SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

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SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

This abstract first appeared for US patent application 20240258430 titled 'SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

Original Abstract Submitted

disclosed is a semiconductor device including a first channel layer on a substrate, and a second channel layer on the first channel layer, the first and second channel layers extending in a first direction while being spaced apart from the substrate, and including a 2d semiconductor material, a gate structure on the substrate, the gate structure extending in a second direction, and being penetrated by the first and second channel layers, and source/drain contacts on side surfaces of the gate structure and being connected to the first and second channel layers. the gate structure includes a first gate portion between the substrate and the first channel layer and having a first gate length, a second gate portion between the first and second channel layers and having a second gate length, and a third gate portion on an upper surface of the second channel layer and having a third gate length.