SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN

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SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240250169 titled 'SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN

The semiconductor device described in the abstract includes an active pattern with a vertical active portion and a first bend portion, a gate electrode spaced apart from the active pattern, an etch stop layer between the gate electrode and the first bend portion, a dielectric layer between the active pattern and the gate electrode, and a contact plug penetrating through the first bend portion.

Vertical active portion with a first bend portion for improved functionality.
Gate electrode positioned facing the vertical active portion for control.
Etch stop layer between the gate electrode and the first bend portion for protection.
Dielectric layer between the active pattern and the gate electrode for insulation.
Contact plug penetrating through the first bend portion for connectivity.

Potential Applications: - Semiconductor manufacturing - Electronics industry - Integrated circuits

Problems Solved: - Improved vertical active portion design - Enhanced control and connectivity features

Benefits: - Increased functionality and performance - Enhanced reliability and durability

Commercial Applications: Title: Advanced Semiconductor Devices for Enhanced Performance This technology can be used in the production of high-performance electronic devices, leading to improved efficiency and reliability in various industries such as telecommunications, computing, and consumer electronics.

Questions about Semiconductor Devices: 1. How does the first bend portion in the active pattern contribute to the device's performance? The first bend portion in the active pattern allows for improved functionality and connectivity within the semiconductor device, enhancing its overall performance.

2. What role does the etch stop layer play in the semiconductor device? The etch stop layer acts as a protective barrier between the gate electrode and the first bend portion, preventing unwanted etching and ensuring the device's integrity.

Original Abstract Submitted

a semiconductor device includes an active pattern having a vertical active portion extending in a vertical direction and a first bend portion bent from an upper region of the vertical active portion; a gate electrode spaced apart from the active pattern, wherein at least a portion thereof faces the vertical active portion; an etch stop layer in which at least a portion thereof is disposed between an upper surface of the gate electrode and the first bend portion; a dielectric layer in which at least a portion thereof is disposed between the active pattern and the gate electrode; and a contact plug disposed on the etch stop layer and at least penetrating through the first bend portion.