Samsung electronics co., ltd. (20240188305). MEMORY DEVICES simplified abstract
MEMORY DEVICES
Organization Name
Inventor(s)
Hyunchul Sohn of Suwon-si (KR)
Kwangmin Park of Suwon-si (KR)
Jinmyung Choi of Suwon-si (KR)
MEMORY DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240188305 titled 'MEMORY DEVICES
Simplified Explanation
The memory device described in the abstract includes a substrate with first and second conductive lines, as well as first memory cells with switching devices and variable resistance materials. The switching devices are made of lanio material with specific compositions.
- The memory device includes a substrate, first and second conductive lines, and first memory cells with switching devices and variable resistance materials.
- The switching devices in the memory cells are made of lanio material with specific compositions.
Potential Applications of this Technology
The technology described in this patent application could be applied in:
- Non-volatile memory devices
- Resistive random-access memory (RRAM) devices
Problems Solved by this Technology
This technology helps in:
- Improving memory device performance
- Enhancing data storage capabilities
Benefits of this Technology
The benefits of this technology include:
- Higher memory density
- Faster data access speeds
Potential Commercial Applications of this Technology
The potential commercial applications of this technology could be in:
- Consumer electronics
- Data storage devices
Possible Prior Art
One possible prior art in this field is the use of similar materials in memory devices, but with different compositions.
What are the specific compositions of the lanio material used in the switching devices?
The specific compositions of the lanio material used in the switching devices are x values between 0.13 and 0.30, and y values between 0.9 and 1.5.
How does the variable resistance material pattern in the memory cells contribute to the overall performance of the memory device?
The variable resistance material pattern in the memory cells helps in storing and retrieving data efficiently by changing its resistance based on the applied voltage, thus enabling data storage and retrieval in the memory device.
Original Abstract Submitted
a memory device includes a substrate; a plurality of first conductive lines on the substrate and extending in a first direction; a plurality of second conductive lines on the plurality of first conductive lines and extending in a second direction crossing the first direction; and a plurality of first memory cells respectively arranged between the plurality of first conductive lines and the plurality of second conductive lines, wherein each first memory cell of the plurality of first memory cells includes a switching device and a variable resistance material pattern, and the switching device includes a material having a composition of lanio, in which 0.13≤x≤0.30 and 0.9≤y≤1.5.
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