Samsung electronics co., ltd. (20240096995). SEMICONDUCTOR DEVICES simplified abstract
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
Myunggil Kang of Suwon-si (KR)
Younggwon Kim of Suwon-si (KR)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096995 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the abstract includes an active region, multiple channel layers, a gate structure surrounding the channel layers, and source/drain regions on at least one side of the gate structure. The gate structure has an upper portion on the top channel layer and lower portions between each channel layer.
- The semiconductor device has an active region extending in a first direction.
- It includes multiple channel layers that are spaced apart from each other.
- A gate structure surrounds the channel layers.
- Source/drain regions are located on at least one side of the gate structure and contact the channel layers.
- The gate structure has an upper portion on the top channel layer and lower portions between each channel layer.
Potential Applications
This technology could be applied in:
- Advanced semiconductor devices
- High-performance electronics
- Integrated circuits
Problems Solved
This technology helps to:
- Improve the performance of semiconductor devices
- Enhance the efficiency of electronic components
- Increase the speed of data processing
Benefits
The benefits of this technology include:
- Higher functionality in electronic devices
- Improved energy efficiency
- Faster data processing speeds
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Telecommunications
- Automotive industry
Possible Prior Art
One possible prior art for this technology could be:
- Previous semiconductor devices with similar structures and functionalities
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance?
This question is not directly addressed in the article. However, further research and comparative studies could provide insights into the performance differences between this technology and existing semiconductor devices.
What are the potential challenges in implementing this technology on a large scale for commercial production?
The article does not discuss the challenges of large-scale implementation. Factors such as manufacturing costs, scalability, and production efficiency could be potential challenges that need to be considered.
Original Abstract Submitted
a semiconductor device, may include an active region extending in a first direction; a plurality of channel layers on the active region to be spaced apart from each other; a gate structure, surrounding the plurality of channel layers, respectively; and source/drain regions on the active region on at least one side of the gate structure, and contacting the plurality of channel layers, wherein the gate structure may include an upper portion on an uppermost channel layer among the plurality of channel layers and lower portions between each of the plurality of channel layers in a region vertically overlapping the plurality of channel layers, wherein a width of each of the plurality of channel layers in the first direction may be less than a width of lower portions of the gate structure, adjacent to the respective channel layers among the lower portions of the gate structure in the first direction.
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