Samsung electronics co., ltd. (20240258437). THREE-DIMENSIONAL STACKED FIELD EFFECT TRANSISTOR
THREE-DIMENSIONAL STACKED FIELD EFFECT TRANSISTOR
Organization Name
Inventor(s)
THREE-DIMENSIONAL STACKED FIELD EFFECT TRANSISTOR
This abstract first appeared for US patent application 20240258437 titled 'THREE-DIMENSIONAL STACKED FIELD EFFECT TRANSISTOR
Original Abstract Submitted
a 3d stacked fet may include a back-side wiring layer including a first back-side power line and a second back-side power line, a first fet on the back-side wiring layer, a second fet over the first fet, a front-side wiring layer over the second fet, a first through-electrode connecting the first fet to the second fet, and a second through-electrode connecting the front-side and back-side power lines. the front-side wiring layer may extend in a first direction and may include a front-side power line connected to the second back-side power line. the first fet and the second fet may share a gate extending in a second direction. each of the first fet and the second fet may include a source and a drain respectively on both sides of the gate in the first direction, and a channel between the source and the drain and surrounded by the gate.