Samsung electronics co., ltd. (20240249760). MAGNETIC MEMORY DEVICE simplified abstract
MAGNETIC MEMORY DEVICE
Organization Name
Inventor(s)
Jeong-Heon Park of Hwaseong-si (KR)
YoungJun Cho of Hwaseong-si (KR)
Joonmyoung Lee of Gwacheon-si (KR)
Junho Jeong of Hwaseong-si (KR)
MAGNETIC MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240249760 titled 'MAGNETIC MEMORY DEVICE
The magnetic memory device described in the patent application consists of a pinned magnetic pattern, a free magnetic pattern, a tunnel barrier pattern, a top electrode, and a capping pattern.
- The device includes a pinned magnetic pattern and a free magnetic pattern stacked on a substrate.
- A tunnel barrier pattern is situated between the pinned and free magnetic patterns.
- A top electrode is placed on the free magnetic pattern.
- A capping pattern is located between the free magnetic pattern and the top electrode.
- The capping pattern comprises a lower capping pattern, an upper capping pattern, a first non-magnetic pattern, and a second non-magnetic pattern.
- The lower and upper capping patterns contain non-magnetic metals, while the first and second non-magnetic patterns consist of different metals from each other.
Potential Applications: - Data storage devices - Magnetic sensors - Spintronics applications
Problems Solved: - Enhanced magnetic memory performance - Improved data retention capabilities - Increased efficiency in data storage devices
Benefits: - Higher data storage density - Improved reliability and stability - Enhanced speed and performance of magnetic memory devices
Commercial Applications: Title: "Advanced Magnetic Memory Devices for Next-Generation Data Storage" This technology could revolutionize the data storage industry by providing more efficient and reliable magnetic memory devices for various applications, including consumer electronics, data centers, and industrial equipment.
Questions about Magnetic Memory Devices: 1. How does the capping pattern contribute to the overall performance of the magnetic memory device? The capping pattern helps protect the free magnetic pattern and top electrode while enhancing the device's stability and reliability.
2. What are the key advantages of using different metals in the first and second non-magnetic patterns? Using different metals in these patterns can optimize the device's magnetic properties and improve its overall performance.
Original Abstract Submitted
disclosed is a magnetic memory device including a pinned magnetic pattern and a free magnetic pattern that are sequentially stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a top electrode on the free magnetic pattern, and a capping pattern between the free magnetic pattern and the top electrode. the capping pattern includes a lower capping pattern, an upper capping pattern between the lower capping pattern and the top electrode, a first non-magnetic pattern between the lower capping pattern and the upper capping pattern, and a second non-magnetic pattern between the first non-magnetic pattern and the upper capping pattern. each of the lower capping pattern and the upper capping pattern includes a non-magnetic metal. the first non-magnetic pattern and the second non-magnetic pattern include different metals from each other.