SEMICONDUCTOR DEVICE, IMAGE SENSOR

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SEMICONDUCTOR DEVICE, IMAGE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240222401 titled 'SEMICONDUCTOR DEVICE, IMAGE SENSOR

The semiconductor device and image sensor described in the patent application involve a unique structure that includes a gate pattern, interlayer insulating layers, and contact plugs.

The semiconductor device features a gate pattern on a substrate, with interlayer insulating layers on the sidewall of the gate pattern.
A first contact plug passes through the interlayer insulating layers and is in contact with the substrate, with different widths in different parts of the plug.
The density of the first interlayer insulating layer is lower than that of the second interlayer insulating layer, providing specific electrical properties to the device.

Potential Applications: This technology could be used in various semiconductor devices, particularly in image sensors, where precise electrical connections are crucial.

Problems Solved: The innovation addresses the need for efficient and reliable electrical connections in semiconductor devices, improving overall performance and functionality.

Benefits: By optimizing the structure of the contact plugs and interlayer insulating layers, this technology enhances the electrical properties of semiconductor devices, leading to improved performance and reliability.

Commercial Applications: This technology could have significant commercial applications in the semiconductor industry, particularly in the development of advanced image sensors for various electronic devices.

Questions about the technology: 1. How does the density difference between the interlayer insulating layers impact the performance of the semiconductor device? 2. What specific advantages does the unique structure of the contact plugs provide in terms of electrical connectivity and reliability?

Original Abstract Submitted

a semiconductor device and an image sensor are disclosed. the semiconductor device includes: a gate pattern disposed on a substrate; a first interlayer insulating layer on a sidewall of the gate pattern; a second interlayer insulating layer on the gate pattern and the first interlayer insulating layer; and a first contact plug passing through the second interlayer insulating layer and the first interlayer insulating layer and being in contact with the substrate, where the first contact plug comprises a first contact part in the first interlayer insulating layer and a second contact part in the second interlayer insulating layer, a density of the first interlayer insulating layer is smaller than a density of the second interlayer insulating layer, the first contact part of the first contact plug has a first width, and the second contact part of the first contact plug has a second width smaller than the first width.