IMAGE SENSOR PREVENTING IMAGE DEGRADATION

Organization Name

Inventor(s)

IMAGE SENSOR PREVENTING IMAGE DEGRADATION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240244351 titled 'IMAGE SENSOR PREVENTING IMAGE DEGRADATION

The abstract describes an image sensor with multiple pixels, each consisting of various transistors and capacitors connected to different power nodes and diffusion nodes.

Photo diode, transfer transistor, reset transistor, source follower transistor, precharge transistor, precharge select transistors, and capacitors are key components of each pixel.
The transfer transistor is connected between the photo diode and a floating diffusion node.
The reset transistor is connected between the floating diffusion node and a first power node.
The source follower transistor has a gate connected to the floating diffusion node and terminals connected to power nodes.
Precharge transistor, precharge select transistors, and capacitors help in the operation of the pixel.

Potential Applications:

Digital cameras
Smartphones
Surveillance cameras
Medical imaging devices

Problems Solved:

Improved image quality
Enhanced sensitivity to light
Reduced noise in captured images

Benefits:

Higher resolution images
Better low-light performance
Increased overall image sensor efficiency

Commercial Applications:

Consumer electronics industry
Security and surveillance industry
Medical imaging equipment manufacturers

Prior Art: Prior research on image sensor technology, pixel design, and transistor configurations can provide insights into the development of this innovation.

Frequently Updated Research: Ongoing studies on image sensor technology advancements, pixel optimization, and noise reduction techniques are relevant to this innovation.

Questions about Image Sensor Technology: 1. How does the pixel design impact the overall performance of the image sensor? 2. What are the key factors influencing the sensitivity of the image sensor?

Original Abstract Submitted

disclosed is an image sensor. each of a plurality of pixels includes a photo diode, a transfer transistor connected between the photo diode and a floating diffusion node, a reset transistor connected between the floating diffusion node and a first power node to which a first power supply voltage is applied, a first source follower transistor including a gate connected to the floating diffusion node, a first terminal connected to a second power node to which a second power supply voltage is applied, and a second terminal connected to a first node, a precharge transistor connected between the first node and a floating node, a first precharge select transistor connected between the floating node and a ground node, a second precharge select transistor connected between the first node and a second node, and a first capacitor connected between a gate of the precharge transistor and the floating node.