SEMICONDUCTOR DEVICES

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SEMICONDUCTOR DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240213253 titled 'SEMICONDUCTOR DEVICES

Simplified Explanation: This patent application describes semiconductor devices with unique active patterns and channel patterns, as well as methods of forming them.

The semiconductor devices consist of first and second active patterns aligned along a first direction on a substrate.
These active patterns are separated by a first trench that defines a sidewall of the first active pattern.
Additionally, the devices include a channel pattern with semiconductor patterns stacked on the first active pattern, a dummy gate electrode, and a gate spacer on one side of the dummy gate electrode.

Key Features and Innovation:

Unique alignment of first and second active patterns on a substrate.
Presence of a first trench separating the active patterns.
Inclusion of a channel pattern with stacked semiconductor patterns and a dummy gate electrode.
Gate spacer covering a sidewall of the first active pattern.

Potential Applications: This technology could be used in the manufacturing of advanced semiconductor devices for various electronic applications.

Problems Solved: This technology addresses the need for improved semiconductor device designs with optimized active and channel patterns.

Benefits:

Enhanced performance and efficiency of semiconductor devices.
Improved alignment and separation of active patterns.
Potential for increased functionality in electronic applications.

Commercial Applications: The technology could be applied in the production of high-performance electronic devices such as smartphones, tablets, and computers, enhancing their speed and efficiency.

Prior Art: Readers can explore prior research on semiconductor device design and fabrication to understand the evolution of this technology.

Frequently Updated Research: Stay informed about the latest advancements in semiconductor device technology and manufacturing processes to keep up with industry trends.

Questions about Semiconductor Devices: 1. What are the key features of semiconductor devices described in this patent application? 2. How does the alignment of active patterns contribute to the performance of these semiconductor devices?

Original Abstract Submitted

semiconductor devices and methods of forming the same are provided. semiconductor devices may include first and second active patterns on a substrate. each of the first and second active patterns may extend in a first direction. the first and second active patterns may be aligned along the first direction and may be separated by a first trench extending in a second direction. the first trench may define a first sidewall of the first active pattern. the semiconductor devices may also include a channel pattern including first and second semiconductor patterns stacked on the first active pattern, a dummy gate electrode on the channel pattern and extending in the second direction, and a gate spacer on one side of the dummy gate electrode, the one side of the dummy gate electrode being adjacent to the first trench. the gate spacer may cover a first sidewall of the first active pattern.