Samsung electronics co., ltd. (20240164220). MAGNETORESISTIVE RANDOM ACCESS DEVICE simplified abstract
MAGNETORESISTIVE RANDOM ACCESS DEVICE
Organization Name
Inventor(s)
Hyungjong Jeong of Suwon-si (KR)
Byoungjae Bae of Suwon-si (KR)
MAGNETORESISTIVE RANDOM ACCESS DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240164220 titled 'MAGNETORESISTIVE RANDOM ACCESS DEVICE
Simplified Explanation
The magnetoresistive random access memory device described in the abstract includes a substrate, conductive patterns, an insulating interlayer, a lower electrode contact, a lower electrode, and a memory structure with a stacked MTJ structure and upper electrode. The lower electrode has a rounded sidewall, and the width of the lower electrode increases from the lower portion to the upper portion. The memory structure has a sidewall slope where the width increases from the upper portion to the lower portion, and at least a portion of the lower electrode's sidewall is covered by the insulating interlayer.
- Substrate with conductive patterns
- Insulating interlayer covering the conductive patterns
- Lower electrode contact passing through the interlayer
- Lower electrode with rounded sidewall
- Memory structure with stacked MTJ structure and upper electrode
- Width of lower electrode increases from lower to upper portion
- Memory structure width increases from upper to lower portion
- Lower electrode sidewall covered by insulating interlayer
Potential Applications
The technology could be used in various electronic devices requiring non-volatile memory, such as smartphones, tablets, and computers.
Problems Solved
This technology solves the problem of data loss in electronic devices by providing a reliable and fast non-volatile memory solution.
Benefits
The benefits of this technology include faster data access, lower power consumption, and increased data retention compared to traditional memory devices.
Potential Commercial Applications
The technology could be commercialized for use in consumer electronics, data storage devices, and industrial applications under the title "Cutting-Edge Non-Volatile Memory Technology".
Possible Prior Art
One possible prior art could be the development of similar magnetoresistive random access memory devices with different electrode structures or memory configurations.
Unanswered Questions
How does this technology compare to other types of non-volatile memory solutions on the market?
This article does not provide a direct comparison with other non-volatile memory solutions, such as NAND flash or NOR flash memory.
What are the potential challenges in scaling up the production of this technology for mass adoption?
The article does not address the potential challenges in scaling up production for mass adoption, such as cost, manufacturing processes, or compatibility with existing systems.
Original Abstract Submitted
a magnetoresistive random access memory device includes a substrate; conductive patterns on the substrate; an insulating interlayer covering the conductive patterns; a lower electrode contact passing through the insulating interlayer, the lower electrode contact contacting the conductive pattern; a lower electrode on the lower electrode contact, the lower electrode including a rounded sidewall; and a memory structure on the lower electrode, the memory structure including a stacked mtj structure and upper electrode, wherein a width of the lower electrode increases from a lower portion to an upper portion, the memory structure has a sidewall slope such that a width of the memory structure increases from an upper portion to a lower portion, and at least a portion of a sidewall of the lower electrode is covered by the first insulating interlayer.