Samsung electronics co., ltd. (20240243205). SEMICONDUCTOR DEVICES simplified abstract
SEMICONDUCTOR DEVICES
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SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240243205 titled 'SEMICONDUCTOR DEVICES
The semiconductor device described in the abstract includes various components such as a bit line, gate electrode, gate insulation pattern, channel, oxide semiconductor pattern, and contact plug. The channel is made of an amorphous oxide semiconductor material, while the oxide semiconductor pattern is made of a crystalline oxide semiconductor material.
- The semiconductor device features a unique structure with different semiconductor materials in the channel and oxide semiconductor pattern.
- The integration of amorphous and crystalline oxide semiconductor materials enhances the performance and efficiency of the device.
- The design allows for improved conductivity and stability in the semiconductor device.
- The use of distinct semiconductor materials in different parts of the device optimizes its overall functionality.
- This innovation opens up possibilities for advanced semiconductor technology with enhanced capabilities.
Potential Applications: This technology can be applied in various electronic devices such as smartphones, tablets, computers, and other semiconductor-based products.
Problems Solved: The technology addresses the need for improved conductivity, stability, and efficiency in semiconductor devices.
Benefits: Enhanced performance, increased efficiency, improved conductivity, and optimized functionality in semiconductor devices.
Commercial Applications: Title: Advanced Semiconductor Technology for Enhanced Device Performance This technology can be utilized in the production of high-performance electronic devices, leading to improved market competitiveness and consumer satisfaction.
Prior Art: Researchers can explore prior studies on oxide semiconductor materials and their applications in semiconductor devices to further understand the innovation described in this patent application.
Frequently Updated Research: Researchers are constantly studying new semiconductor materials and structures to enhance the performance of electronic devices. Stay updated on the latest advancements in oxide semiconductor technology for potential future developments.
Questions about Semiconductor Device Technology: 1. How does the integration of different semiconductor materials in the device impact its overall performance? 2. What are the potential challenges in implementing this technology in mass production?
Original Abstract Submitted
a semiconductor device includes a bit line on a substrate, a gate electrode on the bit line, a gate insulation pattern on a sidewall of the gate electrode, a channel that contacts an upper surface of the bit line and a sidewall of the gate insulation pattern, an oxide semiconductor pattern that contacts an upper sidewall of the channel, and a contact plug that contacts an upper surface of the channel and an upper surface of the oxide semiconductor pattern. the channel includes an amorphous oxide semiconductor material. the oxide semiconductor pattern includes a crystalline oxide semiconductor material.
