Samsung electronics co., ltd. (20240222468). METHOD FOR FABRICATING SEMICONDUCTOR DEVICE simplified abstract
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyung Dong Kim of Suwon-si (KR)
Young Dae Cho of Suwon-si (KR)
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240222468 titled 'METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Simplified Explanation:
The method described in the patent application involves the fabrication of a semiconductor device by forming various layers and trenches on a substrate using etching and spacer material deposition techniques.
- The method includes forming an active pattern on a substrate.
- Sacrificial and semiconductor layers are alternately stacked on the active pattern.
- Dummy gate and source/drain trenches are formed by etching the stacked structure.
- Inner spacer material layers are deposited along the sidewalls and bottom surfaces of the trenches.
- Additional source/drain trenches are formed on the active pattern using isotropic etching.
Key Features and Innovation:
- Formation of source/drain trenches using etching techniques.
- Deposition of inner spacer material layers to enhance device performance.
- Alternating sacrificial and semiconductor layers for precise fabrication.
Potential Applications:
- Semiconductor manufacturing processes.
- Fabrication of advanced integrated circuits.
- Development of high-performance electronic devices.
Problems Solved:
- Precise control over the formation of source/drain trenches.
- Enhanced performance and reliability of semiconductor devices.
- Improved manufacturing efficiency.
Benefits:
- Higher device performance.
- Increased manufacturing precision.
- Enhanced reliability of semiconductor devices.
Commercial Applications:
The technology described in the patent application has potential commercial applications in the semiconductor industry for the fabrication of advanced electronic devices, integrated circuits, and other high-performance components. This innovation could lead to improved efficiency, performance, and reliability in semiconductor manufacturing processes.
Questions about Semiconductor Fabrication:
1. What are the key advantages of using inner spacer material layers in semiconductor device fabrication? 2. How does the alternating stacking of sacrificial and semiconductor layers contribute to the overall performance of the device?
Original Abstract Submitted
a method for fabricating a semiconductor device includes forming an active pattern on a substrate, forming sacrificial and semiconductor layers alternately stacked on the active pattern, forming a dummy gate and first source/drain trench on one side of the dummy gate by etching the stacked structure, forming a second source/drain trench on the active pattern by etching a sidewall of the sacrificial layer exposed to the first source/drain trench, forming a first inner spacer material layer along sidewall and bottom surfaces of the second source/drain trench, forming a second inner spacer material layer by anisotropic etching a first inner spacer material layer, and forming a third source/drain trench on the active pattern by isotropic etching.