the substrate's upper surface, along with first and second recesses intersecting the first active pattern in a direction perpendicular to its extension.

The device includes a first gate structure in the first recess, comprising a first gate oxide layer, a first gate pattern, and a first capping pattern.
Additionally, there is a second gate structure in the second recess, consisting of a second gate oxide layer, a second gate pattern, and a second capping pattern.
A first metal liner pattern surrounds part of the first active pattern's sidewall, making direct contact with the first gate pattern's sidewall.
A second metal liner pattern surrounds another part of the first active pattern's sidewall, directly contacting the second gate pattern's sidewall.

Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices for various electronic applications. - It can improve the performance and efficiency of integrated circuits and microprocessors.

Problems Solved: - Enhances the precision and functionality of semiconductor devices. - Improves the integration of different components on a single chip.

Benefits: - Increased speed and reliability of electronic devices. - Enhanced overall performance of semiconductor components.

Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be applied in the production of high-speed processors, memory chips, and other electronic devices, catering to industries such as telecommunications, computing, and consumer electronics.

Questions about the technology: 1. How does this semiconductor device technology improve the efficiency of electronic devices? 2. What are the specific advantages of using metal liner patterns in semiconductor manufacturing processes?

Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology, particularly in the integration of gate structures and metal liner patterns for improved performance and functionality.

Original Abstract Submitted

a semiconductor device includes a first active pattern protruding from a substrate and extending in a first direction parallel to an upper surface of the substrate; first and second recesses crossing the first active pattern in a second direction perpendicular to the first direction; a first gate structure in the first recess, and including a first gate oxide layer, a first gate pattern and a first capping pattern; a second gate structure in the second recess, and including a second gate oxide layer, a second gate pattern and a second capping pattern; a first metal liner pattern surrounding a portion of a sidewall of the first active pattern, and directly contacting a sidewall of the first gate pattern; and a second metal liner pattern surrounding a portion of the sidewall of the first active pattern, and directly contacting a sidewall of the second gate pattern.