INTEGRATED CIRCUIT DEVICE

Organization Name

Inventor(s)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213302 titled 'INTEGRATED CIRCUIT DEVICE

Simplified Explanation: The patent application describes an integrated circuit device with a unique capacitor structure that includes alternating layers of ferroelectric and anti-ferroelectric materials to control the distribution of internal defect dipoles.

Key Features and Innovation:

Transistor on a substrate connected to a capacitor structure
Capacitor structure with alternating layers of ferroelectric and anti-ferroelectric materials
Control of internal defect dipoles distribution in the dielectric layer structure

Potential Applications: This technology could be used in various electronic devices requiring precise control over capacitor structures, such as memory devices, sensors, and communication systems.

Problems Solved: The technology addresses the need for improved control and stability of capacitor structures in integrated circuit devices.

Benefits:

Enhanced performance and reliability of integrated circuit devices
Improved control over internal defect dipoles distribution
Potential for increased efficiency and functionality in electronic devices

Commercial Applications: The technology could have significant implications in the semiconductor industry, particularly in the development of advanced memory devices and communication systems.

Prior Art: Prior research in the field of ferroelectric and anti-ferroelectric materials in capacitor structures can provide valuable insights into the development and applications of this technology.

Frequently Updated Research: Researchers are continuously exploring new materials and techniques to further enhance the performance and capabilities of capacitor structures in integrated circuit devices.

Questions about Capacitor Structures: 1. How do ferroelectric and anti-ferroelectric materials differ in capacitor structures? 2. What are the potential challenges in integrating this technology into existing electronic devices?

Original Abstract Submitted

an integrated circuit device may include a transistor on a substrate and a capacitor structure electrically connected to the transistor. the capacitor structure may include a first electrode, a dielectric layer structure on the first electrode, and a second electrode on the dielectric layer structure. the dielectric layer structure may include a plurality of first dielectric layers and a plurality of second dielectric layers that are alternately stacked. the plurality of first dielectric layers may include a ferroelectric material, and the plurality of second dielectric layers may include an anti-ferroelectric material. the distribution proportion of internal defect dipoles gradually may vary in a thickness direction of the dielectric layer structure.