Samsung electronics co., ltd. (20240258157). WIRING STRUCTURE AND SEMICONDUCTOR DEVICE COMPRISING THE SAME
WIRING STRUCTURE AND SEMICONDUCTOR DEVICE COMPRISING THE SAME
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WIRING STRUCTURE AND SEMICONDUCTOR DEVICE COMPRISING THE SAME
This abstract first appeared for US patent application 20240258157 titled 'WIRING STRUCTURE AND SEMICONDUCTOR DEVICE COMPRISING THE SAME
Original Abstract Submitted
a wiring structure includes an etch stop film disposed on a substrate. a first insulating film is disposed on the etch stop film. a first wiring layer extends in a vertical direction perpendicular to an upper surface of the substrate and extends through the first insulating film and the etch stop film. a sidewall of the first wiring layer forms a first inclination angle of about 88 degrees to about 90 degrees with respect to a first horizontal direction parallel to the upper surface of the substrate. a surface of the first insulating film and a surface of the etch stop film in direct contact with the first wiring layer have a carbon (c) concentration less than or equal to about 3 at %.