Samsung electronics co., ltd. (20240256848). HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT simplified abstract
HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
Organization Name
Inventor(s)
Borna J. Obradovic of Leander TX (US)
Titash Rakshit of Austin TX (US)
Mark S. Rodder of Dallas TX (US)
HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240256848 titled 'HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
The abstract describes a neuromorphic device designed for analog computation of a linear combination of input signals, such as in an artificial neuron. The device allows for non-volatile programming of weights, fast evaluation, and programming, and can be fabricated at high density as part of a group of neuromorphic devices. It is structured as a vertical stack of flash-like cells with a common control gate contact and individually contacted source-drain regions, enabling efficient use of layout resources.
- Vertical stack of flash-like cells
- Non-volatile programming of weights
- Fast evaluation and programming
- High-density fabrication
- Efficient use of layout resources
Potential Applications: - Artificial intelligence - Robotics - Signal processing
Problems Solved: - Efficient analog computation - Non-volatile programming - High-density integration
Benefits: - Fast and accurate computation - Versatile programming options - Space-efficient design
Commercial Applications: Neuromorphic computing in AI systems for various industries, including healthcare, finance, and automotive.
Questions about Neuromorphic Device: 1. How does the vertical stacking of flash-like cells contribute to the efficiency of the device? 2. What are the key advantages of non-volatile programming in this context?
Original Abstract Submitted
a neuromorphic device for the analog computation of a linear combination of input signals, for use, for example, in an artificial neuron. the neuromorphic device provides non-volatile programming of the weights, and fast evaluation and programming, and is suitable for fabrication at high density as part of a plurality of neuromorphic devices. the neuromorphic device is implemented as a vertical stack of flash-like cells with a common control gate contact and individually contacted source-drain (sd) regions. the vertical stacking of the cells enables efficient use of layout resources.