Samsung electronics co., ltd. (20240188285). SEMICONDUCTOR DEVICE simplified abstract
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240188285 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes various structures such as spacers and metal oxides to improve its performance and functionality. Here are some key points to explain the patent/innovation:
- The device features a gate structure, bit line structure, and multiple spacers made of different materials.
- The first spacer contains an oxide of a second metal with a lower ionization energy than the first metal in the bit line structure.
- The second spacer includes an oxide of a third metal, while the third spacer consists of a nitride material.
- Additional spacers, such as the fourth, fifth, and sixth spacers, are stacked in a horizontal direction on the outer sidewall of the previous spacers.
Potential Applications: - This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as memory storage or processing units.
Problems Solved: - The use of different spacers and materials helps enhance the performance and efficiency of the semiconductor device, potentially reducing leakage and improving overall functionality.
Benefits: - Improved device performance, reduced leakage, enhanced functionality, and potentially increased reliability and lifespan of the semiconductor device.
Potential Commercial Applications: - "Innovative Spacer Technology for Advanced Semiconductor Devices"
Possible Prior Art: - Prior art related to the use of spacers and different materials in semiconductor devices to improve performance and functionality.
Unanswered Questions:
- How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
Answer: A comparative analysis of this technology with existing semiconductor device structures could provide insights into its advantages and potential areas for improvement.
- What are the specific manufacturing processes involved in creating the various spacers and structures described in the patent application?
Answer: Detailed information on the manufacturing processes for the spacers and materials used in the semiconductor device could help understand the feasibility and scalability of implementing this technology in mass production.
Original Abstract Submitted
the semiconductor device includes an active pattern; a gate structure in an upper portion of the active pattern; a bit line structure on the active pattern, the bit line structure including a first metal; a first spacer on a sidewall of the bit line structure, the first spacer including an oxide of a second metal that has an ionization energy smaller than that of the first metal; a second spacer on an outer sidewall of the first spacer, the second spacer including an oxide of a third metal; a third spacer on a lower portion of an outer sidewall of the second spacer, the third spacer including a nitride; a fourth spacer on an upper portion of the outer sidewall of the second spacer and the third spacer; a fifth spacer and a sixth spacer sequentially stacked in a horizontal direction from an outer sidewall of the fourth spacer.
