Samsung display co., ltd. (20240268151). DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Inventor(s)
Jong Jun Baek of Yongin-si (KR)
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240268151 titled 'DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
The abstract describes a display device with specific semiconductor layers and doping concentrations in transistors.
- The display device includes a light-emitting device and three transistors for driving the device.
- The first transistor outputs a driving current to the light-emitting device.
- The second transistor transmits a data voltage to the first transistor.
- The third transistor is connected to the second electrode and gate electrode of the first transistor.
- The first semiconductor layer of the first transistor contains fluorine ions.
- The third semiconductor layer of the third transistor has a third lower doping layer and a third upper doping layer with different concentrations of phosphorus and boron ions.
Potential Applications: - This technology can be used in various display devices such as TVs, smartphones, and monitors. - It can also be applied in lighting systems and signage.
Problems Solved: - Enhances the efficiency and performance of display devices. - Improves the overall quality of the displayed images.
Benefits: - Higher brightness and contrast in display screens. - Energy-efficient operation leading to longer battery life in portable devices.
Commercial Applications: Title: Advanced Display Technology for Enhanced Visual Experience This technology can revolutionize the display industry by offering brighter and more energy-efficient screens for consumer electronics, leading to improved user experience and longer device usage.
Questions about the technology: 1. How does the presence of fluorine ions in the first semiconductor layer impact the performance of the display device?
- The fluorine ions help improve the stability and efficiency of the transistor, leading to better overall performance.
2. What are the specific advantages of having different doping concentrations in the third semiconductor layer of the third transistor?
- The varying concentrations of phosphorus and boron ions allow for precise control of the transistor's conductivity, enhancing its functionality.
Original Abstract Submitted
a display device includes a light-emitting device; a first transistor that outputs a driving current applied to the light-emitting device; a second transistor that transmits a data voltage to a first electrode of the first transistor; and a third transistor electrically connected to a second electrode and a gate electrode of the first transistor, a first semiconductor layer of the first transistor includes fluorine ions, a third semiconductor layer of the third transistor includes a third lower doping layer and a third upper doping layer sequentially disposed, a concentration of phosphorus ions of the third lower doping layer is greater than a concentration of phosphorus ions of the third upper doping layer, and a concentration of boron ions of the third upper doping layer is greater than a concentration of boron ions of the third lower doping layer.
