INTEGRATED CIRCUIT DEVICE

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INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240196602 titled 'INTEGRATED CIRCUIT DEVICE

The patent application describes an integrated circuit device with various components such as word lines, bit lines, bit line contacts, doping contacts, cell pads, buried contacts, and conductive landing pads.

The device includes a substrate with an active region and a word line extending in a first horizontal direction.
A bit line extends on the word line in a second horizontal direction, with a bit line contact electrically connecting it to the active region.
A doping contact connects the bit line contact to the active region, with different thicknesses for the first and second doping contacts in the vertical direction.
The cell pad has a horizontal width greater than that of the active region, with a buried contact digging into one side wall of the cell pad.
A conductive landing pad faces the bit line in the first horizontal direction.

Potential Applications: - Memory devices - Microprocessors - Integrated circuits

Problems Solved: - Efficient electrical connections in integrated circuits - Enhanced performance and reliability of electronic devices

Benefits: - Improved functionality of electronic devices - Higher integration density - Enhanced signal transmission efficiency

Commercial Applications: Title: "Advanced Integrated Circuit Technology for Enhanced Performance" This technology can be used in various electronic devices such as smartphones, computers, and IoT devices, improving their overall performance and reliability.

Questions about the technology: 1. How does the different thickness of the doping contacts impact the performance of the integrated circuit device? 2. What are the specific advantages of the buried contact design in the cell pad for the overall functionality of the device?

Original Abstract Submitted

an integrated circuit device includes a substrate having an active region, a word line extending in the substrate in a first horizontal direction, a bit line extending on the word line in a second horizontal direction, a bit line contact electrically connecting the bit line to the active region, a doping contact connecting the bit line contact to the active region, a cell pad having a horizontal width greater than that of the active region, a buried contact that digs into one side wall of the cell pad, and a conductive landing pad facing the bit line in the first horizontal direction. the doping contact includes a first doping contact and a second doping contact, and a thickness of the first doping contact in the vertical direction is less than that of the second doping contact in the vertical direction.