Samsung electronics co., ltd. (20240120393). SEMICONDUCTOR DEVICE simplified abstract
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Myung Il Kang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120393 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes various components such as a substrate, sheet patterns, gate electrode, source/drain patterns, contact blocking pattern, and source/drain contacts. Here are some key points to explain the patent/innovation:
- The semiconductor device has a unique structure with specific depths and connections between the different components.
- The gate electrode surrounds the first sheet pattern and is positioned above the source/drain patterns.
- The first and second source/drain patterns are connected to the first sheet pattern at opposite ends.
- A contact blocking pattern is located below the second source/drain pattern.
- Source/drain contacts extend in a first direction and are connected to the respective source/drain patterns.
- The depth from the gate electrode to the lowermost portion of the first source/drain contact is greater than the depth to the upper surface of the contact blocking pattern.
Potential Applications
The technology described in this patent application could be applied in the semiconductor industry for the development of advanced electronic devices with improved performance and efficiency.
Problems Solved
This technology addresses the need for precise and efficient connections between different components in semiconductor devices, ensuring optimal functionality and reliability.
Benefits
The benefits of this technology include enhanced device performance, increased reliability, and potentially reduced power consumption in electronic devices.
Potential Commercial Applications
The technology could be utilized in the production of various electronic devices such as smartphones, tablets, computers, and other consumer electronics, as well as in industrial applications for advanced control systems.
Possible Prior Art
One possible prior art could be the development of similar semiconductor devices with different configurations and connection methods, but with the same goal of improving device performance and efficiency.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
The article does not provide a direct comparison with existing semiconductor device structures, so it is unclear how this technology stacks up against current industry standards.
What are the potential challenges or limitations of implementing this technology in practical applications?
The article does not address any potential challenges or limitations that may arise when implementing this technology in real-world applications, leaving room for further exploration and analysis in this area.
Original Abstract Submitted
a semiconductor device includes a substrate, a first sheet pattern on the substrate, a gate electrode on the substrate and surrounding the first sheet pattern, a first source/drain pattern and a second source/drain pattern respectively connected to a first end and a second end of the first sheet pattern, a contact blocking pattern on a lower side of the second source/drain pattern, a first source/drain contact extending in a first direction and connected to the first source/drain pattern, and a second source/drain contact connected to the second source/drain pattern and extending in the first direction to contact an upper surface of the contact blocking pattern. a depth from an upper surface of the gate electrode to a lowermost portion of the first source/drain contact may be greater than a depth from the upper surface of the gate electrode to the upper surface of the contact blocking pattern.