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Samsung electronics co., ltd. (20240114262). IMAGE SENSOR simplified abstract

From WikiPatents

IMAGE SENSOR

Organization Name

samsung electronics co., ltd.

Inventor(s)

Jueun Park of Suwon-si (KR)

Sanghyuck Moon of Suwon-si (KR)

Seyoung Kim of Suwon-si (KR)

Jaeho Lee of Suwon-si (KR)

IMAGE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240114262 titled 'IMAGE SENSOR

Simplified Explanation

The patent application describes an image sensor with a pixel array containing multiple pixels, each with two photodiodes, transfer gates, and active regions, along with a logic circuit. Each pixel group consists of a first and second pixel, with corresponding active regions adjacent to transfer gates. Source-follower transistors in each pixel group are connected to the active regions of both pixels in the group.

  • Pixel array with multiple pixels, each containing two photodiodes, transfer gates, and active regions
  • Logic circuit for processing data from the pixel array
  • Pixel groups consisting of first and second pixels with corresponding active regions
  • Source-follower transistors connected to active regions of both pixels in each group

Potential Applications

The technology described in the patent application could be used in various applications such as digital cameras, smartphones, surveillance systems, and medical imaging devices.

Problems Solved

This technology addresses the need for improved image sensor performance, including higher resolution, better low-light sensitivity, and reduced noise in captured images.

Benefits

The benefits of this technology include enhanced image quality, improved signal processing capabilities, and potentially lower power consumption compared to traditional image sensor designs.

Potential Commercial Applications

The technology could be commercialized for use in consumer electronics, security systems, medical devices, and industrial imaging equipment.

Possible Prior Art

One possible prior art in this field is the use of dual photodiode structures in image sensors to improve dynamic range and signal-to-noise ratio.

Unanswered Questions

How does this technology compare to existing image sensor designs in terms of performance and cost?

The article does not provide a direct comparison with existing image sensor designs, so it is unclear how this technology stacks up in terms of performance and cost.

What are the potential limitations or drawbacks of implementing this technology in practical applications?

The article does not address any potential limitations or drawbacks of implementing this technology, leaving uncertainty about any challenges that may arise during real-world use.


Original Abstract Submitted

an image sensor includes: a pixel array including a plurality of pixels, wherein each of the pixels includes first and second photodiodes, first and second transfer gates, and a plurality of active regions; and a logic circuit. each of a plurality of pixel groups in the pixel array includes a first pixel and a second pixel. the active regions in each of the first pixel and the second pixel include a first active region and a second active region. the first active region is adjacent to the first transfer gate. the second active region is adjacent to the second transfer gate. in each of the pixel groups, a plurality of source-follower transistors respectively has a gate connected to the first and second active regions of the first pixel and connected to the first and second active regions of the second pixel. the source-follower transistors are in the first pixel.

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