Samsung electronics co., ltd. (20240119973). MEMORY DEVICES PERFORMING OFFSET COMPENSATING OPERATION simplified abstract
MEMORY DEVICES PERFORMING OFFSET COMPENSATING OPERATION
Organization Name
Inventor(s)
Kyeongtae Nam of Suwon-si (KR)
MEMORY DEVICES PERFORMING OFFSET COMPENSATING OPERATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240119973 titled 'MEMORY DEVICES PERFORMING OFFSET COMPENSATING OPERATION
Simplified Explanation
The memory device described in the abstract includes a memory cell array with multiple memory blocks, a sense amplifier that performs an offset compensating operation in response to an offset compensation signal, and an offset time adjustment circuit that adjusts the execution time of the offset compensating operation based on a comparison result between a voltage at an equalization voltage node and a reference offset voltage.
- Memory device with memory cell array and sense amplifier
- Sense amplifier performs offset compensating operation
- Offset time adjustment circuit adjusts execution time based on comparison result
Potential Applications
The technology described in this patent application could be applied in:
- Solid-state drives
- Embedded systems
- Mobile devices
Problems Solved
This technology helps address the following issues:
- Improving memory read accuracy
- Enhancing memory performance
- Minimizing data corruption risks
Benefits
The benefits of this technology include:
- Increased data reliability
- Enhanced memory operation efficiency
- Reduced error rates
Potential Commercial Applications
The potential commercial applications of this technology could include:
- Data storage devices
- Consumer electronics
- Automotive systems
Possible Prior Art
One possible prior art related to this technology is the use of sense amplifiers in memory devices to improve read/write operations.
Unanswered Questions
How does the offset compensating operation impact overall memory performance?
The offset compensating operation helps improve memory read accuracy by adjusting the execution time based on comparison results between voltages. This adjustment ensures that data is read correctly, reducing the risk of errors and enhancing memory performance.
What are the specific parameters used in the comparison between the equalization voltage node and the reference offset voltage?
The specific parameters used in the comparison between the equalization voltage node and the reference offset voltage are not explicitly mentioned in the abstract. However, it can be inferred that these parameters are crucial in determining the adjustment of the execution time for the offset compensating operation.
Original Abstract Submitted
disclosed is a memory device that includes a memory cell array having a plurality of memory blocks, a sense amplifier connected to the plurality of memory blocks and configured to perform an offset compensating operation in response to an offset compensation signal, and an offset time adjustment circuit connected to the sense amplifier and configured to adjust an execution time of the offset compensating operation based on a comparison result of a voltage at an equalization voltage node and a reference offset voltage.