Samsung electronics co., ltd. (20240258313). SEMICONDUCTOR DEVICE simplified abstract
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Young Mook Oh of Hwaseong-si (KR)
Hae Geon Jung of Yongin-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240258313 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract includes a substrate, a first base fin protruding from the substrate, and a first fin type pattern protruding from the first base fin.
- The first base fin has a first sidewall and a second sidewall, both extending in the first direction.
- The first sidewall of the first base fin defines a first deep trench, while the second sidewall defines a second deep trench.
- The depth of the first deep trench is greater than the depth of the second deep trench.
Potential Applications: - This technology could be used in the manufacturing of advanced semiconductor devices. - It may find applications in the electronics industry for improved performance and efficiency.
Problems Solved: - Enhances the design and functionality of semiconductor devices. - Allows for more precise and intricate patterns on the semiconductor substrate.
Benefits: - Improved performance and efficiency in semiconductor devices. - Enhanced design capabilities for manufacturers.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology could be utilized by semiconductor manufacturers to create cutting-edge devices with improved performance and efficiency, potentially leading to a competitive advantage in the market.
Questions about the technology: 1. How does the depth of the deep trenches impact the performance of the semiconductor device?
- The depth of the deep trenches affects the overall structure and functionality of the device, potentially influencing its performance metrics.
2. What are the potential challenges in implementing this technology on a large scale?
- Large-scale implementation may require significant investment in manufacturing processes and equipment to ensure consistent and reliable results.
Original Abstract Submitted
a semiconductor device is provided. the semiconductor device includes a substrate, a first base fin protruding from the substrate and extending in a first direction, and a first fin type pattern protruding from the first base fin and extending in the first direction. the first base fin includes a first sidewall and a second sidewall, the first and second sidewalls extending in the first direction, the first sidewall opposite to the second sidewall, the first sidewall of the first base fin at least partially defines a first deep trench, the second sidewall of the first base fin at least partially defines a second deep trench, and a depth of the first deep trench is greater than a depth of the second deep trench.