Samsung electronics co., ltd. (20240256848). HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
Organization Name
Inventor(s)
Borna J. Obradovic of Leander TX US
Titash Rakshit of Austin TX US
Mark S. Rodder of Dallas TX US
HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
This abstract first appeared for US patent application 20240256848 titled 'HIGH-DENSITY NEUROMORPHIC COMPUTING ELEMENT
Original Abstract Submitted
a neuromorphic device for the analog computation of a linear combination of input signals, for use, for example, in an artificial neuron. the neuromorphic device provides non-volatile programming of the weights, and fast evaluation and programming, and is suitable for fabrication at high density as part of a plurality of neuromorphic devices. the neuromorphic device is implemented as a vertical stack of flash-like cells with a common control gate contact and individually contacted source-drain (sd) regions. the vertical stacking of the cells enables efficient use of layout resources.