Samsung Electronics Co., Ltd. patent applications on 2025-06-19
Patent Applications by Samsung Electronics Co., Ltd. on June 19th, 2025
Samsung Electronics Co., Ltd.: 234 patent applications
Samsung Electronics Co., Ltd. has applied for patents in the areas of H05K5/0226 (PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS, 3), H01L23/13 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application), 2), H04W74/006 ({in the downlink, i.e. towards the terminal}, 2), H01L25/18 (the devices being of types provided for in two or more different subgroups of the same main group of groups - , or in a single subclass of ,, 2), H10B43/40 (ELECTRONIC MEMORY DEVICES, 2), H10B12/50 (ELECTRONIC MEMORY DEVICES, 2), H04N23/632 (by using electronic viewfinders, 2), H10B12/482 (ELECTRONIC MEMORY DEVICES, 2), H04W52/36 (WIRELESS COMMUNICATION NETWORKS (broadcast communication ; communication systems using wireless links for non-selective communication, e.g. wireless extensions ), 2), H10D30/6729 (No explanation available, 2)
With keywords such as: device, includes, including, electronic, provided, housing, member, wearable, coupling, link in patent application abstracts.
Top Inventors:
- Jinwook KIM of Suwon-si KR (1 patents)
- Jubong Lee of Suwon-si KR (1 patents)
- Hyuntae Lee of Suwon-si KR (1 patents)
- Ahra Jeon of Suwon-si KR (1 patents)
- Sungyong Park of Suwon-si KR (1 patents)
Collaborating organizations:
- Seoul National University R&DB Foundation (3 patents)
- La Corporation de l'École des Hautes Études Commerciales de Montréal (1 patents)
- International Business Machines Corporation (2 patents)
- MS ELECTRONICS CO., LTD. (1 patents)
- President and Fellows of Harvard College (1 patents)
Patent Applications by Samsung Electronics Co., Ltd.
Abstract: a wearable electronic device is provided. the wearable electronic device includes a housing including a link bar, a coupling member connected to the housing, a first magnet connected to the link bar, a second magnet connected to the coupling member and attached to the first magnet, and a magnet case connected to the coupling member, surrounding at least a portion of the second magnet, and including a protrusion configured to contact the link bar.
20250194788. APPARATUS CLEANING BRUSHES (Samsung Electronics ., .)
Abstract: an apparatus for cleaning brushes may include a scrubbing jig and at least two scrubbing surfaces. the scrubbing jig may be configured to scrub at least two brushes used in cleaning a wafer. the at least two scrubbing surfaces may be provided to the scrubbing jig to make contact with the at least two brushes. accordingly, a contamination of a wafer by contaminants in the brushes may be suppressed in a following cleaning process.
20250194835. THERMOELECTRIC FOOD PREPARATION ZONE CONTROL (Samsung Electronics ., .)
Abstract: an apparatus includes first and second platforms, a stem, and a fluid transfer path. the first platform includes a first serving surface and one or more first thermoelectric modules with one or more supply sides facing the first serving surface. the second platform includes a second serving surface and one or more second thermoelectric modules with one or more supply sides facing the second serving surface. the stem extends from the first serving surface of the first platform to a bottom surface of the second platform. the fluid transfer path is configured to guide a fluid and includes a first flow path inside the first platform, a second flow path inside the second platform, and third and fourth flow paths inside the stem and extending between the first flow path and the second flow path.
20250194880. CLEANING ROBOT OVERHEATING DETECTION METHOD CLEANING ROBOT (Samsung Electronics ., .)
Abstract: an overheating detection method of a cleaning robot includes, when contact between a first charging terminal of the cleaning robot and a second charging terminal of a station is detected through a first voltage detection circuit, transmitting a charge command to the station, obtaining a heating value between the first charging terminal and the second charging terminal when a voltage is supplied from the station to the cleaning robot according to the charge command, and performing a re-docking operation after the cleaning robot moves away from the station by a predetermined distance when the obtained heating value exceeds a threshold heating value that is a criterion for overheating.
20250194884. MOVABLE ROBOT CONTROLLING METHOD THEREOF (Samsung Electronics ., .)
Abstract: a movable robot including a driver; and at least one processor configured to, when a preset event is identified during cleaning traveling of the movable robot, identify a target location stored in a memory for separating a cleaning pad from the movable robot, control the driver to move the movable robot to the identified target location based on spatial information stored in the memory, and control the movable robot to separate the cleaning pad from the movable robot at the identified target location, wherein the identified target location is determined based on at least one of the spatial information or user input.
20250194894. DISHWASHER CONTROL METHOD THEREOF (Samsung Electronics ., .)
Abstract: a dishwasher and a controlling method thereof are provided. the dishwasher according to an embodiment includes a display, a user interface, memory storing at least one instruction, and one or more processors configured to execute the at least one instruction, and the one or more processors are configured to, based on the dishwasher being turned on, control the display to display a first gui corresponding to at least one dishwashing course, based on a user input for selecting a dishwashing course being received through the user interface, control the display to display a second gui including an animation effect that indicates dish loading information corresponding to the selected dishwashing course, based on a dishwashing operation being started based on the selected dishwashing course, control the display to display a third gui indicating the dishwashing course and dishwashing time.
Abstract: according to an embodiment, a method performed by a wearable device includes: identifying that an exercise of a user based on designated motions is started; obtaining second information on the designated motions; obtaining second information on exercise movement of the user, in accordance with performance of the designated motions; obtaining, based on a first threshold value related to the first information, a first value indicating a number of times the designated motions with respect to the second information were performed; obtaining, based on a second threshold value related to the first information, a second value indicating the number of times the designated motions with respect to the second information were performed; and displaying the first value and the second value on the display.
20250194980. PROBE METHOD SENSING CELLULAR SIGNALS (Samsung Electronics ., .)
Abstract: a probe apparatus for sensing a cellular signal includes a base layer, an extracellular electrode disposed on the base layer, a first middle layer that is disposed on the base layer and configured to cover the extracellular electrode, an intracellular electrode that is disposed on the first middle layer, a second middle layer that is disposed on the first middle layer and configured to cover the intracellular electrode, a cover layer disposed on the second middle layer, and a fluid-flow channel provided between the second middle layer and the cover layer.
Abstract: a nozzle module according to an embodiment may include a module body extending in a first direction and configured to be spaced apart from a roller brush by a particular distance, wherein the roller brush is configured to clean a substrate, a spray nozzle configured to spray a chemical on the roller brush, and an adjustable nozzle mount that is coupled to the module body and selectively fixes the spray nozzle in a selectable orientation, wherein the adjustable nozzle mount controls an orientation of the spray nozzle to adjust a spraying angle of the spray nozzle.
Abstract: in one embodiment, a method of manufacturing a foam material includes generating a two-dimensional surface enclosed by one or more boundaries and populating the two-dimensional surface with a number of points. the method further includes generating, for each of the number of points, a corresponding cell region on the two-dimensional surface, where each cell region has a cell surface area bounded by a cell wall, and where each cell wall has the same thickness. the method further includes generating, for each of the one or more surface boundaries, a boundary wall having a particular boundary-wall thickness; applying the two-dimensional surface to a foam material; and creating, in the foam material, cells in accordance with the cell regions within the two-dimensional surface.
Abstract: an assembly-type structure for fixing a motor of a wearable device may include: an upper frame and a lower frame that support a proximal part of a user and face each other in parallel; an upper holder that is connected to the upper frame; a lower holder that is connected to the lower frame; a main holder that is provided between the upper frame and the lower frame and supported by the upper holder and the lower holder; and a motor that is connected to the main holder.
20250197255. WATER TREATMENT APPARATUS (Samsung Electronics ., .)
Abstract: a water treatment apparatus includes a housing, a stack configured to separate ions contained in fluid flowing into the housing and including a first electrode and a second electrode disposed to face the first electrode and configured to form an electric field with the first electrode, and a pressure plate provided to partition an internal space of the housing into a first internal space in which the stack is disposed and a second internal space where the pressure plate is configured to press the stack in a first direction corresponding to a stacking direction of the first electrode and the second electrode and move between a first position in which the pressure plate moves in the first direction to press the stack and a second position spaced apart from the first position to a second direction opposite to the first direction.
20250197603. REFRIGERATOR (Samsung Electronics ., .)
Abstract: a refrigerator may include a main body including: an inner cabinet that forms a storage room, an outer cabinet outside of the inner cabinet, and an insulation material between the inner cabinet and the outer cabinet; and a door configured to open and close the storage room, wherein the insulation material includes a rigid polyurethane foam that includes: fine particles that each include a surface layer including a hydrophobic group and a hydrophilic group, and a urethane resin containing a constituent unit derived from polyol and a constituent unit derived from isocyanate.
Abstract: a rinse material composition used in a process of forming a pattern using lithography includes a dry development rinse material (ddrm) compound and a solvent. the ddrm compound is designed to form hydrogen bonds, van der waals bonds, coordination bonds, or ionic bonds with photosensitive crosslinkable molecules of a resist pattern. the resist pattern contains an organometallic material. the ddrm compound is dissolved in the solvent.
Abstract: an electrocatalyst including: a first nanostructure including copper hydroxide; and a second nanostructure including a metal of groups 2, 4, or 11 to 14 of the periodic table of elements, other than copper, a metal oxide of the metal, a metal hydroxide of the metal, or a combination thereof, wherein the electrocatalyst is effective to catalyze conversion of carbon dioxide into a multicarbon compound.
Abstract: a washing machine is provided. the washing machine includes a drum, a motor configured to provide rotation power to the drum, a balancer positioned on at least one of the front of the drum or the rear of the drum, including a plurality of mass bodies, a vibration sensor configured to detect vibration of the drum, memory storing one or more computer programs, and one or more processors communicatively coupled to the motor, the vibration sensor, and the memory. the one or more computer programs include computer-executable instructions that, when executed by the one or more processors individually or collectively, cause the washer to perform an initial step of a dehydration cycle by driving the motor, control the motor to be driven for a predetermined time at a first speed higher than that of the resonance period of the drum and obtain an eccentricity value of the drum using the vibration sensor, and based on the obtained eccentricity value, perform one of i) a first operation of re-performing the initial step of the dehydration cycle after stopping the motor, ii) a second operation of performing a high-speed dehydration cycle by increasing a speed of the motor from the first speed, or iii) a third operation of performing rebalancing by decreasing the speed of the motor to a second speed lower than the first speed.
20250198071. DRUM-TYPE WASHING MACHINE (Samsung Electronics ., .)
Abstract: a washing machine including a housing; a tub in the housing; a rotatable drum in the tub; and a plurality of leg portions couplable to the housing to support the housing on a mounting surface, wherein each leg portion includes a support leg, a reinforcement bracket couplable to a lower surface of the housing, and a weight measurement device couplable to the reinforcement bracket, wherein each leg portion is configured so that, when the weight measurement device is coupled to the reinforcement bracket and the reinforcement bracket is coupled to the lower surface of the housing, the housing is supported so that a lower surface of the housing is spaced apart from the mounting surface, and the weight measurement device is supported on the support leg and located between the lower surface of the housing and the reinforcement bracket, and measures a weight applied on the leg portion.
20250198077. DEVICE METHOD RADIO FREQUENCY DRYING (Samsung Electronics ., .)
Abstract: a radio frequency (rf) drying device is provided. the rf drying device includes a drying chamber including a grounded body enclosing a plurality of n (n≥3) electrodes for generating radio frequency field, and a drum electrically insulated from the plurality of electrodes, and a processor configured to select and activate m (<n) electrodes among the plurality of n electrodes and deactivate one or more remaining (n−m) electrodes periodically and to to select m(<n) electrodes for being activated to generate ac signals and deactivate n−m electrodes for being inactivated not to generate ac signals in an active mode, and rf field is formed inside the drying chamber based on the generated ac signals.
20250198627. COOKING APPARATUS (Samsung Electronics ., .)
Abstract: a cooking apparatus includes a main body including an inner casing, a cooking chamber formed inside the inner casing, and an electrical chamber formed outside the inner casing, a heating device configured to heat the cooking chamber, a base plate arranged on an upper side of the inner casing to form an insulating layer between the electrical chamber and the inner casing, and a lighting device arranged in the electrical chamber and configured to illuminate an interior of the cooking chamber. the lighting device includes a light-emitting diode (led) arranged on an upper side of the insulating layer, a light guide plate configured to guide light emitted from the led from above the insulating layer to below the insulating layer, and a transparent member configured to cover an opening formed on an upper surface of the cooking chamber and to transmit light emitted through the light guide plate.
20250198628. COOKING APPARATUS (Samsung Electronics ., .)
Abstract: a cooking apparatus includes a main body including a cooking chamber and an electrical chamber partitioned from the cooking chamber, a door configured to open or close the cooking chamber, the door including a hook insertion portion and a plurality of air holes through which air passing through an interior of the door is discharged, and a door opening device arranged in the electrical chamber and configured to open the door, the door opening device including a hook member inserted into the hook insertion portion to lock the door to the main body and withdrawn from the hook insertion portion to unlock the door from the main body, and a drive motor configured to apply a driving force to allow the hook member to be withdrawn from the hook insertion portion.
20250198638. DEHUMIDIFIER MANAGEMENT METHOD COMPUTING DEVICE (Samsung Electronics ., .)
Abstract: a dehumidifier management method including receiving a notification condition related to a water level in a water tank of a dehumidifier from a user; obtaining water level information about the water level in the water tank; and providing the user with a notification corresponding to the notification condition, in response to the obtained water level information satisfying the received notification condition, wherein the received notification condition differs from a full water level notification condition where the water level in the water tank reaches a full water level.
20250198639. DEHUMIDIFIER METHOD CONTROLLING SAME (Samsung Electronics ., .)
Abstract: a dehumidifier including an environmental sensor configured to measure temperature and humidity of air and produce corresponding sensor data; a water tank configured to store water generated by a dehumidifying operation of the dehumidifier; a water level sensor configured to detect that a water level in the water tank reaches a predetermined water level; and at least one processor. the at least one processor is configured to calculate a cumulative amount of dehumidification based on sensor data collected from the environmental sensor and correction data, and, based on the water level sensor detecting that the water level in the water tank reaches the predetermined water level, update the correction data based on a difference between the cumulative amount of dehumidification and a predetermined amount of water corresponding to the predetermined water level.
20250198671. COMPRESSOR HOME APPLIANCE INCLUDING SAME (Samsung Electronics ., .)
Abstract: a compressor according to an embodiment of the disclosure may include a case storing an oil therein, a compression device disposed inside the case to compress a refrigerant introduced into the case, a driving device disposed inside the case to drive the compression device, and an oil trap portion for separating the refrigerant and the oil or collecting the separated oil when the compression device is operated. the oil trap portion may protrude from an outer surface of the case and be recessed from an inner surface of the case to form a space for accommodating the oil. the oil trap portion may have at least a portion positioned in a cavity area of the case in which the compression device and the driving device are not disposed.
20250198684. REFRIGERATOR (Samsung Electronics ., .)
Abstract: a refrigerator includes a main body, a first storage chamber and a second storage chamber provided inside the main body with front sides thereof open. an evaporator is arranged inside the main body and is configured to generate cold air and arranged behind the first storage chamber. a first duct is configured to supply the cold air generated from the evaporator to the first storage chamber and a second duct is configured to supply cold air to the second storage chamber. a connection duct is configured to connect the first duct and the second duct to cause the cold air inside the first duct to flow into the second duct, and a damper is configured to selectively open and close the connection duct. the damper is provided inside the first duct, and the second duct has a flat front surface.
20250198685. REFRIGERATOR METHOD CONTROLLING SAME (Samsung Electronics ., .)
Abstract: a refrigerator may include: a storage compartment; a cold air duct; a fan disposed in the cold air duct; a sterilizing lamp configured to sterilize air supplied to the storage compartment through the cold air duct; a contamination sensor for detecting a contamination level in the storage compartment; a first temperature sensor for detecting a first temperature of the sterilizing lamp; a second temperature sensor for detecting a second temperature of the storage compartment; and a controller, configured to: control the fan and the sterilizing lamp; determine a sterilization intensity based on the contamination level; determine a rotation speed of the fan and an input voltage of the sterilizing lamp corresponding to the rotation speed of the fan, based on the sterilization intensity; and adjust the input voltage of the sterilizing lamp based on the first temperature of the sterilizing lamp or the second temperature of the storage compartment.
20250198689. REFRIGERATOR (Samsung Electronics ., .)
Abstract: a refrigerator includes: a main body; a storage compartment comprising a front side that opens inside the main body; a drawer configured to be insertable and withdrawable within the storage compartment; and a guide rail configured to guide an insertion and withdrawal of the drawer and comprising a catch portion configured to limit an insertion range and a withdrawal range of the drawer; wherein the drawer comprises: a stopper provided on side walls of the drawer and configured to contact the catch portion to limit the insertion range and the withdrawal range of the drawer, and a rib elastically formed on at least one of the sides of the drawer and configured to contact a plurality of protrusions provided on the guide rail before the stopper contacts the catch portion.
20250198941. DEFECT INSPECTION SYSTEM DEFECT INSPECTION METHOD (Samsung Electronics ., .)
Abstract: a defect inspection system includes a stage configured to receive a measurement target thereon, wherein the measurement target includes a first layer and a second layer disposed under the first layer; and a defect inspection apparatus including: a light source unit configured to output first incident light and second incident light; a beam splitter configured to reflect the first incident light and the second incident light from the first light source to the measurement target, and transmit first reflected light and second reflected light therethrough, wherein the first reflected light corresponds to the first incident light reflected from the first layer and the second reflected light corresponds to the second incident light reflected from the second layer; an objective lens disposed between the beam splitter and the measurement target; and a detector configured to: detect the first reflected light and generate a first image of the first layer based on the detected first reflected light; and detect the second reflected light and generate a second image of the second layer based on the detected second reflected light, wherein the first incident light is included in a visible light band, and wherein the second incident light is included in an infrared light band.
20250198945. SEMICONDUCTOR INSPECTION APPARATUS (Samsung Electronics ., .)
Abstract: a semiconductor inspection apparatus includes a light source portion configured to output a first beam, an extreme-ultraviolet filter disposed in a path of the first beam output from the light source portion and configured to separate extreme-ultraviolet light from the first beam, and an inspection portion including a detector apparatus configured detect scattered light, wherein the inspection portion further includes an inspection portion optical system comprising a variable mirror module disposed in a path of the extreme-ultraviolet light.
20250198983. METHOD APPARATUS CELLULAR ELECTRICAL SIGNAL MEASURING (Samsung Electronics ., .)
Abstract: a device including a plurality of electrodes, a plurality of electric current generators, the plurality of electric current generators connected to each of the plurality of electrodes and configured to apply an electric current to a cell cultured on an electrode, a plurality of voltage sensors, the plurality of voltage sensors being electrically and respectively connected to each of the plurality of electrodes and configured to measure a potential of the cell cultured on the corresponding electrode, a processor, and a memory, the processor being configured to determine a required time for electroporation to occur in a target cell based on a potential of the target cell that occurs in response to an electric current being applied to the target cell cultured on a target electrode among the plurality of electrodes and update a magnitude of an updated electric current to be applied to the target cell based on the required time.
20250199144. SENSOR MODULE ELECTRONIC DEVICE COMPRISING SAME (Samsung Electronics ., .)
Abstract: an electronic device may include: a main body; a driving device configured to move the main body; and a sensor module including: at least one sensor; a support that supports the at least one sensor; a sensor module body fixing the sensor module to the main body; a hinge part that rotatably connects the support and the sensor module body, wherein the hinge part includes: a first hinge rotatably supporting the support on sides of the support with respect to a front direction of the main body; and a second hinge rotatably supporting the support on a rear side of the support with respect to the front direction of the main body; and a balance element that is disposed on a lower side of the support, and configured to maintain a balance of the support while the main body is moved by the driving device.
Abstract: provided is a semiconductor package including a redistribution layer, a plurality of through mold vias on the redistribution layer, a photonics integrated circuit on the redistribution layer, a first mold on the redistribution layer, on the through mold vias, and the photonics integrated circuit, a first semiconductor chip and a second semiconductor chip on the redistribution layer opposite to the through mold vias, a first glass protruding from the second surface of the redistribution layer and penetrating the redistribution layer, a second mold layer the redistribution layer, on the first semiconductor chip, on the second semiconductor chip, and on the first glass, and a second glass that is connected to fiber on the first glass.
20250199273. LENS ASSEMBLY ELECTRONIC DEVICE COMPRISING SAME (Samsung Electronics ., .)
Abstract: provided is a lens assembly including an image sensor, a first lens having a positive refractive power, a second lens having a negative refractive power, a third lens having a positive refractive power, a fourth lens having a negative refractive power, a fifth lens having a positive refractive power, a sixth lens having a positive refractive power, and a seventh lens having a negative refractive power, the lens assembly satisfying 1=<efl/fl=<2, 1.3=<fno=<1.7, and 0.59=<ttl/(imgh*2)=<0.68, where efl is an effective focal length of the lens assembly, fl is a focal length of the first lens, fno is an f number of the lens assembly, ttl is a distance from the first lens' object-side surface to the image sensor, and imgh is a maximum distance from the optical axis to an edge of an imaging plane of the image sensor.
Abstract: a display apparatus including: a display panel; an outer case coupled to an outer side of the inner case; a printed circuit board defining an upper surface, a lower surface, and a through-hole; a plurality of light sources configured to emit light to the display panel; and a connector inserted in the through-hole. the connector includes: a connector body inserted in the through-hole and defining a first side surface and a second side surface; and a plurality of connector terminals on the upper surface and configured to electrically connect the connector body to a portion of the printed circuit board. a first surface portion of the upper surface is adjacent to the first side surface, a second surface portion of the upper surface is adjacent to the second side surface, and the plurality of connector terminals are configured to electrically connect the first surface portion to the second surface portion.
Abstract: a photoresist composition includes an organometallic complex having a metal element and ligands bonded to the metal element, and a solvent, wherein the ligands includes at least one n,o-�-heteroarylalkenolate ligand having an oxygen atom and a nitrogen atom, which are each directly bonded to the metal element, and at least one monodentate ligand bonded to the metal element. a method of manufacturing an integrated circuit device includes exposing an unshared electron pair of the metal element by exposing, to light, a first area of a photoresist film obtained from the photoresist composition and dissociating the at least one monodentate ligand from the organometallic complex, and forming an organometallic structure network in the first area by inducing crystal growth of bonded structures between the metal element having the unshared electron pair and the at least one n,o-�-heteroarylalkenolate ligand.
Abstract: an electronic device includes: a display; memory storing at least one instruction; and at least one processor configured to execute the at least one instruction to cause the electronic device to: obtain an input image, obtain information about a guide area of the display, the guide area including a plurality of sub-guide areas having a plurality of different weights with respect to implementation of a holographic image, the holographic image being implemented via the hologram guide by reflecting a base image that is based on the input image, determine a display area in the guide area, in which the base image can be displayed to have a weight greater than a preset threshold, based on the input image and the information about the guide area, convert the input image into the base image based on the display area, and display the base image in the display area.
20250199544. ROBOT USING ELEVATOR CONTROLLING METHOD THEREOF (Samsung Electronics ., .)
Abstract: a robot includes a sensor; a communication interface; one or more processors; and memory storing instructions, that when executed, cause the one or more processors to, based on a user input to move the robot on a first floor to a second floor, control the robot to board an elevator; based on the robot being aboard the elevator and the elevator being stopped at a floor, populate a database stored in the memory with information obtained through the sensor; based on the robot not being in communication with the elevator while the robot is aboard the elevator, identify whether the elevator has arrived at the second floor based on the information in the database and the information obtained through the sensor; and based on identifying that the elevator has arrived at the second floor, control the robot to exit the elevator.
20250199569. DISPLAY APPARATUS (Samsung Electronics ., .)
Abstract: a display apparatus includes: a display panel; a rear chassis covering a rear surface of the display panel; a support frame coupled to the rear chassis; a panel holder provided on the rear surface of the display panel to face the support frame, the panel holder being configured to be coupled to the support frame to attach the display panel to the rear chassis; and a wire configured to: couple the panel holder to the support frame based on the wire being coupled to the panel holder and the support frame, and release the coupling between the panel holder and the support frame based on the wire being separated from the panel holder and the support frame.
20250199572. FOLDABLE ELECTRONIC DEVICE INCLUDING SEGMENTED ANTENNA (Samsung Electronics ., .)
Abstract: an electronic device is provided. the electronic device includes a first housing including a sidewall that includes conductive portions spaced apart from each other and non-conductive portions disposed between the conductive portions, a second housing including a conductive sidewall having a length substantially equal to a length of the sidewall, a hinge structure rotatably connecting the first housing and the second housing, a ground portion disposed within the second housing, memory storing one or more computer programs, and one or more processors disposed within the first housing and being electrically connected to at least one of the conductive portions operating as a radiator of an antenna for communicating with an external electronic device, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors individually or collectively, cause the electronic device to electrically disconnect the conductive side wall from the grounding portion within the second housing when the electronic device is in a folded state in which a first surface of the first housing and a second surface of the second housing face different directions, and electrically connect the conductive side wall to the grounding portion within the second housing when the electronic device is in an unfolded state in which a direction faced by the first surface and a direction faced by the second surface are a same direction.
20250199582. ELECTRONIC DEVICE (Samsung Electronics ., .)
Abstract: various embodiments relate to an electronic device. the electronic device may include: a housing including a first surface facing a first direction and a second surface facing a second direction opposite the first direction; a first display viewable through the first surface; a battery disposed between the first display and the second surface; a second display having a size smaller than a size of the first display and viewable through a partial area of the second surface; a short-distance wireless communication antenna disposed at a lower end of the second display and configured to transmit/receive a short-distance wireless communication signal through the partial area of the second surface and the second display; and a shield disposed at a lower end of the short-distance wireless communication antenna and configured to block transmission/reception of the short-distance wireless communication signal through the first surface.
Abstract: an electronic apparatus includes memory storing instructions, and at least one processor connected to the memory and configured to control the electronic apparatus using a neural network model, where the instructions, when executed by the at least one processor, cause the electronic apparatus to identify whether to use the neural network model based on a state of the electronic apparatus, based on identifying that the neural network model is to be used, identify an operation mode of the electronic apparatus as one of a first mode having a first power consumption or a second mode having a second power consumption greater than the first power consumption, and adjust power consumption of the electronic apparatus based on the identified operation mode.
Abstract: a method of controlling an electronic device for enabling a context transfer from a virtual session to an environment external to the virtual session, includes detecting at least one user in an a virtual session; based on detecting the at least one user, obtaining a context of at least one virtual device content present in the virtual session, based on detecting the at least one user; obtaining at least one user interest related with the at least one virtual device content using at least one user input in the virtual session; obtaining correlation information between the at least one user interest and at least one content capability of a plurality of real world user devices of the at least one user; and providing at least one real world user device, among the plurality of user devices, to the at least one user for transferring the context of the at least one virtual device content based on the correlation information.
Abstract: a wearable device providing an immersive experience and a method of controlling the same are provided. the wearable device includes at least one sensor, at least one camera, memory storing one or more computer programs, and one or more processors communicatively coupled to the at least one sensor, at least one camera, and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors individually or collectively, cause the wearable device to identify a real object located around a user based on an image of a real world obtained through the at least one camera, identify a posture of the user wearing the wearable device based on sensing data obtained by the at least one sensor, based on the identified real object and the posture of the user, determine a first immersion level, based on the determined first immersion level, display an execution screen of at least one application as a virtual object, while the virtual object is displayed, determine a second immersion level based on interaction with the virtual object and the user, and based on the determined second immersion level, change a display scheme of the virtual object.
20250199640. SEMICONDUCTOR MODULE DISPLAY DEVICE (Samsung Electronics ., .)
Abstract: a semiconductor device includes: a display driver circuit configured to drive a display panel; a touch sensor controller configured to generate touch coordinates based on an input on a touch screen panel, the touch sensor controller includes: a first transmitter and receiver set on a first side of the display driver circuit; and a second transmitter and receiver set on a second side of the display driver circuit, the second side being opposite the first side. the semiconductor device further includes a plurality of routing lines connecting the touch sensor controller and the touch screen panel.
Abstract: a system for providing an element on a ue including foldable portions, is provided. the system includes: a processor configured to: identify an angular orientation between first and second foldable portions; detect the element of an application running on the first foldable portion; identify, based on the element being detected as running on the first foldable portion, whether the first foldable portion includes sensors; determine whether the element is displayed on the first foldable portion, based on identifying the first foldable portion does not have the sensors; fuse, based on determining the first foldable portion does not have the sensors, data from the sensors to data corresponding to the element of the application; and control display of the element based on the fused data to provide a correct format of the at least one element on the first foldable portion.
Abstract: an electronic device according to an embodiment may compare a first angle range and the angle of a flexible display bent by a folding shaft, identified based on data identified from one or more sensors, in response to an input to display of a list of applications. the electronic device may display a list comprising images corresponding to screens of applications on a first portion of the flexible display distinguished by the folding shaft, based on an angle included in the first angle range, and may display a first screen corresponding to a first application on a second portion of the flexible display. the electronic device may display a second screen corresponding to a second application on the second portion in response to another input to select an image corresponding to the second application, received inside a list of the first portion. the electronic device may display a third screen corresponding to the second application on all of the first and second portions based on an angle increased to a second angle range.
Abstract: an electronic device according to one embodiment can acquire data from a touch sensor while a screen based on first brightness is displayed in a display. the electronic device can identify, on the basis of at least one contact point identified by means of the data and related to a touch input performed on the display, whether the touch input corresponds to a designated gesture for adjusting the first brightness of the display. the electronic device can change, on the basis of the identification of the touch input corresponding to the designated gesture, to a second brightness that differs from the first brightness, the brightness of a first part on which at least one first visual object having a designated type is displayed from among a plurality of visual objects included in the screen.
Abstract: a method of operating a storage device is provided. the method includes updating metadata to a metadata buffer; writing journal data corresponding to the metadata into a journal buffer; determining a composition ratio between the journal data and the metadata, based on a number of valid journals involved in a replay of the metadata among the journal data; composing a meta write data in a meta write buffer, the meta write data including the metadata from the metadata buffer and the journal data from the journal buffer according to the determined composition ratio; and programming the meta write data composed in the meta write buffer into a non-volatile memory device.
20250199694. STORAGE CONTROLLER OPERATION METHOD THEREOF (Samsung Electronics ., .)
Abstract: a storage controller included in a storage device, the storage controller including an interrupt circuit that detects a sudden power off (spo) with respect to the storage device, and issues a spo notification and an emergency flush request; a central processing unit that receives the spo notification and issues a program request; and a volatile memory device including a plurality of memory areas. a first non-volatile memory (nvm) interfacing circuit of the storage device programs data stored in a first memory area from among the plurality of memory areas to an external first non-volatile memory device in response to receiving the program request, and programs data stored in a second memory from area among the plurality of memory areas to the first non-volatile memory device in response to receiving the emergency flush request.
Abstract: a nonvolatile memory device that includes a memory cell array including a plurality of nonvolatile memory cells; a page buffer circuit connected to the memory cell array; a status data memory circuit storing a first plurality of status data items; a control logic circuit controlling the status data memory circuit to accumulate the first plurality of status data items in the page buffer circuit, in response to a first status data group read command provided from an external device; and an input/output circuit outputting the first plurality of status data items accumulated in the page buffer circuit to the external device.
Abstract: an electronic device according to an embodiment may comprise a camera, a display, a memory configured to store instructions, and at least one processor. the at least one processor may be configured to, when the instructions are executed, cause the electronic device to receive a first input for enabling a designated setting. the at least one processor may be configured to, when the instructions are executed, cause the electronic device to, in response to the input, recognize, from a screen being displayed through the display, a first area occupied by a first external object and a second area occupied by a second external object, based on an image being obtained via the camera.
Abstract: the present disclosure relates to an electronic device for displaying a mirroring screen by interworking with an external electronic device, and an operation method of the electronic device. an external device may obtain mirroring data and use the obtained mirroring data to display a mirroring image on a first display area allocated in a display. the external device may obtain extension mirroring data from previous mirroring data having been used to display the mirroring image and, in response to a user's gesture, use the extension mirroring data to display an extension mirroring image on at least one extension display area allocated in the display in addition to the first display area.
Abstract: a portable electronic device includes: a wireless communication circuit; a display; at least one processor operatively connected to the wireless communication circuit and the display; and a memory connected to the at least one processor, where the memory is configured to store instructions that, when executed, cause the at least one processor to: connect to a first external electronic device through the wireless communication circuit; determine whether there is a viewer, other than a user of the portable electronic device, capable of watching a display of the first external electronic device in a vicinity of the portable electronic device through data communication with the first external electronic device or a second external electronic device using the wireless communication circuit; and blur image data corresponding to unspecified content that is not specified as a target for sharing with the viewer.
Abstract: an electronic device includes: communication circuitry that receives a data synchronization request with a target electronic device including an expandable display; a display; and a processor that determines screen settings according to the data synchronization request. the processor may compare a form factor of the electronic device with a form factor of the target electronic device, obtain a plurality of aspect ratios according to an aspect ratio of the electronic device and a display expansion of the target electronic device on the basis of the comparison result, determine whether the aspect ratio of the electronic device corresponds to aspect ratios of the target electronic device, and determine a screen setting to be applied to the target electronic device based on the aspect ratio that has been determined to correspond to the aspect ratio of the electronic device from among the aspect ratios of the target electronic device.
Abstract: an electronic device is described. the electronic device incudes memory comprising one or more storage mediums and storing instructions. the electronic device incudes at least one processor comprising processing circuitry. the electronic device incudes a display including display driving circuitry and a display panel. the instructions, when executed by the at least one processor individually or collectively, cause the electronic device to change, from a first frame interval to a second frame interval longer than the first frame interval, a frame interval indicating a shortest time interval between image transmissions from the at least one processor to the display driving circuitry, the image transmissions being to be executed for changing an image displayed on the display panel. the instructions, when executed by the at least one processor individually or collectively, cause the electronic device to control the display driving circuitry to perform display of a first image on the display panel by executing a first image transmission from the at least one processor to the display driving circuitry. the instructions, when executed by the at least one processor individually or collectively, cause the electronic device to control the display driving circuitry to complete, before a start timing of a second image transmission from the at least one processor to the display driving circuitry to be executed according to the second frame interval to perform display of a second image, one or more scans for repeated display of the first image performed on the display panel based on the change from the first frame interval to the second frame interval.
20250199768. HARDWARE EFFICIENT OUT-OF-ORDER SYNDROME CALCULATION (Samsung Electronics ., .)
Abstract: a hardware circuit for calculating syndromes in reed-solomon (rs) error correction codes comprises a plurality of p multiplexors, where p is a positive integer, where each multiplexor receives �{circumflex over ( )}i powers that are selected by j, wherein � is a primitive point of a rs generator polynomial and j is an index of an rs symbol, where i and j are positive integers, where 1≤i≤p, and outputs �{circumflex over ( )}(i�j); and a plurality of p first multipliers, where each first multiplier is associated with a multiplexor and receives �{circumflex over ( )}(i�j) from the associated multiplexor, multiplies the �{circumflex over ( )}(i�j) by a jth rs-word symbol rand outputs r��{circumflex over ( )}(i�j). the hardware circuit calculates and outputs p products of the form r��{circumflex over ( )}(i�j), wherein 1≤i≤p.
20250199857. ELECTRONIC DEVICE METHOD TENSOR MANAGEMENT PREFETCHING (Samsung Electronics ., .)
Abstract: a processor-implemented method includes allocating tensors to a memory to perform an initial iteration of training of a deep learning application, wherein the initial iteration is performed through execution of a plurality of kernels and, in response to each kernel being executed, tensors corresponding to the each kernel are used to execute the kernels, storing pattern information for allocating the tensors and the kernels to the memory in the initial iteration, and prefetching the tensors based on the pattern information to perform a next iteration of training of the deep learning application.
20250199909. MEMORY SYSTEM SUPPORTING MULTI-CHANNEL INTERFACE (Samsung Electronics ., .)
Abstract: a memory system includes a host and a memory device configured to transmit and receive data to and from the host through a plurality of channels. the host may include an error correction code (ecc) engine configured to generate ecc parity information corresponding to write data to be transmitted to the memory device, a data bus inversion (dbi) engine configured to generate dbi information corresponding to the write data to be transmitted to the memory device, and a memory controller configured to control the ecc engine and the dbi engine. the plurality of channels may include a data channel group, including a plurality of data channels, and an ecc channel group including a plurality of ecc channels. the dbi information may be transmitted from the host to the memory device through an unused ecc channel in the ecc channel group.
Abstract: a memory controller includes processing circuitry configured to, set a resource allocation ratio for multiple users, allocate a plurality of resources to the multiple users based on the resource allocation ratio, the plurality of resources being used by the multiple users to access a memory device, the plurality of resources including at least one independent resource type resource and at least one shared resource type resource, the allocating the plurality of resources including independently allocating the at least one independent resource type resource to the multiple users based on the resource allocation ratio and allocating the at least one shared resource type resource to the multiple users in a time-division manner based on the resource allocation ratio, and perform a fetch operation on memory commands associated with the multiple users based on the allocated plurality of resources to the multiple users, the memory commands being generated by the multiple users.
Abstract: a method and device are provided in which the memory subsystem receives a range of system addresses. an address encoder of the memory subsystem encodes the system addresses to generate encoded system addresses. a first number of least significant bits (lsbs) subject to change in encoding each of the system addresses in the range is based on a lesser of a second number of trailing 0s in a binary representation of the base address and a third number of trailing 0s in a binary representation of a fourth number of the system addresses in the range. in encoding the system addresses, bit values of remaining bits in the encoded system addresses are equal to corresponding bit values in the system addresses.
Abstract: a networking switch, including: a descriptor decoder configured to obtain descriptor data by decoding a direct memory access (dma) descriptor packet encapsulated in a packet transferred, the packet from a host device; and a link power controller configured to adjust, based on the descriptor data, a power state of a link to be passed through in a bus interface connected to the networking switch.
Abstract: a method includes retrieving, using at least one processing device of an electronic device, content information related to content from a content source. the method also includes inputting, using the at least one processing device, the content information into a machine learning model, where the machine learning model is trained to recognize features of the content information. the method further includes receiving, using the at least one processing device, a plurality of predicted hashtags for the content from the machine learning model, where each one of the plurality of predicted hashtags includes a probability score. the method also includes scoring, using the at least one processing device, the plurality of predicted hashtags based on the probability score of each one of the plurality of predicted hashtags. in addition, the method includes outputting, using the at least one processing device, the at least one of the plurality of predicted hashtags.
20250200135. SYSTEMS METHODS DATA PROCESSING MACHING LEARNING (Samsung Electronics ., .)
Abstract: provided are systems, methods, and apparatuses of data processing for machine learning. in one or more examples, the systems, devices, and methods include determining priority values for elements of a weight matrix based on a gradient of a loss function of an ai model and the weight matrix; determining an index value based on a number of elements in the weight importance matrix and a sparsity ratio; determining a threshold based on sorting the elements of the weight importance matrix in sequential order and determining a value of an element of the sorted weight importance matrix based on using the index value as an index of the sorted weight importance matrix; determining a pruned weights matrix based on the threshold; and processing a query using an updated ai model, the updated ai model being based on the pruned weights matrix being implemented in the ai model.
20250200236. ELECTRONIC DEVICE METHOD OPERATING SAME (Samsung Electronics ., .)
Abstract: an electronic device for solar power generation simulation obtains at least one information useable to perform a solar power generation simulation on a solar device having a solar power generation function, transmit the at least one information including the window transmission loss rate-related information to the server, receive result data of the solar power generation simulation from the server, and display the recommended placement area and information related to the solar power generation effect on the space or a map associated with the space, based on the result data. the information about the solar power generation effect is obtained based on the window transmission loss rate-related information.
20250200264. WAFER CALCULATOR METHOD FABRICATING WAFER CALCULATOR (Samsung Electronics ., .)
Abstract: a wafer calculator and a method of fabricating the wafer calculator are provided. the wafer calculator includes: processing elements each having a respective dedicated semiconductor pattern that is configured to perform an operation of a respectively corresponding partial area among partial areas of an artificial intelligence (ai) model; and routing elements that are each configured to provide a communication path for exchanging operation results of the operations of the partial areas according to a network structure of the ai model.
Abstract: the inventive concepts provide a mis-alignment (ma) detection method for a semiconductor device, the ma detection method comprising; inputting size information about a unit cell block of the semiconductor device, generating a finite element method (fem) model based on the size information, calculating a residual stress function of the unit cell block using the fem model, generating a bulk layer effect (ble) prediction algorithm for the unit cell block by inputting the residual stress function into an initial ble prediction algorithm generated based on a main cell block of the semiconductor device, and selectively detecting the ma of the unit cell block using the ble prediction algorithm.
20250200301. LEARNING COMPRESS PROMPT NATURAL LANGUAGE FORMATS (Samsung Electronics ., .)
Abstract: methods, systems, and apparatuses for performing natural language prompt compression, the method being performed by an electronic device and including: obtaining a prompt for an artificial intelligence (ai) inference model, wherein the prompt corresponds to a first plurality of tokens; providing the prompt as an input to an ai compression model; and obtaining a compressed prompt based on an output of the ai compression model, wherein the compressed prompt corresponds to a second plurality of tokens which is smaller than the first plurality of tokens, and wherein the prompt and the compressed prompt are expressed using natural language.
Abstract: provided are method and apparatus for writing and reproducing a multimedia service using a tag in order to provide an intuitive interface for a user using a multimedia service. the method includes selecting a multimedia service to be written; generating tag information identifying the selected multimedia service; and writing the generated tag information to a tag. accordingly, multimedia service information and content information can be stored in a tag by being written to tag information using a common format, and thus the user can later execute a service operation by easily writing information of a desired service operation to a tag and then simply connecting the tag to a tag reading device.
20250200338. SYSTEM METHOD NEURAL NETWORK ARCHITECTURE SEARCH (Samsung Electronics ., .)
Abstract: a system and a method are disclosed for neural network architecture search. in some embodiments, the method includes: performing a neural network architecture search, wherein: the performing of the neural network architecture search includes mutating a first neural network architecture, to form a second neural network architecture, and the mutating includes adding a residual block to the first neural network architecture or removing a residual block from the first neural network architecture.
20250200360. METHOD APPARATUS ORGANIC MOLECULE SPECTRUM PREDICTION (Samsung Electronics ., .)
Abstract: a method and apparatus with organic molecule spectrum prediction are disclosed. the method includes accessing a molecular structure representation of an organic molecule; generating parameters of an approximated franck-condon progression by inputting the molecular structure representation to a neural network model that infers the parameters from the molecular structure representation; and generating a spectrum of the organic molecule based on the generated parameters.
20250200383. METHOD APPARATUS PARALLEL TRAINING NEURAL NETWORK MODEL (Samsung Electronics ., .)
Abstract: a method and apparatus for parallel training of a neural network model are provided. the method includes generating a plurality of partial data sets by dividing training data for a neural network model, identifying a plurality of pipeline stages of the neural network model, determining a plurality of keeping policies, wherein each of the plurality of keeping policies corresponds to values generated by a selected pipeline stage of the plurality of the pipeline stages using a selected partial data set of the plurality of partial data sets, and training the neural network model by processing the values generated by the selected pipeline stages based on the selected partial data set according to a corresponding keeping policy for each of the plurality of keeping policies.
Abstract: provided is a 5-generation (5g) or 6-generation (6g) communication system for supporting higher data rates after the 4-generation (4g) communication system such as long term evolution (lte). a method by which a user equipment (ue) performs communication includes receiving, from a base station (bs), learning model information for an artificial intelligence (ai) model. the method includes determining whether to retrain the ai model, based on inference information obtained by using the ai model and the learning model information. the method includes transmitting, to the bs, a request message for retraining the ai model, in case that the retraining of the ai model is determined.
20250200678. ELECTRONIC APPARATUS CONTROLLING METHOD THEREOF (Samsung Electronics ., .)
Abstract: an electronic apparatus is provided. the electronic apparatus includes memory including one or more storage media storing instructions and a preset period for measuring electrical energy, and one or more processors communicatively coupled to the memory, wherein the instructions, when executed by the one or more processors individually or collectively, cause the electronic apparatus to, based on an electrical energy prediction command being received, acquire collected electrical energy from a start time of a preset period to a time when the electrical energy command is received, acquire predicted electrical energy corresponding to the preset period based on the collected electrical energy, based on the predicted electrical energy exceeding target electrical energy, acquire a number of remaining days from a time when the electrical energy prediction command is received to a time when the preset period ends, acquire a first number of operating days for which the electronic apparatus operates in a normal mode and a second number of operating days for which the electronic apparatus operates in a power-saving mode based on the collected electrical energy, the target electrical energy and the number of remaining days, generate schedule information such that the electronic apparatus operates in a power-saving mode for the second operating days during the remaining period, and determine an operation mode of the electronic apparatus based on the schedule information.
Abstract: a method for performing tile to raster (t2r) conversion includes: receiving tile input data including a stream of a plurality of tiles each having a tile height, a tile input width, a macroblock width (mbw), and data bits; segmenting the tile input data based on a total number of virtual square tiles; segmenting a tile buffer (tb) into one or more of the virtual square tiles based on the received tile input data; and performing a raster-scanning operation on each of the segmented tile input data and the segmented tb based on the total number of virtual square tiles to generate raster data.
20250200701. METHOD APPARATUS HIGH-RESOLUTION IMAGE RESTORATION (Samsung Electronics ., .)
Abstract: a processor-implemented method with high-resolution (hr) image restoration includes mapping an input image with low resolution (lr) to a feature map of a latent domain, generating, using a diffusion model, an hr feature in which a certain frequency component corresponding to the feature map is restored, and based on the hr feature and coordinate information and pixel information of an hr image at a target magnification, restoring the hr image at the target magnification corresponding to the feature map.
20250200712. APPARATUS METHOD IMAGE PROCESSING (Samsung Electronics ., .)
Abstract: an apparatus with image processing includes one or more processors configured to generate a first transfer image corresponding to an input image by performing style transfer on the input image, using an image style transformer model, obtain transfer quality evaluation data on the first transfer image, using the image style transformer model, obtain a gradient for a style transfer loss, based on the transfer quality evaluation data, obtain update information on the first transfer image from an update information generation model to which the gradient is input, and generate a second transfer image by updating the first transfer image, based on the update information.
20250200715. METHOD ELECTRONIC DEVICE MOTION-BASED IMAGE ENHANCEMENT (Samsung Electronics ., .)
Abstract: a method for motion-based image enhancement is provided. the method may include receiving a plurality of image frame(s) including a subject(s) that performs an action(s). the method may include determining the plurality of key points associated with the subject(s) of the plurality of image frame(s) and detecting the action(s) performed by the subject(s) using the plurality of estimated key points. the method may include identifying a motion characteristic(s) associated with the plurality of estimated key points. the method may include identifying one or more regions in the plurality of image frame(s) to be enhanced based on the determined motion characteristic(s) with the plurality of estimated key points and the detected action(s). the method may include generating an enhanced image including the one or more enhanced regions compared to the one or more regions of the obtained image frame(s).
20250200720. DETAIL PRESERVING DENOISER SHORT EXPOSURE IMAGES (Samsung Electronics ., .)
Abstract: a method includes obtaining a noisy training image and a ground truth image and converting the noisy training image into a first plurality of color channels. the method also includes generating, using an artificial intelligence/machine learning (ai/ml)-based denoiser, denoised images from the first plurality of color channels. each denoised image corresponds to a respective color channel of the first plurality of color channels. the method further includes generating a noisy ground truth image from the ground truth image and converting the noisy ground truth image into a second plurality of color channels. in addition, the method includes determining a loss based on a comparison between the denoised images and the second plurality of color channels and adapting weights of the ai/ml-based denoiser based on the loss determined based on the comparison between the denoised images and the second plurality of color channels.
20250200722. METHOD DEVICE IMAGE ENHANCEMENT (Samsung Electronics ., .)
Abstract: a processor-implemented method with image enhancement includes, based on an input image, region information about a local region of the input image, and style information about a target style to be applied to the local region, generating a local feature representation, generating a global feature representation based on the input image, based on the local feature representation, the global feature representation, and the region information, determining an adjustment parameter set, and, based on the adjustment parameter set, generating a retouch result by adjusting the input image.
Abstract: a method includes obtaining, using at least one imaging sensor, an image frame. the method also includes mapping, using at least one processing device, the image frame to a mesh including multiple vertices. the method further includes performing, using the at least one processing device, noise reduction to determine color data of pixels located on the vertices of the mesh. performing the noise reduction includes using a denoising filter to denoise the image frame. the method also includes determining, using the at least one processing device, color data of remaining pixels not located on the vertices of the mesh based on the determined color data of the pixels located on the vertices to generate a denoised image. in addition, the method includes performing, using the at least one processing device, image enhancement of the denoised image to enhance at least part of the denoised image and generate an enhanced image.
20250200728. MACHINE LEARNING-BASED MULTI-FRAME DEBLURRING (Samsung Electronics ., .)
Abstract: a method includes obtaining, using at least one processing device of an electronic device, multiple input image frames generated during a multi-frame capture operation, where each input image frame exhibits an amount of blur. the method also includes determining, using the at least one processing device, a blurriness score for each of the input image frames. the method further includes generating, using the at least one processing device, sharp denoised frames using the input image frames. in addition, the method includes generating, using the at least one processing device, a final sharp image based on the sharp denoised frames and the blurriness scores of the input image frames.
20250200757. TEMPORALLY-COHERENT IMAGE RESTORATION USING DIFFUSION MODEL (Samsung Electronics ., .)
Abstract: a method includes obtaining, using at least one processing device of an electronic device, first and second image frames. the method also includes generating, using the at least one processing device, a first noise map for the first image frame. the method further includes determining, using the at least one processing device, motion information between the first image frame and the second image frame. the method also includes generating, using the at least one processing device, a second noise map for the second image frame based on the first noise map and the motion information. in addition, the method includes generating, using the at least one processing device, a first restored image frame based on the first image frame and the first noise map and a second restored image frame based on the second image frame and the second noise map using a trained diffusion model.
20250200771. IMAGE PROCESSING DEVICE OPERATING METHOD THEREOF (Samsung Electronics ., .)
Abstract: an image processing device for performing three-dimensional (3d) conversion and a method performed by the image processing device are provided. the image processing device includes a memory to store one or more instructions, and at least one processor configured to execute the one or more instructions stored in the memory. the processor may be configured to analyze a content class of an input image. the processor may be configured to obtain a depth estimation model corresponding to the content class of the input image in real time by using on-device learning, based on a result of analyzing the content class of the input image. the processor may be configured to obtain a depth map of the input image that reflects estimated depth information, based on the depth estimation model according to the on-device learning. the processor may be configured to perform 3d conversion for the input image, based on the depth map of the input image.
Abstract: an image processing network module, an image processing device, and a method of operating the image processing device are provided. the image processing network module includes an encoder configured to receive input image data and change a bit depth of the input image data to generate first image data, a quantization network configured to quantize the first image data to generate second image data, and a decoder configured to receive the second image data and change a bit depth of the second image data to generate output image data.
Abstract: according to an embodiment of the present disclosure, a method, performed by an electronic device, of displaying a notification from an external device may include: obtaining notification information from the external device; obtaining the location information of the external device; determining a location and a size of a first region of a display of the electronic device to display, on the first region, at least one image obtained through at least one camera of the electronic device, based on the obtained location information of the external device; and displaying the at least one image on the first region of the display.
Abstract: according to an embodiment, at least one processor of a wearable device may display, based on an input for entering a virtual space, on a display the virtual space. the at least processor may display within the virtual space a first avatar which is a current representation of a user and has a first appearance. the at least processor may display within the virtual space a first avatar together with a visual object for a second avatar which is a previous representation of the user and has a second appearance different from the first appearance of the first avatar. for example, the metaverse service is provided through a network based on 5g (fifth generation), and/or 6g (sixth generation).
Abstract: a system and a method are disclosed for performing video segmentation, including obtaining a plurality of frames from an input video; extracting a plurality of features from the plurality of frames; obtaining query embeddings corresponding to the plurality of features; refining the query embeddings in a forward time order to generate forward embeddings, and in a backward time order to generate backward embeddings; fusing the forward embeddings and the backward embeddings to obtain fused embeddings; and generating a classification prediction corresponding to the input video based on the fused embeddings.
20250200990. METHOD DEVICE PARKING SPACE NAVIGATION (Samsung Electronics ., .)
Abstract: a method and device with parking space navigation are provided. an operating method of a moving object includes: obtaining, from cameras of the moving object, images of surroundings of the moving object that are captured by the cameras; determining a candidate area for parking the moving object by performing object detection on the images; determining whether the candidate area is occupied by performing scene segmentation on the images; and based on determining that the candidate area is not occupied, determining whether the moving object is able to be parked into the candidate area based on a template area corresponding to a size of the moving object.
20250201024. ELECTRONIC DEVICE METHOD TRACKING MOTION USER (Samsung Electronics ., .)
Abstract: an electronic device includes: a camera; one communication circuitry to communicate with an external electronic device; and one processor configured to: obtain an image for the external electronic device, based on a first camera setting; receive, from the external electronic device, speed information of the external electronic device; and change the first camera setting to a second camera setting, based on the received speed information; wherein the first camera setting comprises a first frame length, wherein the second camera setting comprises a second frame length, wherein, in a first case that the speed information is greater than or equal to a threshold value, the second frame length is shorter than the first frame length, and wherein, in a second case that the speed information is smaller than the threshold value, the second frame length is longer than the first frame length.
20250201043. STORAGE DEVICE, SENSOR SYSTEM VEHICLE INCLUDING SAME (Samsung Electronics ., .)
Abstract: a vehicle storage device according to at least one embodiment includes: a first interface configured to transmit a first signal to an object, and to receive first data generated by analog to digital converting a second signal reflected and returned to the object outside a vehicle; a radar pre-processor configured to generate second data by performing a pre-processing operation on the first data; a second interface configured to output the second data; and a non-volatile memory configured to store the first data.
Abstract: a wearable device is provided. the wearable device includes a first display module, a second display module, memory storing one or more computer programs, and one or more processors communicatively coupled to the first display module, the second display module, and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors individually or collectively, cause the wearable device to output image data through the first display module and the second display module in a first mode, switch from the first mode to a second mode based on at least one of an occurrence of a notification event, a moving speed of the wearable device, or a type of an application executing on the wearable device, determine any one of the first display module or the second display module as an output display module in the second mode, and control the output display module to output the image data through the determined output display module.
Abstract: a display driving integrated circuit includes: a gamma voltage generator outputs a plurality of gamma voltages at a first voltage level based on a first control signal in a first time period among a plurality of time periods, outputs a plurality of gamma voltages at a second voltage level based on a second control signal in a second time period among the plurality of time periods, and outputs a reference voltage that swings between a third voltage level lower than the first voltage level and a fourth voltage level higher than the second voltage level in the plurality of time periods; and a source block circuit receives input data in response to a first clock signal in the first time period, selects a first gamma voltage among the plurality of gamma voltages of the first voltage level based on the input data, and compares the first gamma voltage and the reference voltage.
Abstract: an electronic device is provided. the electronic device includes a housing, a flexible display in which a size of a display area visible from outside of the electronic device is variable from a first size to a second size based on moving of at least part of the housing, memory storing one or more computer programs, and one or more processors communicatively coupled to the flexible display and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors individually or collectively, cause the electronic device to display an execution screen of a first application in a first area of the flexible display in a state that the size of the display area is in the first size, while the display area is changed from the first size to the second size, display at least a portion of the execution screen of the first application or a simplified screen of the execution screen of the first application, in a second area including at least a portion of the first area, and while the size of the display area is changed from the first size to the second size, display an execution screen of a second application, corresponding to the size of the display area, in a third area including at least a portion of a display area newly visible from the outside of the electronic device, and wherein a velocity at which the execution screen of the second application is displayed, corresponding to the size of the display area, is different from a velocity at which a size of the display area is changed.
20250201168. DISPLAY DEVICE CONTROL METHOD THEREOF (Samsung Electronics ., .)
Abstract: a display device includes: a display panel including a plurality of pixels connected to a plurality of gate lines; a main controller configured to process a source signal and output an image signal; and a timing controller configured to output a driving signal to drive the display panel based on the image signal, where the main controller is configured to: divide a screen of the display panel into a plurality of regions based on an amount of data change of the source signal, and output the image signal to display an image at different refresh rates in each of the plurality of regions.
Abstract: a transparent display module includes: a transparent substrate; a line pattern provided on the transparent substrate in a form of a two-dimensional grid; a plurality of micro-pixel integrated circuits (ics) provided on the line pattern; a plurality of inorganic light emitting elements provided on the line pattern or the plurality of micro-pixel ics; a plurality of transparent areas formed in areas in which the line pattern is not provided, and at least one pixel circuit configured to supply a driving current to the plurality of inorganic light emitting elements.
20250201244. ELECTRONIC DEVICE METHOD EFFICIENT KEYWORD SPOTTING (Samsung Electronics ., .)
Abstract: a system and a method are disclosed for keyword spotting in a digital audio stream. the method includes processing the digital audio stream to extract a feature matrix; applying a set of one-dimensional temporal convolutions to the feature matrix to obtain a first convolved feature matrix; transposing time and frequency dimensions of the feature matrix to obtain a transposed matrix; applying a set of one-dimensional frequency convolutions to the transposed matrix to obtain a second convolved feature matrix; identifying a presence of a keyword based on further processing of a combination of the first and second convolved feature matrices; and performing a function in response to the presence of the keyword.
Abstract: an electronic device includes: a flexible display having at least one folding area; at least one hinge configured to fold or unfold the at least one folding area between a first angle and a second angle; a plurality of sensors configured to collect folding data including information of a state of the at least one hinge; a memory storing a video including a plurality of images to be displayed on the flexible display and the folding data; and one or more processors configured to: read the folding data and determine a deformation of the at least one hinge; match the plurality of images to a plurality of angles between the first angle and the second angle; determine a current angle of the at least one hinge via the folding data; and display an image matched to the current angle of the at least one hinge on the flexible display.
20250201280. SEMICONDUCTOR DEVICE DATA STORAGE SYSTEM INCLUDING SAME (Samsung Electronics ., .)
Abstract: a semiconductor device includes first structure including first and second memory blocks. the first memory block has a first connection region, a first memory cell array region, and a second connection region. the second memory block has a third connection region, a second memory cell array region, and a fourth connection region. first gate electrodes of the first memory block include first word lines having first word line pads disposed in the second connection region, and a first upper gate line having a first upper gate pad disposed in the first connection region and disposed on the first word lines. second gate electrodes of the second memory block include second word lines having second word line pads disposed in the third connection region, and a second upper gate line having a second upper gate pad disposed in the fourth connection region and disposed on the second word lines.
Abstract: a storage device includes at least one nonvolatile memory device, and a controller configured to control the at least one nonvolatile memory device, wherein the controller includes a nonvolatile memory interface circuit configured to communicate with the at least one nonvolatile memory device through at least one channel, wherein the nonvolatile memory interface circuit includes a margin collector configured to collect margin information by comparing read data with sampling data, an on-chip margin search logic configured to track a valid window margin by adjusting an offset value based on the margin information, and a compensation calculator configured to determine off-chip variation corresponding to the offset value when the valid window margin is in a margin lock state.
20250201289. HIGH-BANDWIDTH MEMORY DEVICE OPERATION METHOD THEREOF (Samsung Electronics ., .)
Abstract: disclosed is an operation method of a high bandwidth memory (hbm) device which includes receiving a mode register set (mrs) command through row command/address signal lines in an idle mode, performing an mrs operation in response to the mrs command, receiving an activate (act) command through the row command/address signal lines in the idle mode, and switching to an activate mode in response to the act command. switching to the activate mode includes switching one or more memory buffers of the hbm device to an active state.
Abstract: a memory array includes a word lines intersecting bit line-complementary bit line pairs at a plurality of cell locations. magnetic tunnel junction cells are located at each location, and each cell is electrically connected to a corresponding bit line and selectively interconnected to a corresponding one of the complementary bit lines under control of a corresponding one of the word lines. each cell includes a substrate; a seed layer overlying the substrate; a nitride layer, overlying the seed layer, and having a thickness greater than 5 angstroms; a templating layer, outward of the nitride layer, including a binary alloy having an alternating layer lattice structure, and having a thickness greater than 50 angstroms; a magnetic layer overlying the templating layer, including a heusler compound and exhibiting pma; a tunnel barrier outward of the magnetic layer; and a magnetic layer outward of the tunnel barrier.
20250201298. SEMICONDUCTOR MEMORY DEVICE METHOD CONTROLLING SAME (Samsung Electronics ., .)
Abstract: provided is a semiconductor memory device and a method of operating same, the semiconductor memory device including: a memory cell array including a memory cell; a bitline sense amplifier having an open bitline structure and including a plurality of switching transistors, wherein the bitline sense amplifier is connected to the memory cell via a bitline and a complementary bitline, and the plurality of switching transistors are configured to control connections between the bitline, the complementary bitline, a sensing bitline and a complementary sensing bitline based on a plurality of switching signals; a temperature measurement circuit configured to measure an operation temperature of the semiconductor memory device and to generate a temperature code corresponding to the operation temperature; and a sense amplifier controller configured to reduce sensing noise of the bitline sense amplifier by controlling timing of the plurality of switching signals based on the temperature code.
Abstract: provided are a vertical non-volatile memory device and an electronic apparatus including the same. the vertical non-volatile memory device includes a plurality of cell strings, each cell string of the plurality of cell strings includes a channel layer, a charge tunneling layer on the channel layer, a charge trap layer in the charge tunneling layer, a first charge blocking layer on the charge trap layer, a second charge blocking layer provided on the first charge blocking layer, and a gate electrode on the second charge blocking layer. the second charge blocking layer may include a first layer and a second layer, the first layer including a ferroelectric material or an anti-ferroelectric material, the second layer configured to facilitate crystallization of the first layer.
Abstract: provided is a vertical nonvolatile memory device in which a thickness of one memory cell is reduced to reduce an entire thickness of a memory cell string and increase the number of stacked memory cells. the nonvolatile memory device includes a plurality of memory cell strings. each of the memory cell strings may include a plurality of insulating spacers each extending in a first direction, a plurality of gate electrodes each extending in the first direction and alternately arranged with the plurality of insulating spacers in a second direction perpendicular to the first direction, and a plurality of contacts respectively arranged to contact a side surface of the plurality of gate electrodes respectively corresponding to the plurality of contacts.
20250201310. THREE-DIMENSIONAL MEMORY DEVICE (Samsung Electronics ., .)
Abstract: a memory device includes a first semiconductor layer including a peripheral circuit therein and a second semiconductor layer stacked on the first semiconductor layer in a vertical direction and including a memory cell array electrically connected to the peripheral circuit. the first semiconductor layer includes a page buffer area in which a page buffer circuit is disposed, the second semiconductor layer includes a cell area in which a plurality of bit lines is arranged at regular intervals along a first direction, and a length in the first direction of the page buffer area is different from a length in the first direction of the cell area.
20250201320. NONVOLATILE MEMORY DEVICES MULTIPLE OPERATION MODES (Samsung Electronics ., .)
Abstract: a method of operating a page buffer included in a non-volatile memory device includes determining a read mode, setting at least one condition among a capacitance of a sensing node of the page buffer, a precharge level of the sensing node, and a trip level of a sensing latch of the page buffer according to the read mode, and performing a program or read operation on a selected cell according to the at least one set condition.
Abstract: a memory device includes a memory cell array region including a plurality of memory cells, a first test pattern form disposed below a bonding pad and configured to output a first test output signal, a second test pattern form disposed below a non-bonding pad and configured to output a second test output signal, and a damage detection circuit. the damage detection circuit is configured to output a test result signal indicating whether a lower region of the bonding pad has been damaged. the test result signal is based on the number of times a logic level of the first test output signal transitions and the number of times a logic level of the second test output signal transitions.
20250201333. STORAGE DEVICE METHOD APPLYING DYNAMIC PARITY (Samsung Electronics ., .)
Abstract: in a storage device, an ecc engine performs first ecc encoding on first data to be programmed to a first wordline to generate a first parity, and performs second ecc encoding on second data to be programmed to a second wordline to generate a second parity. a page buffer stores the first data together with a first part of the first parity to be programmed to the first wordline, and stores the second data, a second part of the first parity, and the second parity to be programmed to the second wordline.
20250201468. THREE DIMENSIONAL INDUCTOR METHOD MANUFACTURING SAME (Samsung Electronics ., .)
Abstract: the inductor includes a substrate, a plurality of first horizontal wires above an upper surface of the substrate, a plurality of second horizontal wires above a back surface of the substrate, and a plurality of vertical wires, wherein the plurality of vertical wires connect the plurality of first horizontal wires to the plurality of second horizontal wires to form a spiral.
20250201520. APPARATUS METHOD TREATING SUBSTRATE (Samsung Electronics ., .)
Abstract: a substrate treatment apparatus including a chamber; a lower electrode in the chamber, wherein the substrate is on the lower electrode; an upper electrode in the chamber, and above the lower electrode; a pulse signal generator configured to generate a pulse signal; and a bias power supply configured to generate bias power having a pulsed non-sinusoidal waveform using the pulse signal, and supply the generated bias power to the lower electrode, wherein the bias power supply includes a dc power generator configured to receive the pulse signal and generate a direct-current (dc) voltage subjected to feedforward compensation based on the pulse signal; and a modulator configured to generate a power signal having a non-sinusoidal waveform using the dc voltage, and filter the power signal using the pulse signal to generate the bias power having the pulsed non-sinusoidal waveform.
Abstract: an arcing detection sensor comprises a substrate portion having a plurality of through holes; a plurality of circular conductive patterns, each circular conductive pattern arranged along a circumference of a respective through hole of the plurality of through holes; and a coil conductive pattern surrounding the plurality of circular conductive patterns. each circular conductive pattern is configured to detect a voltage of a respective conductive wire passing through the respective through hole, and the coil conductive pattern is configured to detect currents of the conductive wires passing through the plurality of through holes.
20250201560. METHODS FABRICATING SEMICONDUCTOR DEVICES (Samsung Electronics ., .)
Abstract: a method of fabricating a semiconductor device comprises: providing a substrate including a cell region and a peripheral region; stacking first and second mask layers on the substrate; patterning the second mask layer to form a first mask pattern including line patterns, wherein the line patterns extend from the cell region into a portion of the peripheral region, removing the first mask pattern on the portion; forming a first spacer layer on an upper surface of the first mask layer and on sidewalls and an upper surface of the first mask pattern on the cell region; etching the first spacer layer to form second mask patterns on the sidewalls of the first mask pattern on the cell region; removing the first mask pattern on the cell region; forming a third mask pattern on the peripheral region; and patterning the first mask layer using the second and third mask patterns.
Abstract: a method of forming patterns including forming an etch target layer on a substrate, the substrate including a first area and a second area, forming a hardmask structure on the etch target layer, forming a first photoresist layer on the hardmask structure, forming a first photoresist pattern and a first dummy pattern, forming a hardmask pattern corresponding to the first photoresist pattern and a second dummy pattern corresponding to the first dummy pattern, forming a second photoresist layer on the second dummy pattern and the hardmask pattern, forming a second photoresist pattern covering the second dummy pattern and exposing the hardmask pattern, and forming a resulting pattern from the etch target layer by using the hardmask pattern as an etch mask may be provided.
20250201588. APPARATUS METHOD TREATING SUBSTRATE (Samsung Electronics ., .)
Abstract: apparatus and method for treating substrate, are provided. a substrate treatment apparatus includes an upper body, a lower body coupled to the upper body and defining a substrate treating space therebetween, a seal disposed between the upper body and the lower body, wherein the seal seals the substrate treating space from an outside, a fluid supply unit configured to supply fluid to the substrate treating space and a controller. the fluid supply unit includes a first auxiliary fluid supply unit configured to control the fluid to flow at a first flow rate and a second auxiliary fluid supply unit configured to the fluid to flow at a second flow rate different from the first flow rate. the controller is configured to control the first auxiliary fluid supply unit and the second auxiliary fluid supply unit such that the fluid flows into the substrate treatment space through the first auxiliary fluid supply unit and the second auxiliary fluid supply unit in an ultra-high-speed pressurizing step, during at least one time interval.
Abstract: a fan filter unit includes: a housing; a centrifugal fan which rotates inside the housing about a rotary axis that extends in a first direction; a first plate surrounding at least a part of a side surface of the centrifugal fan; and a second plate disposed below the centrifugal fan and the first plate, and including a plurality of micro holes each extending in the first direction, wherein a first airflow path, which extends in the first direction, and a second airflow path, which is connected to a lower part of the first airflow path, are formed between the centrifugal fan and the first plate, and the second airflow path has an inclination with respect to a lower surface of the centrifugal fan.
Abstract: a laminating device that prevents defects in a semiconductor chip caused by tension imbalance includes a substrate support on which a target substrate is disposed, a guide table that surrounds a circumference of the target substrate, and a press roller that attaches a lamination tape by pressing the lamination tape against upper surfaces of the target substrate and the guide table. the guide table includes plurality of vacuum holes that adsorb the lamination tape.
20250201602. HYBRID BONDING APPARATUS (Samsung Electronics ., .)
Abstract: a hybrid bonding apparatus may include a central pushing module, at least two edge pushing modules and a bonding tool. the central pushing module may apply a central pressure to a central portion of a semiconductor chip toward a package substrate. the at least two edge pushing modules may apply an edge pressure to edge portions of the semiconductor chip toward the package substrate. the bonding tool may transfer the central pressure and the edge pressure to the semiconductor chip. thus, a hybrid bonding process for bonding the semiconductor chip to the package substrate may be progressed from the central portion of the semiconductor chip toward the edge portions of the semiconductor chip. as a result, a bubble caused by air or a particle may not be captured between the semiconductor chip and the package substrate to improve electrical connection reliability between the semiconductor chip and the package substrate.
20250201641. SEMICONDUCTOR PACKAGES HAVING SUBSTRATE CONNECTING PORTIONS (Samsung Electronics ., .)
Abstract: a semiconductor package according to example embodiments may include: a substrate including a connecting portion including a bonding pad; a first semiconductor chip disposed on the substrate; an underfill between the substrate and the first semiconductor chip; a second semiconductor chip disposed on the first semiconductor chip; an encapsulant covering the substrate, the first semiconductor chip, and the second semiconductor chip. the bonding pad is disposed on a level higher than that of an upper pad disposed on an upper surface of the substrate.
Abstract: the present disclosure relates to a semiconductor package, a wiring substrate included in the same, and a manufacturing method of a semiconductor package. a semiconductor package according to an embodiment includes a wiring substrate having a first surface and a second surface opposite to each other, a semiconductor chip connected to the wiring substrate and positioned on the first surface of the wiring substrate, and an underfill layer between the wiring substrate and the semiconductor chip. the wiring substrate includes a wiring pattern, a solder resist layer including an opening exposing a portion of the wiring pattern at the first surface, and a dam protruding away from the wiring substrate at a region external to a lateral extent the semiconductor chip at the first surface. the solder resist layer further includes an uneven portion at a surface of the solder resist layer between the dam and the opening. the uneven portion is between the semiconductor chip and the dam in a plan view.
20250201643. STACKED IC PACKAGE (Samsung Electronics ., .)
Abstract: a stacked integrated circuit (ic) package includes: a package substrate; a first die stacked on the package substrate; second dies each stacked on the first die and spaced apart from each other on the first die; and a stiffener stacked on the first die and arranged between the second dies.
20250201660. SEMICONDUCTOR PACKAGE (Samsung Electronics ., .)
Abstract: a semiconductor package may include a lower redistribution layer structure including lower redistribution layers and a lower semiconductor chip, a sealing member on the lower semiconductor chip, through vias extending into the sealing member, an upper redistribution layer structure on the sealing member, a bonding pad and a heat slug pad on the upper redistribution layer structure, an upper package on the bonding pad, a plurality of heat slug posts on the heat slug pad, a thermal interface material layer on the heat slug pad and the plurality of heat slug posts, and a heat slug pattern on the thermal interface material layer, where the bonding pad is electrically connected to the upper redistribution layers, and where a thermal conductivity of the heat slug pad and a thermal conductivity of the plurality of heat slug posts is greater than a thermal conductivity of the thermal interface material layer.
20250201669. SYSTEM METHODS LIQUID COOLING PACKAGE ARCHITECTURE (Samsung Electronics ., .)
Abstract: disclosed herein are methods, systems and devices including a first layer with at least one transistor, a second layer on a first side of the first layer, the second layer including a signal layer, a third layer on a second side of the first layer, the second side opposite the first side. the third layer may include a backside power delivery device. a liquid heat exchanger may be connected to the signal layer, and the first layer, the second layer, the third layer and the liquid heat exchanger may be stacked. the liquid heat exchanger may include a first cooling layer, a second cooling layer connected to the first cooling layer, and a third cooling layer connected to the second cooling layer, the second cooling layer between the first cooling layer and the third cooling layer. the liquid heat exchanger may include an inlet contacting the second cooling layer and an outlet contacting the first cooling layer.
20250201685. SEMICONDUCTOR PACKAGE (Samsung Electronics ., .)
Abstract: a semiconductor package includes: a package substrate; a first interposer and a second interposer on the package substrate, the first interposer and the second interposer being spaced apart from each other in a horizontal direction parallel to an upper surface of the package substrate; a first logic chip and first memory chips on the first interposer; a second logic chip and second memory chips on the second interposer; and a connection chip on the first and second interposers and electrically connecting the first and second interposers. the connection chip may electrically connect the first and second logic chips, and is between the first and second logic chips.
20250201690. SYSTEM METHODS EMBEDDED BRIDGING PACKAGE ARCHITECTURE (Samsung Electronics ., .)
Abstract: disclosed herein are methods, systems and devices including a first layer with a first compute device, a first device stack, and a second device stack between the first device stack and the first compute device. a second layer may be mounted on top of the first layer. the second layer may include a first bridge electrically connecting the first compute device to the first device stack and a second bridge electrically connecting the first compute device to the second device stack.
20250201700. INTEGRATED CIRCUIT DEVICE (Samsung Electronics ., .)
Abstract: provided is an integrated circuit device. the integrated circuit device includes a substrate, a cell transistor disposed on a substrate, a contact electrically connected to the cell transistor, a conductive via disposed on the contact and including a via conductive layer disposed on a top surface of the contact and a via skin layer covering a top surface of the via conductive layer, a first interlayer insulation layer surrounding a portion of a sidewall of the conductive via, and a wiring line disposed on the interlayer insulation layer, extending in a first horizontal direction, contacting a top surface of the conductive via, and including a bottom barrier line and a main conductive line disposed on the bottom barrier line.
Abstract: provided is an integrated circuit including a first die including a first substrate and a plurality of through silicon vias (tsvs) penetrating through the first substrate, and a second die disposed below the first die in a vertical direction perpendicular to an in-plane direction of the first die and including a second substrate and a plurality of conductive interconnects electrically connected to separate, respective tsvs of the plurality of tsvs, wherein the first die further includes an inductor in at least one first layer over the first substrate in the vertical direction, and the inductor at least partially overlaps at least one tsv of the plurality of tsvs in the vertical direction.
Abstract: a semiconductor chip includes a semiconductor substrate having a first surface and a second surface opposite to the first surface, an interconnect structure disposed on the second surface of the semiconductor substrate, a plurality of conductive patterns apart from the semiconductor substrate with the interconnect structure therebetween and each connected to the interconnect structure, a compensation pattern apart from the plurality of conductive patterns on the interconnect structure in a horizontal direction and farther from the second surface of the semiconductor substrate than the plurality of conductive patterns, and an insulating spacer placed between the plurality of conductive patterns and the compensation pattern.
20250201714. 3D STACKED CHIP THAT SHARES POWER RAILS (Samsung Electronics ., .)
Abstract: provided is a three-dimensionally (3d) stacked semiconductor chip architecture including a first semiconductor chip including a first wafer, a first front-end-of-line (feol) layer provided on a first side of the first wafer, a first middle-of-line (mol) layer provided on the first feol layer, a first back-end-of-line (beol) layer provided on the first mol layer, a first power rail layer provided on a second side of the first wafer, and a second semiconductor chip including a second wafer, a second feol layer provided on a first side of the second wafer, a second mol layer provided on the second feol layer, a second beol layer provided on the second mol layer, a second power rail layer provided on a second side of the second wafer, wherein the first power rail layer and the second power rail layer contact each other.
Abstract: a fingerprint sensor package includes a substrate, a controller chip on the substrate, and a molding material molding the controller chip. the substrate includes an insulating layer, a first conductive pattern layer, a second conductive pattern layer spaced apart from the first conductive pattern layer by the insulating layer, and a protective layer at least partially covering the second conductive pattern layer. the second conductive pattern layer includes a first test pad electrically coupled with a first sensing pattern of the first conductive pattern layer, a second sensing pattern intersecting the first sensing pattern on a plane, and a second test pad electrically coupled with the second sensing pattern. the first conductive pattern layer is at a level between the second conductive pattern layer and the controller chip. the first test pad and the second test pad are at least partially exposed through openings of the protective layer.
Abstract: provided are semiconductor devices, which are capable of contributing to chip size reduction and ensuring process stability, semiconductor packages including the semiconductor devices, and methods of manufacturing the semiconductor devices. the semiconductor device includes a first semiconductor chip of a first type and a second semiconductor chip of a second type having rectangular shapes with a same size, wherein the first semiconductor chip and the second semiconductor chip are included in a plurality of semiconductor chips corresponding to 1-shot in an exposure process to be adjacent to each other in a first direction, and when the first semiconductor chip and the second semiconductor chip are arranged adjacent to each other in a first direction in the 1-shot, the first semiconductor chip and the second semiconductor chip are mirror-symmetrical to each other in the 1-shot with respect to an axis in a second direction perpendicular to the first direction.
20250201745. SEMICONDUCTOR CHIP SEMICONDUCTOR PACKAGE INCLUDING SAME (Samsung Electronics ., .)
Abstract: a semiconductor chip includes a semiconductor substrate, a plurality of through vias passing through at least a portion of the semiconductor substrate, and a plurality of upper pads contacting the plurality of through vias, wherein, in a plan view, each of the plurality of upper pads surrounds a respective one of the plurality of through vias, and at least one of the plurality of upper pads has a tetragonal cross-sectional shape.
20250201749. SEMICONDUCTOR PACKAGES (Samsung Electronics ., .)
Abstract: a semiconductor package is provided. the semiconductor package includes a redistribution line that is arranged on a substrate and includes a first top surface portion, a redistribution insulating layer that is arranged on the substrate, covers the redistribution line, and includes an opening that exposes the first top surface portion of the redistribution line, an under-bump structure arranged within the opening of the redistribution insulating layer, the under-bump structure including an adhesive layer arranged on a sidewall of the opening, a seed layer arranged on the sidewall of the opening and on the first top surface portion of the redistribution line, and an under-bump metal layer arranged on the seed layer and filling the opening, and a solder layer arranged on the under-bump structure.
20250201755. SEMICONDUCTOR PACKAGE (Samsung Electronics ., .)
Abstract: a semiconductor package includes a package substrate, a stack structure on the package substrate and including a plurality of semiconductor chips stacked sequentially and offset, and a plurality of chip selection wires configured to respectively electrically connect the package substrate to the plurality of semiconductor chips of the stack structure, wherein each of the plurality of semiconductor chips includes a plurality of chip selection pads, each of the plurality of chip selection wires extends from the package substrate to one of the plurality of semiconductor chips along side and top surfaces of the stack structure, and extension lengths of the plurality of chip selection wires are different from each other.
20250201757. CHIP BONDING APPARATUS (Samsung Electronics ., .)
Abstract: a chip bonding apparatus includes a stage configured to support a plurality of substrates, a bonding head located to face an upper surface of the stage in a vertical direction and configured to hold a plurality of semiconductor chips and transmit a laser beam, and a laser irradiating unit configured to irradiate a laser beam toward the semiconductor chips, wherein a plurality of trenches are formed in a lower surface of the bonding head.
20250201762. METHOD MANUFACTURING SEMICONDUCTOR PACKAGES (Samsung Electronics ., .)
Abstract: methods of manufacturing a semiconductor package may include providing an interposer substrate having first bonding pads on a first surface thereof and second bonding pads on a second surface thereof, the second surface opposite to the first surface; forming solder bumps the first bonding pads, respectively; applying a release layer on the solder bumps; forming a porous adhesive layer on the release layer, the porous adhesive layer defining a plurality of pores therein; attaching the porous release layer onto a carrier substrate using the porous adhesive layer; placing at least one semiconductor device on the second surface of the interposer substrate, the placed at least one semiconductor device having conductive bumps disposed on the second bonding pads; and performing a reflow process on the conductive bumps to mount the at least one semiconductor device on the second surface of the interposer substrate.
20250201763. SEMICONDUCTOR PACKAGE (Samsung Electronics ., .)
Abstract: a semiconductor package includes a molded layer covering at least a portion of a chip structure and including a plurality of hollows in an upper surface thereof, an upper redistribution structure disposed on the molded layer and including a plurality of insulating layers and a plurality of upper redistribution layers respectively disposed on the plurality of insulating layers, and a plurality of posts penetrating through the molded layer and electrically connecting the lower redistribution layer to the plurality of upper redistribution layers, wherein the plurality of insulating layers include a first insulating layer between the first upper redistribution layer and the molded layer, and the first insulating layer includes a first sub-layer covering the upper surface of the molded layer and an upper surface of each of the plurality of posts and including protruding portions filling the plurality of hollows and openings exposing at least a portion of the upper surface of each of the plurality of posts, and a second sub-layer covering the first sub-layer and filling the openings, wherein a first height from the upper surface of the molded layer to an upper surface of the first sub-layer is less than a second height from the upper surface of the first sub-layer to an upper surface of the second sub-layer.
20250201776. SEMICONDUCTOR PACKAGE METHOD MANUFACTURING SAME (Samsung Electronics ., .)
Abstract: a semiconductor package including: a substrate that includes a wiring line; and a 3-dimensional integrated circuit structure on the substrate, the 3-dimensional integrated circuit structure including a first die and a second die on the first die, the first die including a first capacitor structure having a defect, a second capacitor structure free of defects, and a plurality of through silicon vias connected to the second die, wherein the first capacitor structure is electrically separated from the second die, and the second capacitor structure is electrically connected to a corresponding through silicon via among the plurality of through silicon vias through the wiring line.
Abstract: a semiconductor device having a package on package (pop) structure, in which a fine pitch between package substrates is implemented, a total height of a package is reduced, and reliability is enhanced. the semiconductor package includes a first package substrate including a first body layer and a first passivation layer, a first semiconductor chip on the first package substrate, a second package substrate on the first package substrate, the second package substrate including a second body layer and a second passivation layer, a first connection member on the first package substrate outside the first semiconductor chip, and a gap filler filled between the first package substrate and the second package substrate, wherein the first package substrate includes a first trench, the second package substrate includes a second trench, and the first semiconductor chip is disposed between the first trench and the second trench.
20250201794. SEMICONDUCTOR PACKAGE (Samsung Electronics ., .)
Abstract: provided is a semiconductor package including a chip stack including first semiconductor chips, and a second semiconductor chip on an uppermost first semiconductor chip, an upper cover member on the chip stack, an intermediate insertion member between the upper cover member and the chip stack, and a dam structure on the base chip around the chip stack, the intermediate insertion member having a lower surface contacting the second semiconductor chip, an upper surface contacting the upper cover member, and a side surface between the lower surface and the upper surface, at least a portion of the side surface of the intermediate insertion member being curved, a height of the dam structure being greater than a height of the chip stack, and a thickness of the upper cover member being greater than a thickness of the first semiconductor chips and a thickness of the second semiconductor chip.
20250201795. SYSTEM METHODS MODULAR HYBRID BONDING PACKAGE ARCHITECTURE (Samsung Electronics ., .)
Abstract: disclosed herein are methods, systems and devices including a first layer with at least one transistor, a second layer on a first side of the first layer, the second layer including a signal layer. a third layer may be on a second side of the first layer, the second side opposite the first side of the first layer, and the third layer may include a power layer. a stack may be coupled to the second layer, the stack including a first device row and a second device row. each of the first device row and the second device row may include at least one device such as a computational device. the second device row may be mounted on the first device row, and the devices in the first device row may differ from the devices of the second device row.
Abstract: a sulfide solid electrolyte represented by formula 1 and a sodium all-solid secondary battery including the same:
20250202096. MOVING ROBOT (Samsung Electronics ., .)
Abstract: a moving robot includes a main body; a moving module configured to move the main body; a communication device including an antenna module arranged in a highest portion within the main body and performing wireless communication with an external device; and at least one processor configured to control the moving module based on a signal received from the external device through the communication device so that the main body moves toward the external device, wherein the antenna module includes a substrate; a first antenna arranged on an upper surface of the substrate; and a plurality of second antennas arranged on the upper surface of the substrate to be at the same distance from the first antenna.
20250202160. ELECTRONIC DEVICE COMPRISING CONNECTOR (Samsung Electronics ., .)
Abstract: an electronic device includes a first connector including a first housing including a first surface, a plurality of first terminals provided on the first surface, a first magnetic body enclosing the plurality of first terminals, and a first barrier enclosing an inner side surface of the first magnetic body, and a second connector that is connectable to the first connector and includes a second housing including a second surface, a plurality of second terminals provided on the second surface, a second magnetic body attachable to and detachable from the first magnetic body and enclosing the plurality of second terminals, and a second barrier enclosing an inner side surface of the second magnetic body.
20250202282. WIRELESS POWER TRANSMISSION DEVICE (Samsung Electronics ., .)
Abstract: a wireless power transmission device is provided. the wireless power transmission device may comprise: a housing including a front plate and a frame, surrounding at least a part of the front plate and including an edge area including a plurality of valleys and a plurality of mountains; a transmission coil arranged below the front plate; a magnetic body comprising a magnetic material, arranged below the front plate, surrounding at least a part of the transmission coil, and spaced apart from the frame; and a fan positioned below the magnetic body.
Abstract: a method may include generating, using an oscillator, a first signal having a frequency based on a current, generating, based on a second signal, a first portion of the current, the first portion of the current having a first frequency characteristic, and generating, based on the second signal, a second portion of the current, the second portion of the current having a second frequency characteristic. a gain of the first frequency characteristic may change based on a frequency of the second signal. the first frequency characteristic may include a first gain at a first frequency, and a second gain at a second frequency. the first gain may be greater than the second gain, and the second frequency may be greater than the first frequency. a phase of the first frequency characteristic may change based on a frequency of the second signal.
Abstract: an example converter includes a first adder, a first analog-to-digital converter, a second analog-to-digital converter, a digital noise coupling filter, and a digital filter. the first adder is configured to generate a differential analog signal corresponding to a difference between a first analog signal and a second analog signal. the first analog-to-digital converter is configured to convert the differential analog signal to a first digital signal. the second analog-to-digital converter is configured to convert a first quantization error corresponding to a difference between the differential analog signal and the first digital signal to a second digital signal. the digital noise coupling filter is configured to generate a second digital quantization signal corresponding to the second analog signal. the digital filter is configured to generate an output signal based on the first digital signal and the second digital signal.
Abstract: an electronic device comprises: a battery; a communication module including a first processor; and a second processor electrically connected to the battery and the communication module. the first processor detects a transmission event of a tx signal; requests voltage level information about the battery from the second processor in response to detecting the transmission event of the tx signal; and receives the voltage level information about the battery from the second processor in response to requesting the voltage level information about the battery. the communication module compensates for the transmission power level of the tx signal on the basis of the voltage level information about the battery received by the first processor.
20250202514. ELECTRONIC DEVICE METHOD CONTROLLING GROUND CIRCUIT (Samsung Electronics ., .)
Abstract: an electronic device is provided. the electronic device includes an audio module, an audio module ground circuit for the audio module, at least one antenna, at least one antenna ground circuit for the at least one antenna memory storing one or more computer programs, and one or more processors communicatively coupled to the audio module, the audio module ground circuit, the least one antenna, the least one antenna ground circuit and the memory, and wherein the one or more computer programs include computer-executable instructions that, when executed by the at least one or more processors individually or collectively, cause the electronic device to identify that the electronic device is in time division multiple access (tdma) communication or time division duplex (tdd) communication while the audio module operates, identify a transmission power in the communication based on identifying that the electronic device is in the tdma communication or the tdd communication while the audio module operates, and change a ground circuit of the audio module from the audio module ground circuit to one of the at least one antenna ground circuit in a case that the identified transmission power exceeds a threshold.
Abstract: the present disclosure relates to a 5g communication system or a 6g communication system for supporting higher data rates beyond a 4g communication system such as lte. a method by a base station comprises: determining a number of first dimensional beam groups and a number of second dimensional beam groups for reporting at least one pmi-related parameter for a plurality of two-dimensional beams; transmitting a rrc configuration message including information about the number of the first dimensional beam groups and the number of the second dimensional beam groups; and receiving reporting of the pmi-related parameter based on the rrc configuration message.
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate a post-4g communication system such as lte. a method performed by a ue in a wireless communication system includes receiving first rs-related information for the ue and second rs-related information for an interference ue that is causing nonlinearity interference to the ue, receiving a first rs based on the first rs-related information and a second rs based on the second rs-related information, obtaining first nonlinearity information for nonlinearity of a first signal that a bs transmits to the ue and second nonlinearity information for nonlinearity of a second signal that the bs transmits to the interference ue, based on the first rs and the second rs, and performing nc for a dl signal received from the bs, based on the first nonlinearity information and the second nonlinearity information.
Abstract: a method performed by a terminal in a wireless communication system is provided. the method includes receiving, from a base station, configuration information related to a sounding reference signal (srs) transmission related to a codebook-based uplink transmission, the configuration information including an srs resource set comprising an srs resource configured by four ports, and transmitting, to the base station, an srs by using three ports on the srs resource, wherein the srs transmission is not be performed with regard to a port having the largest port index among the four ports configuring the srs resource.
Abstract: a device for supporting a homomorphic encryption operation includes a ciphertext conversion circuit configured to convert first ciphertexts corresponding to a first operation size to second ciphertexts corresponding to a second operation size, different from the first operation size, to convert the operated ciphertext having the second operation size to a third ciphertexts corresponding to the first operation size, and to perform a homomorphic encryption operation on the second ciphertexts.
20250202701. METHOD APPARATUS HOMOMORPHIC ENCRYPTION OPERATION (Samsung Electronics ., .)
Abstract: a method with a number-theoretic transform (ntt) operation includes allocating an element of a matrix to a data lane such that elements in a first column of the matrix corresponding to a polynomial are allocated to the data lane of a first lane group among lane groups, wherein the matrix is a square matrix, and a number of elements comprised in the matrix is n, performing a first ntt operation on a data lane of a fourth root of the n for each of the lane groups, allocating a result of the first ntt operation to the data lane such that the matrix is transposed, based on adjustment of a reading order of a buffer that stores the result of the first ntt operation, and performing a second ntt operation on the data lane of the fourth root of the n for each of the lane groups.
Abstract: the present disclosure relates to a communication technique of fusing a 5g communication system for supporting higher data transmission rate beyond a 4g system with an iot technology and a system thereof. the system may be used for an intelligent service (for example, smart home, smart building, smart city, smart car or connected car, health care, digital education, retail business, security and safety related service, or the like) based on the 5g communication technology and the iot related technology. the present disclosure discloses a method and apparatus for inserting an index into a code block as a unit in which a channel code is executed and transmitting the same.
Abstract: an electronic device is provided. the electronic device includes at least one communication circuit, memory storing one or more computer programs, and one or more processors operably connected to the at least one communication circuit and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors is individually or collectively, cause the electronic device to, based on identification of a registration request for an external electronic device, register the external electronic device to correspond to a first area among a plurality of areas managed by the electronic device, and transmit area information related to the first area to the external electronic device via the at least one communication circuit, wherein the area information includes first information indicating whether a thread network partition is divided based on a position, and second information indicating a position of the first area.
Abstract: an electronic device includes an interface, one or more processors operatively connected the interface, and memory storing instructions. the instructions are configured to, when executed by the one or more processors individually or collectively, cause the electronic device to connect, using a wireless modem device coupled through the interface, a data session for cellular data communication, receive, via the data session, a first router advertisement (ra) message, obtain, from the first ra message, at least one lifetime for the data session, determine whether the at least one lifetime is updated until a predetermined time before expiration of the at least one lifetime, based on determining that the at least one lifetime is not updated, transmit a signal requesting an internet protocol (ip) reconfiguration, receive a second ra message based on the transmitting of the signal, and update the at least one lifetime based on the second ra message.
20250203001. OPTICAL MODULE CAGE INCLUDING METAL PAD (Samsung Electronics ., .)
Abstract: an optic cage is provided. the optic cage includes a first cage for accommodating an optical module, a second cage for supporting the optical module, and a metal pad, wherein a side of the metal pad is coupled to a side of the optical module, wherein a plurality of grooves is formed on the side of the metal pad, wherein an opening is formed on the side of the first cage, wherein a plurality of plate spring structures integrally formed with the first cage is disposed within the opening, wherein the plurality of plate spring structures is respectively coupled to a corresponding groove among the plurality of grooves, and wherein the metal pad is movably disposed by insertion of the optical module into the first cage or withdrawal of the optical module from the first cage.
20250203035. ELECTRONIC DEVICE METHOD PROVIDING SLOW SHUTTER FUNCTION (Samsung Electronics ., .)
Abstract: an electronic device is provided. the electronic device includes memory storing one or more computer programs, a camera module, and one or more processors communicatively coupled to the camera module and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors individually or collectively, cause the electronic device to acquire a plurality of consecutive images by using the camera module, perform hand shaking correction for the plurality of images, select, from the plurality of images for which hand shaking correction has been performed, first images included in a stabilization section determined based on a motion vector, determine whether shooting is daytime shooting or nighttime shooting, based on luminance components associated with the plurality of images, and generate a second image, which is a slow shutter image, by synthesizing the selected first images, based on determining that the shooting is the daytime shooting.
Abstract: a method of artefact correction of a warped image in a video see through (vst) device including a plurality of primary imaging devices and a plurality of secondary imaging devices, where the method includes: determining a location of at least one artefact and a corresponding depth map from a warped image generated from a plurality of image frames captured by the plurality of primary imaging devices; determining one or more correction parameters for the at least one artefact based on the determined location; identifying image data and corresponding depth information from at least one image frame captured by at least one of the plurality of secondary imaging devices based on the determined location of the at least one artefact and the corresponding depth map; and correcting the at least one artefact in the warped image by applying, based on the correction parameters, the image data to the warped image.
Abstract: an electronic device may include a base panel, an optical layer, a front panel, a user tracking sensor configured to obtain a viewing angle of a user, a memory, and a processor(s) configured to execute at least one instruction stored in the memory, wherein the processor(s) may be configured to obtain an input image including a plurality of view images, generate a base image by decomposing the input image by using a base image generation model, generate a front image corresponding to a viewing angle of the user by decomposing the input image by using a front image generation model, based on view characteristic information of the base panel which corresponds to the viewing angle of the user, view characteristic information of the front panel which corresponds to the viewing angle of the user, and characteristic information of the optical layer, and provide the image to the user by displaying the base image on the base panel and displaying the front image on the front panel.
20250203085. ENCODING DEVICE OPERATION METHOD ENCODING DEVICE (Samsung Electronics ., .)
Abstract: an encoding device may include a quantization controller configured to generate, for each of basic blocks constituting image data, quantization parameters for each of a plurality of sample blocks for partitioning the basic blocks, and a quantizer configured to quantize the image data based on at least one of the quantization parameters, wherein the quantization controller is further configured to generate initial quantization offsets corresponding to preliminary blocks generated by partitioning the image data according to each of the plurality of sample blocks, generate final quantization offsets corresponding to the preliminary blocks by adjusting the initial quantization offsets to be included in offset ranges corresponding to the preliminary blocks, respectively, wherein the offset ranges are set based on sizes of the preliminary blocks, respectively, and generate the quantization parameters based on the final quantization offsets.
Abstract: provided is a video decoding method including: determining a prediction mode of a current block to be one of a skip mode and a merge mode; when a motion vector, which is determined from a merge candidate list of the current block, and a merge motion vector difference are to be used, obtaining merge candidate information indicating one candidate in the merge candidate list by performing entropy encoding on a bitstream by applying one piece of context information; determining a base motion vector from one candidate determined from the merge candidate list, based on the merge candidate information; and determining a motion vector of the current block by using a distance index of a merge motion vector difference of the current block and a direction index of the merge motion vector difference to use the base motion vector and the merge motion vector difference.
Abstract: the disclosure relates to an artificial intelligence (ai) system that simulates a function, such as cognition and judgment, of a human brain using a machine learning algorithm, such as deep learning, and an application thereof. according to an embodiment, an electronic device may include a touchscreen, a camera, a memory, and a processor, wherein the processor may receive information about an image capturing situation from a user, may obtain a target image based on the information about the image capturing situation using a first artificial intelligence module stored in the memory, may obtain feature information included in the target image using a second artificial intelligence module stored in the memory, may store the feature information in the memory, and may store an image related to the feature information in the memory based on obtaining the image related to the feature information through the camera.
Abstract: an electronic device is provided. the electronic device includes a housing, a plurality of cameras exposed to an outside through a surface of the housing, a flexible display configured to be inserted into the housing and extracted from the housing, a sensor configured to detect a size of a displaying area of the flexible display extracted from the housing, memory storing one or more computer programs, and one or more processors communicatively coupled to the plurality of cameras, the flexible display, the sensor, and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors individually or collectively, cause the electronic device to display, in the displaying area of the flexible display having a first size, a preview image based on a first camera having a first field-of-view (fov) corresponding to the first size among the plurality of cameras, in response to an input modifying the size of the displaying area from the first size to a second size different from the first size, identify the size of the displaying area by using the sensor, activate, in a state in which the size of the displaying area is modified based on the input, a second camera having a second fov corresponding to a second size among the plurality of cameras, based on identifying that a difference between the first size of the displaying area and the second size is less than or equal to a preset difference by using the sensor, and based on identifying that the first size of the displaying area is modified to the second size by the input, display the preview image based on the activated second camera among the first camera and the second camera.
20250203231. METHOD READING DATA IMAGE SENSOR, IMAGE SENSOR THEREFOR (Samsung Electronics ., .)
Abstract: an electronic device may include an image sensor and an image signal processor. the image sensor may include a pixel array including a plurality of pixels configured to detect light; a row driver configured to select a row of a pixel to be driven from among the plurality of pixels in the pixel array; and a column driver configured to select a column of a pixel to be driven from among the plurality of pixels in the pixel array, the image sensor is configured to: read out a pixel value, based on a designated pixel pattern, by operation of the row driver and the column driver, and output, to the image signal processor, image data acquired based on the pixel value, and the designated pixel pattern includes pixels located in a plurality of rows and a plurality of columns of the pixel array.
20250203243. IMAGE SENSOR CAMERA MODULE INCLUDING SAME (Samsung Electronics ., .)
Abstract: an image sensor, and a camera module that includes the image sensor, the image sensor including a plurality of pixels. each of the plurality of pixels includes a photodiode that generates an electric charge based on a received optical signal and a plurality of taps. each of the plurality of taps includes a transfer transistor, a floating diffusion node, a first source follower, a first switch, a second switch, a first capacitor, and a second source follower.
20250203246. IMAGE SENSOR DRIVING METHOD THEREOF (Samsung Electronics ., .)
Abstract: an image sensor comprising a pixel that includes a photoelectric element configured to generate photo charges, a driving transistor configured to generate a pixel signal based on voltage of a first node connected to the photoelectric element, a charge storage element connected to the photoelectric element and configured to store the photo charges, a second transmission transistor connected between the first node and a second node, a first transmission transistor connected between the second node and the photoelectric element, and a first switch transistor connected between the second node and the charge storage element, and a row driver connected to the pixel and configured to control the pixel.
20250203279. ELECTRONIC APPARATUS CONTROLLING METHOD THEREOF (Samsung Electronics ., .)
Abstract: an electronic apparatus including: a speaker; a microphone; and at least one processor, wherein the at least one processor is configured to identify a candidate region having a critical area or more area than the critical area in map data related to a space where the electronic apparatus is located, move the electronic apparatus to a representative location of the candidate region and output an audio signal through the speaker, acquire a reverberation time of the audio signal at a plurality of locations including the representative location in the candidate region based on a recorded audio signal corresponding to the audio signal and acquired through the microphone, and identify, as a target location, a location from which a longest reverberation time is acquired among the plurality of locations.
Abstract: an electronic device including at least one speaker, a communication interface, and at least one processor that is connected with the at least one speaker and the communication interface and controls the electronic device. the processor, when the electronic device is in a first mode, may output one or more first channel signals included in a sound via at least one speaker and control the communication interface to transmit one or more second channel signals in the sound to at least one external speaker, and when the electronic device is in a second mode, mix at least one of the one or more first channel signals and the one or more second channel signals to thereby produce a mixed signal and control the communication interface to transmit the mixed signal to the at least one external speaker.
Abstract: an electronic device is provided. the electronic device includes at least one microphone, at least one speaker, a display, memory storing one or more computer programs, and one or more processors communicatively coupled to the microphone, the speaker, the display, and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors individually or collectively, cause the electronic device to output a reference sound through the at least one speaker in response to reception of a user request for capturing video, obtain an acoustic signal corresponding to the reference sound through the at least one microphone, analyze the obtained acoustic signal, and display information on a normal or abnormal recording state on at least a portion of the display based on a result of the analysis of the obtained acoustic signal.
20250203333. COMPUTING DEVICE METHOD CONTROLLING TARGET DEVICE (Samsung Electronics ., .)
Abstract: a method of controlling a target device by a computing device may include identifying a distance difference between a distance to a first reference device and a distance to a second reference device from one or more electronic devices, identifying an angle difference between an angle of arrival of the one or more electronic devices relative to at least one of the first reference device or the second reference device and a reference angle of arrival, and controlling the target device based on at least one of the distance difference or the angle difference.
20250203343. ELECTRODE DEVICE METHOD SUBSCRIPTION PROCEDURE (Samsung Electronics ., .)
Abstract: the disclosure relates to a 5generation (5g) or pre-5g communication system for supporting a data transmission rate higher than that of a 4generation (4g) communication system, such as long term evolution (lte). an apparatus configured to perform functions of an e2 node is provided. the apparatus includes at least one transceiver, memory storing one or more computer programs, and one or more processors communicatively coupled to the at least one transceiver and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors of the apparatus individually or collectively, cause the apparatus to receive, from a near-real-time (near-rt) radio access network (ran) intelligent controller (ric), an ric subscription request message, and transmit, to the near-rt ric, an ric subscription response message, wherein the ric subscription request message includes a ran function list information element (ie) for indicating one or more ran functions.
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. a method performed by a target device is provided. the method comprises detecting a request to transfer an e-sim from a source device to the target device, wherein the source device and the target device are associated with a common oem entity; and receiving from a mno entity, a new profile for the e-sim for download and activation at the target device, thereby completing the transfer of the e-sim, wherein a determination that the target device is prior to the source device is performed by the common oem entity, and wherein a first transaction indicative of a request to generate the new profile for the e-sim for the target device and deletion of the e-sim from the source device is triggered by the common oem entity upon the determination.
20250203355. ELECTRONIC APPARATUS METHOD CONTROLLING THEREOF (Samsung Electronics ., .)
Abstract: an electronic apparatus includes: a communication device; at least one memory storing key information; and at least one processor configured to perform a registration procedure of the electronic apparatus by using acquired onboarding information in case of acquiring the onboarding information, wherein the at least one processor is configured to check other electronic apparatuses having the key information based on the key information, and control the communication device to transmit the acquired onboarding information to another electronic apparatus that has yet to be onboarded among the checked other electronic apparatuses.
20250203375. ELECTRONIC DEVICE CONTROL METHOD THEREFOR (Samsung Electronics ., .)
Abstract: an electronic device is provided. the electronic device includes a communication interface, memory storing one or more computer programs, and one or more processors communicatively coupled to the communication interface and the memory, wherein the one or more computer programs include computer-executable instructions that, when executed by the one or more processors individually or collectively, cause the electronic device to identify, based on a signal for a secure connection being received from an external device, a received signal strength indicator (rssi) value of a received signal, transmit, based on a speaker being identified as comprised in the external device based on function information of the external device comprised in the received signal, feedback information to the external device through the communication interface based on the identified rssi value, and perform, based on an updated signal being received from the external device based on the feedback information, the secure connection with the external device based on the updated signal.
Abstract: the present disclosure relates to a 5g or 6g communication system for supporting higher data transmission rates. according to various embodiments, a method performed by a network slice subnet management function (nssmf) node in a wireless communication system may comprise: receiving a request message including a tracking area code (tac) list for network slice generation from a network slice management function (nsmf) node, wherein the tac list corresponds to information on a specific area related to network slice generation; determining at least one tac corresponding to a tac supported by the nssmf node among tacs included in the tac list; and transmitting, to the nsmf node, a response message including information on the determined at least one tac.
20250203434. BEAM REPORTING WIRELESS COMMUNICATION SYSTEM (Samsung Electronics ., .)
Abstract: a user equipment (ue) includes a processor, and a transceiver operatively coupled to the processor. the transceiver is configured to transmit, to a base station (bs), a message indicating a ue initiated beam reporting capability, and receive, from the bs, a ue initiated beam reporting configuration for at least one cell, the ue initiated beam reporting configuration including a list of at least one candidate reference signals (rss). the transceiver is also configured to receive, from the bs, a message including a configuration for a counter threshold and a beam reporting trigger timer, and transmit, to the bs, a ue initiated beam report.
20250203446. PEER-TO-PEER RESOURCE MANAGEMENT WLAN (Samsung Electronics ., .)
Abstract: a first station (sta) in a wireless network transmits, to an access point (ap), a stream classification service (scs) request for itself and on behalf of a second sta. the first sta receives, from the ap, a first scs response for the scs request for the first sta and a second scs response for the scs request for the second sta. the first sta or the second sta may receive a trigger frame granting a transmission opportunity (txop) via the ap, if the ap accepts the scs request associated with that sta. subsequently, the first sta or the second sta that receives the trigger frame may perform communication with the ap.
20250203481. QOS MANAGEMENT WIRELESS NETWORK (Samsung Electronics ., .)
Abstract: a station (sta) in a wireless network that is configured to transfer an established stream classification service (scs) agreement with an access point (ap) to a different ap while roaming, including transmitting a frame that causes the transfer to an ap, receiving a response from the ap regarding whether the transfer to the different ap has been accepted, declined, or conditionally accepted with a set of alternative parameters for the scs agreement, and the sta seamlessly roaming to the different ap while maintaining the established scs agreement for the network traffic and without having to establish a new scs agreement.
Abstract: the present disclosure provides a method for managing master cell group (mcg) failure by a user equipment (ue) supporting a dual connectivity in a wireless communication system. the method comprises establishing a radio resource control (rrc) connection with an mcg and a secondary cell group (scg). the method comprises detecting a failure of the rrc connection with the mcg. the method comprises transmitting, to a network corresponding to the scg, a connection failure report upon detecting the failure of the rrc connection with the mcg. the method comprises receiving, from the network corresponding to the scg, rrc reconfiguration information in response to the transmitted connection failure report, wherein the rrc reconfiguration information includes information about configuring the scg as the mcg.
Abstract: an electronic device is provided. the electronic device may comprise: a display, a communication circuit configured for bluetooth low energy (ble), and at least one processor comprising processing circuitry. at least one processor, individually and/or collectively, may be configured to: resolve, at least partly based on an event for initiating a second service, a resolvable private address (rpa) within an advertising packet for a first service using an identity resolving key (irk) among multiple irks stored in the electronic device before occurrence of the event, the rpa being received through the communication circuit; and in response to the resolving, control the display to display within a user interface for the second service, a state of a visual object indicating an external electronic device corresponding to the irk as a candidate electronic device for providing the second service, together with the electronic device.
Abstract: the present disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. in addition, the present disclosure provides a method and a device for reducing energy consumption of a base station in a mobile communication system. according to the present disclosure, an excessive energy consumption problem of a base station in a mobile communication system is resolved, and higher energy efficiency can be achieved. the method performed by a base station in a communication system, according to one embodiment of the present disclosure, may comprise the steps of: determining a conversion from a first state to a second state; transmitting, to a terminal, first state conversion information indicating the conversion from the first state to the second state; converting the state of the base station from the first state to the second state; and performing communication with the terminal on the basis of the second state.
20250203512. POWER SAVING OPERATIONS ACCESS POINTS (Samsung Electronics ., .)
Abstract: an access point (ap) in a wireless network, comprising a memory and a processor coupled to the memory, the processor configured to: establish a power saving schedule in a basic service set (bss), wherein the power saving schedule includes one or more unavailable periods during which the ap is not available for frame exchange; transmit, to one or more stations stas, a first frame that includes power saving schedule information; exchange, with the one or more stas, one or more frames during a period that does not belong to the power saving schedule; and transition to a power saving mode during the one or more unavailable periods based on the power saving schedule.
20250203530. METHOD ELECTRONIC DEVICE TUNING ANTENNA (Samsung Electronics ., .)
Abstract: an antenna tuning method, an antenna tuning device, an electronic apparatus, and/or a related storage medium may be provided. the antenna tuning method may include: determining a maximum and/or high radiated power of an antenna in response to detecting an abnormality of a transmitting state of the antenna; determining a headroom condition of the maximum and/or high radiated power for a current service type based on network parameters; determining a target receiving power based on the headroom condition; determining a tuning parameter corresponding to the target receiving power as a tuning parameter of the antenna.
20250203531. ELECTRONIC DEVICE TAS CONTROL METHOD (Samsung Electronics ., .)
Abstract: disclosed is an electronic device including a plurality of communication processors comprising a first communication processor and a second communication processor. the electronic device performs a plurality of operations including obtaining a transmission power history of the second communication processor at a time point of a state change of the first communication processor, and identifying, based on the transmission power history, a transient time-averaged specific absorption rate backoff regulation value of the first communication processor for a time window associated with the time point of the state change.
Abstract: an electronic device in a high speed train-single frequency network (hst-sfn) scenario includes processing circuitry configured to receive a first downlink signal from a serving base station (bs) and a second downlink signal from a neighboring bs, the second downlink signal being the same as the first downlink signal, and the first and second downlink signal being transmitted in an sfn scheme, receive a first synchronization signal (ss) from the serving bs and a second ss from the neighboring bs, the second ss being different from the first ss, and the first ss and the second ss being transmitted in a non-sfn scheme, obtain a first power delay profile (pdp) based on the first ss, obtain a second pdp based on the second ss, calculate an effective pdp based on the first pdp and the second pdp, and generate a weight matrix (wm) based on the effective pdp.
20250203620. UE-INITIATED REPORTING (Samsung Electronics ., .)
Abstract: methods and apparatuses for user equipment (ue)-initiated reporting. a method performed by a user equipment (ue) includes receiving first information indicating one or more sets of physical uplink control channel (pucch) resources in a pucch-config and receiving second information related to one or more first pucch resources for transmitting a x-bit indicator to indicate transmission of a beam report. each of the one or more sets is associated with a pucch-resource setid. x≥1. the method further includes determining, based at least on a value of x, a first set of pucch resources from the one or more sets to use for transmitting the indicator, determining, based on the first set of pucch resources and the second information, a first pucch resource to transmit the indicator, and transmitting, via the first pucch resource, the indicator.
20250203625. MULTI-CELL SCHEDULING REDUCED CONTROL OVERHEAD (Samsung Electronics ., .)
Abstract: methods and apparatuses for multi-cell scheduling with reduced control overhead. a method for receiving physical downlink control channels (pdcchs) includes receiving information for a first group of n1 cells and for a second group of n2 cells, determining a total number of pdcch receptions in a slot on a scheduling cell based on n1 and on a ratio of n2 over m, and receiving a number of pdcchs in the slot on the scheduling cell that is not larger than the total number. a pdcch provides a downlink control information (dci) format. the dci format schedules one of: a physical downlink shared channel (pdsch) reception, or a physical uplink shared channel (pusch) transmission, on one cell from the first group of n1 cells, or pdsch receptions, or pusch transmissions, on a number of cells up to a maximum of m cells from the second group of n2 cells.
20250203649. METHOD COMMUNICATION COMMUNICATION SYSTEM APPARATUS THEREOF (Samsung Electronics ., .)
Abstract: the disclosure relates to a 5g or 6g communication system for supporting a higher data transmission rate. embodiments of the disclosure provide a communication method, a user equipment, a base station, and a storage medium. the method includes: determining at least two kinds of periods of a signal; and receiving or transmitting the signal based on the at least two kinds of periods. embodiments of the disclosure can reduce a proportion of periodic signals, thereby reducing power consumption of a communication base station.
Abstract: an operating method of a first apparatus communicating with a second apparatus in a wireless network includes: receiving, from the second apparatus, a trigger frame including information about a random access frequency band and information about an intermediate transmission time, and transmitting a physical layer convergence procedure (plcp) service data unit (psdu) including a short training field (stf) and first data to the second apparatus through the random access frequency band at the intermediate transmission time, wherein the intermediate transmission time is in a physical layer protocol data unit (ppdu) transmission period.
20250203762. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: provided is a semiconductor device including a semiconductor chip including a substrate, the substrate extending along a plane; a plurality of coolant chambers spaced apart from the substrate at a certain distance in a first direction, each coolant chamber of the plurality of coolant chambers being configured to accommodate a coolant, the first direction being perpendicular to the plane; a plurality of nozzles respectively provided on or below the plurality of coolant chambers and configured to spray the coolant toward the substrate; and a plurality of actuators respectively provided on the plurality of coolant chambers and configured to individually adjust internal pressures of the plurality of coolant chambers.
20250203792. HINGE STRUCTURE ELECTRONIC DEVICE COMPRISING SAME (Samsung Electronics ., .)
Abstract: an electronic device includes: a first housing; a second housing configured to be rotated relative to the first housing; at least one hinge structure between the first housing and the second housing and rotatably connecting the first housing and the second housing; and a flexible display on the first housing and the second housing, wherein the at least one hinge structure includes: a first rotation cam member coupled to the first housing and including a first rotation shaft and first magnetic members adjacent to the first rotation shaft; a second rotation cam member coupled to the second housing and including a second rotation shaft and second magnetic members adjacent to the second rotation shaft; and at least one hinge bracket configured to rotatably support the first rotation shaft and the second rotation shaft, and including at least one facing portion facing the first magnetic members and the second magnetic members.
20250203793. ELECTRONIC DEVICE COMPRISING HINGE ASSEMBLY (Samsung Electronics ., .)
Abstract: according to an embodiment of the present disclosure, an electronic device may comprise: first and second housings which are coupled pivotally about at least one folding axis between folded and unfolded states; a hinge assembly including a hinge which pivotally connects the first and second housings to each other; a flexible display including a first display area disposed on one surface of the first housing, a second display area disposed on one surface of the second housing, and a folding area connecting the first and second display areas to each other and arranged to correspond to at least a part of the hinge assembly; and a hinge cover disposed between the first and second housings and configured to be hidden or exposed according to pivoting of the second housing. in an embodiment, the hinge assembly may comprise: a first rotating portion configured to rotate about a first rotational axis; and a second rotating portion rotatably connected to the first rotating portion and configured to be rotated about a second rotational axis, wherein the first rotating portion supports at least a part of the folding area in the unfolded state, and a space in which the folding area is accommodated is provided in the folded state.
20250203794. HINGE MODULE ELECTRONIC DEVICE COMPRISING SAME (Samsung Electronics ., .)
Abstract: an embodiment of the present disclosure may provide an electronic device including a hinge module. the electronic device may include a hinge module including: a rotating member connected to a housing; a first arm member including one end which includes a first cam structure and the other end which includes a first protrusion formed therefrom; a second arm member including one end which includes a second cam structure and the other end which includes a second protrusion formed therefrom; and a guide member connected to the rotating member and including a first surface having a first rail in which the first protrusion of the first arm member is accommodated, and a second surface including a second rail in which the second protrusion of the second arm member is accommodated. in some aspects, various embodiments may be applied.
20250203836. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: a semiconductor device includes a lower interlayer insulating layer, an insulating pattern extending in a first horizontal direction, a first plurality of lower nanosheets and a second plurality of lower nanosheets, a first plurality of middle nanosheets and a second plurality of middle nanosheets, a first plurality of upper nanosheets and a second plurality of upper nanosheets. the semiconductor device includes a first stack separation layer, a second stack separation layer, a first gate electrode, a second gate electrode, a first middle source/drain region, a second middle source/drain region, and a middle source/drain contact. the middle source/drain contact is electrically connected to the first and second middle source/drain regions and penetrates the lower interlayer insulating layer and the insulating pattern in a vertical direction. an upper surface of the middle source/drain contact is formed lower than a bottom surface of a lowermost nanosheet of the first plurality of upper nanosheets.
Abstract: provided are a vertical-channel cell array transistor structure and a dynamic random-access memory (dram) device including the same. the vertical-channel cell array transistor structure includes a semiconductor substrate, a plurality of channels arranged in an array on the semiconductor substrate and each extending perpendicularly from the semiconductor substrate, a gate insulating layer on the plurality of channels, a plurality of word lines on the semiconductor substrate and extending in a first direction, and a two-dimensional (2d) material layer on at least one surface of each of the plurality of word lines.
20250203847. SEMICONDUCTOR MEMORY DEVICES METHODS FABRICATING SAME (Samsung Electronics ., .)
Abstract: a semiconductor memory device includes a substrate including: a first active pattern, a second active pattern, and a third active pattern; a bit line on the second active pattern; a first contact, at least a portion of the first contact being disposed on the first active pattern; and a second contact, at least a portion of the second contact being disposed on the third active pattern. the first active pattern includes a first recessed top surface that is in contact with the first contact. the third active pattern includes a second recessed top surface that is in contact with the second contact. a lowermost portion of the first recessed top surface of the first active pattern is disposed lower than a lowermost portion of the second recessed top surface of the third active pattern.
20250203849. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: the disclosure relates to a semiconductor device including a substrate, a lower insulation layer above the substrate, a bit line above the lower insulation layer and extending parallel to the substrate in a first direction, a first insulating pattern above the bit line and extending in a second direction intersecting the first direction, a channel pattern electrically connected to the bit line and covering the side of the first insulating pattern, a word line extending in the second direction and spaced apart from the channel pattern, a gate insulating pattern between the channel pattern and the word line, a second insulating pattern above the word line, the gate insulating pattern, and the first insulating pattern, and a landing pad electrically connected to the channel pattern, wherein a part of the word line is between a plurality of bit lines arranged spaced apart in the second direction.
20250203850. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: a semiconductor device may include a bit line structure extending in a first direction, a channel layer on the bit line structure, a gate structure on the bit line structure and extending in a second direction crossing the first direction, and a data storage structure electrically connected to the channel layer. the bit line structure may include a first side surface and a second side surface that are parallel to the first direction, and the channel layer may include a first side surface and a second side surface that are parallel to the first direction. the first side surface of the bit line structure may be coplanar with the first side surface of the channel layer, and the second side surface of the bit line structure may be coplanar with the second side surface of the channel layer.
20250203852. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: a semiconductor device may include a lower stack including a first lower word line, a first lower channel layer at least partially surrounded by the first lower word line, and a lower data storing structure connected to the first lower channel layer, an interlayer insulating layer on the lower stack, and an upper stack on the interlayer insulating layer, the upper stack including an upper word line, an upper channel layer at least partially surrounded by the upper word line, and an upper data storing structure connected to the upper channel layer, a lower connection contact on the first lower word line, a conductive connection line on the lower connection contact, and a penetration contact on the conductive connection line.
20250203853. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: a semiconductor device includes a substrate, word lines stacked on the substrate, bit lines at one side of the word lines and extending in a vertical direction, capacitor structures at another side of the word lines facing the one side of the word lines and extending in a first horizontal direction, first horizontal extensions extending in the first horizontal direction and stacked on the substrate, and second horizontal extensions connected to the first horizontal extensions, respectively, wherein a group of word lines at a certain vertical level from among the word lines are connected to one first horizontal extension at a same vertical level as the group of word lines from among the first horizontal extensions, and a word line contact is on one second horizontal extension from among the second horizontal extensions.
20250203854. INTEGRATED CIRCUIT DEVICE (Samsung Electronics ., .)
Abstract: an integrated circuit device includes a substrate having a cell array area and a peripheral circuit area including a core area, a plurality of cell conductive patterns at a reference vertical level in the cell array area on the substrate, wiring patterns at the reference vertical level in the peripheral circuit area, a capacitor structure including lower electrodes respectively connected to the cell conductive patterns in the cell array area, a middle wiring pattern at a first vertical level in the peripheral circuit area, a cell protective insulating liner covering a top surface of each of the cell conductive patterns in the cell array area, and a peripheral protective insulating liner covering a surface of the middle wiring pattern in the peripheral circuit area, wherein at least a portion of the peripheral protective insulating liner has a thickness greater than a thickness of the cell protective insulating liner.
20250203855. SEMICONDUCTOR DEVICES (Samsung Electronics ., .)
Abstract: a semiconductor device includes an integrated circuit structure including conductive regions; a capacitor including first electrode structures electrically connected to the conductive regions of the integrated circuit structure, a dielectric layer on the first electrode structures, and a second electrode structure on the dielectric layer; an insulating blocking layer on at least a portion of a surface of the second electrode structure; and an interconnection region on the insulating blocking layer and including a conductive pattern and an insulating structure, wherein the insulating structure includes etch stop layers and interlayer insulating layers that are stacked with one another, wherein at least one of the interlayer insulating layers includes hydrogen, and wherein the insulating blocking layer includes a different material from the etch stop layers.
20250203861. SEMICONDUCTOR DEVICES ELECTRONIC SYSTEMS INCLUDING SAME (Samsung Electronics ., .)
Abstract: disclosed are a semiconductor device and an electronic system including the same. the semiconductor device may include a peripheral circuit structure including peripheral circuits that are on a semiconductor substrate, and first bonding pads that are electrically connected to the peripheral circuits, and a cell array structure including a memory cell array including memory cells that are three-dimensionally arranged on a semiconductor layer, and second bonding pads that are electrically connected to the memory cell array and are coupled to the first bonding pads. the cell array structure may include a resistor pattern positioned at the same level as the semiconductor layer, a stack including insulating layers and electrodes that are vertically and alternately stacked on the semiconductor layer, and vertical structures penetrating the stack.
20250203871. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: a semiconductor device may include a substrate, a doped region on the substrate, a gate structure on the substrate, an insulating layer covering the gate structure and the doped region, a first contact extending through the insulating layer and connected to the gate structure, and a first film formation inhibition pattern disposed between the gate structure and the first contact. the first film formation inhibition pattern includes a halogen element.
20250203872. METHOD MANUFACTURING SEMICONDUCTOR DEVICES (Samsung Electronics ., .)
Abstract: a method of manufacturing a semiconductor device includes forming a memory stack on a cell wafer, the cell wafer having a first crystal orientation and including a silicon single crystal wafer and a first notch, forming a peripheral circuit stack on a peripheral circuit wafer, the peripheral circuit wafer including a silicon single crystal wafer and having a second crystal orientation different from the first crystal orientation, and bonding the cell wafer to the peripheral circuit wafer such that the memory stack and the peripheral circuit stack come into contact with each other, wherein the first crystal orientation is expressed as {first surface orientation}<first notch direction>, and the first crystal orientation includes any one of {110}<100>, {110}<112>, {111}<110>, and {111}<112>.
20250203873. SEMICONDUCTOR DEVICE INCLUDING VERTICAL CHANNEL (Samsung Electronics ., .)
Abstract: a semiconductor device is provided, including a peripheral circuit structure, and a cell structure on the peripheral circuit structure and including a cell region and a connection region. the cell structure includes gate electrodes and mold insulating layers alternately in a first direction in the cell region and the connection region, a channel structure penetrating through the gate electrodes and extending in the first direction, a cell plug contacting a first gate electrode among the gate electrodes in the connection region and penetrating through second gate electrodes below the first gate electrode among the gate electrodes, and insulating spacers on a sidewall of the cell plug and spaced apart from each other in the first direction, each of the insulating spacers between each of the second gate electrodes and the sidewall of the cell plug.
Abstract: a magnetic memory device including a tunneling magnetoresistance layer and a memory device including the magnetic memory device are provided. the magnetic memory device includes the tunneling magnetoresistance layer, including a free layer, a tunneling barrier layer, and a pinned layer, and a spin orbit torque (sot) layer configured to provide a spin current to change a magnetization direction of the free layer of the tunneling magnetoresistance layer, wherein the sot layer includes an orbital hall conductance (ohc) material layer configured to provide an orbital hall current and a conversion layer configured to convert the orbital hall current of the ohc material layer into the spin current, and the ohc material layer includes at least one material of iridium (ir), manganese (mn), vanadium (v), chromium (cr), niobium (nb), molybdenum (mo), ruthenium (ru), tantalum (ta), tungsten (w), and rhenium (re), or an alloy thereof.
Abstract: disclosed are a memory device including a vertical stack structure, a method of manufacturing the same, and/or an electronic device including the memory device. the memory device including a vertical stack structure includes an oxygen scavenger layer on a base substrate, a recording material layer on the oxygen scavenger layer and in direct contact with the oxygen scavenger layer, a channel layer on the recording material layer, a gate insulating layer on the channel layer, and a gate electrode on the gate insulating layer. the oxygen scavenger layer includes an element that forms oxygen vacancies in the recording material layer and does not include oxygen.
Abstract: a vertical non-volatile memory device may include a plurality of memory cell strings arranged two-dimensionally. each of the plurality of memory cell strings may include a channel layer extending in a first direction, a plurality of gate electrodes and a plurality of spacers alternately arranged in the first direction and each extending in a second direction, a gate insulating film extending in the first direction and between the channel layer and the plurality of gate electrodes, and a resistance change layer extending in the first direction along a surface of the channel layer. the second direction may cross the first direction. a material in the resistance change layer may be capable of switching between a first state having a first threshold voltage and a second state having a second threshold voltage. the second threshold voltage may be greater than the first threshold voltage.
Abstract: provided are multilayer metal-insulator-metal (mim) capacitors and methods for forming such capacitors. a mim capacitor includes a first metal layer of a first metal type on a first substrate layer, a semiconductor layer on the first metal layer, a second metal layer of the first metal type on the semiconductor layer, and a first photoresist and a second photoresist applied to the second metal layer, where the first metal layer, the semiconductor layer, and the second metal layer are formed via thin-film deposition, and rows of the first metal layer, the semiconductor layer, and the second metal layer are formed based on etching exposed portions of the first metal layer, the semiconductor layer, and the second metal layer between the first photoresist and the second photoresist.
Abstract: provided is a semiconductor package including a silicon substrate including a through-silicon via, a first build-up layer on a first surface of the silicon substrate, a second build-up layer on a second surface of the silicon substrate, and at least one integrated stack capacitor included in at least one of the silicon substrate, the first build-up layer, and the second build-up layer.
20250203911. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: a semiconductor device includes a channel layer; a barrier layer disposed on the channel layer, and including a material with an energy band gap different from that of the channel layer; a gate electrode disposed above the barrier layer, and extending in a first direction; a gate semiconductor layer disposed between the barrier layer and the gate electrode; a source electrode and a drain electrode, respectively disposed on opposite sides of the gate electrode in a second direction intersecting the first direction, each extending in the first direction and connected to the channel layer; a source bus line disposed on the source electrode and the drain electrode, and connected to the source electrode; and a drain bus line spaced apart from the source bus line, wherein each of the source bus line and the drain bus line includes a body portion extending in the second direction, and a plurality of protrusion parts protruding from the body portion in the first direction, each having a width reduced as the protrusion part is further away from the body portion.
20250203914. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: a semiconductor device includes a superlattice layer, a high-resistance layer on the superlattice layer and doped with a first material and a second material different from the first material, a channel layer on the high-resistance layer, a barrier layer on the channel layer and including a material having an energy band gap different from that of the channel layer, a gate electrode on the barrier layer, a gate semiconductor layer between the barrier layer and the gate electrode, and a source electrode and a drain electrode positioned on respective sides of the gate electrode and connected to the channel layer. the high-resistance layer includes a first region in which a concentration of the second material is constant, and a second region, on the first region, in which a concentration of the second material decreases in a direction away from a lower surface of the high-resistance layer.
20250203929. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: a semiconductor device includes a first active pattern that extends in a first direction, a second active pattern spaced apart from the first active pattern in a second direction that crosses the first direction, a first source/drain pattern disposed on the first active pattern, a second source/drain pattern disposed on the second active pattern, a first active contact electrically connected to the first source/drain pattern, a second active contact electrically connected to the second source/drain pattern, and an insulating structure disposed between the first and second active contacts. the insulating structure includes a first insulating layer and a second insulating layer disposed on the first insulating layer, and each of the first and second insulating layers are in contact with the first and second active contacts.
20250203930. INTEGRATED CIRCUIT DEVICE (Samsung Electronics ., .)
Abstract: the present disclosure provides an integrated circuit device including a plurality of device isolation films, a plurality of gate lines disposed on the plurality of device isolation films, a first source/drain region and a second source/drain region respectively disposed between the plurality of gate lines, wherein each of the first source/drain region and the second source/drain region includes a source/drain barrier layer, a source/drain body layer on the source/drain barrier layer, and a source/drain capping layer on the source/drain body layer, wherein a doping concentration of the source/drain capping layer is greater than a doping concentration of the source/drain body layer, the doping concentration of the source/drain body layer is greater than a doping concentration of the source/drain barrier layer, and the source/drain capping layer includes a pointed portion.
20250203954. POWER SEMICONDUCTOR DEVICES (Samsung Electronics ., .)
Abstract: a power semiconductor device includes a substrate; a drift layer on the substrate; a well region extending from an upper surface of the drift layer into the drift layer; a source region extending from an upper surface of the well region into the well region; a gate electrode on the drift layer and the well region; a gate insulating layer between the gate electrode and the well region; an isolation insulating layer in an isolation trench extending from the upper surface of the drift layer into the drift layer below the gate electrode; a dielectric layer covering the gate electrode and the source region; and a drain electrode on a lower surface of the substrate. the gate insulating layer, the isolation insulating layer, and the dielectric layer are configured to apply tensile stress to at least a portion of the well region.
20250203965. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: a semiconductor device is provided. the semiconductor device comprising a first fin pattern and a second fin pattern which are separated by a first isolation trench and extend in a first direction, a third fin pattern which is spaced apart from the first fin pattern in a second direction intersecting the first direction and extends in the first direction, a fourth fin pattern which is separated from the third fin pattern by a second isolation trench, a first gate structure which intersects the first fin pattern and has a portion extending along an upper surface of the first fin pattern, a second gate structure which intersects the second fin pattern and has a portion extending along an upper surface of the second fin pattern and a first element isolation structure which fills the second isolation trench and faces a short side of the first gate structure.
Abstract: a semiconductor device includes: a substrate; a power distribution network layer disposed on a first surface of the substrate; a source/drain pattern disposed on the substrate; a backside conductive structure configured to penetrate the substrate and to electrically connect the source/drain pattern and the power distribution network layer to each other; and a remaining pattern covering a first surface of the backside conductive structure.
20250204004. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: a semiconductor device includes a substrate insulating layer. a gate structure extends in a first direction on the substrate insulating layer. a first source/drain structure and a second source/drain structure are arranged on one side of the gate structure and are spaced apart from each other in the first direction. an etch stop layer is disposed between a second peripheral source/drain region and a second molded layer of the second source/drain structure. the etch stop layer includes a material different from materials of the second peripheral source/drain region and the second molded layer. a first central source/drain region of the first source/drain structure has a first conductivity-type, and a second central source/drain region of the second source/drain structure has a second conductivity-type that is different from the first conductivity-type.
20250204030. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: a semiconductor device includes a substrate including a first active fin and a second active fin respectively extending in a first direction, the substrate having a recess between the first and second active fins, a device isolation film on the substrate, first and second gate structures on the first and second active fins, respectively, and extending in a second direction, and a field separation layer having a first portion between the first and second active fin and in the recess, and a second portion extending from both sides of the first portion in the second direction to an upper surface of the device isolation film. the recess has a bottom surface lower in a third direction intersecting the first direction and the second direction than the upper surface of the device isolation film, and a region of the upper surface of the device isolation film has a flat surface.
20250204031. INTEGRATED CIRCUIT DEVICES (Samsung Electronics ., .)
Abstract: an integrated circuit device includes substrate including a fin-type active area extending on the substrate in a first direction parallel to an upper surface of the substrate, a first gate line crossing the fin-type active area on the substrate and extending in a second direction perpendicular to the first direction, a cut gate line extending in the second direction and being spaced apart from the first gate line with a first gate cut area therebetween, a second gate line extending in the second direction and being spaced apart from the cut gate line with a second gate cut area therebetween, and a power wiring disposed on the cut gate line.
20250204038. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: a semiconductor device includes: an active pattern extending in a first direction on a substrate; a first lower source/drain pattern and a second lower source/drain pattern provided on the active pattern and spaced apart from each other in the first direction; a first upper source/drain pattern provided on the first lower source/drain pattern; a second upper source/drain pattern provided on the second lower source/drain pattern; and a gate electrode crossing the active pattern and extending in a second direction intersecting the first direction. the gate electrode includes an overlapping portion overlapping the active pattern in a third direction perpendicular to the first direction and the second direction. a length of the overlapping portion in the second direction is less than a length of the first lower source/drain pattern in the second direction.
20250204040. SEMICONDUCTOR DEVICE (Samsung Electronics ., .)
Abstract: a semiconductor device includes a substrate including a first device region and a second device region, active regions spaced apart from each other on the substrate, having a constant width, extending in a first direction parallel to an upper surface of the substrate and including a first active region and a second active region provided on the first device region and a third active region and a fourth active region provided on the second device region, a plurality of channel layers provided on the active regions and configured to be spaced apart from each other in a direction perpendicular to the upper surface of the substrate, gate structures provided on the substrate and extending to cross the active regions and the plurality of channel layers, and source/drain regions provided on the active regions on at least one side of the gate structures.
20250204067. IMAGE SENSOR INCLUDING SEPARATION STRUCTURE (Samsung Electronics ., .)
Abstract: an image sensor includes a substrate having first and second surfaces. a separation structure penetrates the substrate. photoelectric conversion device regions are spaced apart from each other in the substrate. color filters are disposed on the second surface of the substrate. microlenses are disposed on the color filters. the separation structure includes lower and upper separation patterns, first line portions that run parallel to each other, and second line portions that perpendicularly intersect the first line portions. an upper surface of the lower separation pattern or a lower surface of the upper separation pattern has a wavy or sawtooth shape. in intersecting regions in which the first line portions and the second line portions intersect, a vertical length of one of the lower separation pattern and the upper separation pattern is about 2 to 10 times greater than a vertical length of the other.
20250204069. COLOR SEPARATION ELEMENT IMAGE SENSOR INCLUDING SAME (Samsung Electronics ., .)
Abstract: provided are a color separation element and an image sensor including the same. the color separation element includes a spacer layer; and a color separation lens array, which includes at least one nano-post arranged in the spacer layer and is configured to form a phase distribution for splitting and focusing incident light according to wavelengths, wherein periodic regions in which color separation lens arrays are repeatedly arranged are provided, and the color separation lens array is configured to interrupt phase distribution at the boundary of the periodic regions.
Abstract: provided are an image sensor including a nano-optical microlens array and an electronic apparatus including the same. the nano-optical lens array of the image sensor includes a plurality of reference lenses and a plurality of unit lenses. the plurality of reference lenses include a first reference lens disposed at a center of the image sensor, a second reference lens disposed in a first direction from the center of the image sensor, and a third reference lens disposed in a second direction from the center of the image sensor, the second direction forming an angle of 45� or 135� with the first direction. nanostructures included in the first reference lens, the second reference lens, and the third reference lens have different symmetrical structures.
20250204072. IMAGE SENSOR METHOD FABRICATING SAME (Samsung Electronics ., .)
Abstract: an example image sensor includes a substrate, a deep isolation pattern, and a shallow device isolation pattern. the substrate has first and second surfaces and includes a plurality of pixel regions. the deep isolation pattern extends from the first surface into the substrate and interposed between the plurality of pixel regions. the shallow device isolation pattern extends from the first surface into the substrate, where the deep isolation pattern and the shallow device isolation pattern are spaced apart from each other, a width of the deep isolation pattern is constant, and a width of the shallow device isolation pattern decreases as a distance from the first surface increases.
Abstract: according to an embodiment of the present disclosure, a display module comprises: a substrate including a mounting surface on which a thin film transistor (tft) layer is formed, a side surface, and a rear surface disposed on the opposite side of the mounting surface; a plurality of inorganic light-emitting elements mounted on the mounting surface; an anisotropic conductive layer electrically connecting the tft layer and the plurality of inorganic light-emitting elements, and disposed on the upper surface of the tft layer; a front cover covering the front surface of the anisotropic conductive layer; a side cover surrounding the side surface of the anisotropic conductive layer; and a side end member comprising a non-conductive material configured to seal the outer end of the side cover. the side end of the front cover extends to an area outside the mounting surface, the side end of the anisotropic conductive layer extends to the area outside the mounting surface so as to be disposed at a position corresponding to the side end of the front cover, the side cover is provided to contact the lower surface of the anisotropic conductive layer corresponding to the area outside the mounting surface, and the side end member is configured to seal an adhesive portion of the side end of the front cover and the side end of the anisotropic conductive layer.
20250204131. DISPLAY DEVICE (Samsung Electronics ., .)
Abstract: a display device capable of more efficiently taking out light transmitted through a wavelength conversion layer is provided. the display device includes, at least, a light source provided in each of a first pixel and a second pixel and configured to emit light of a first wavelength, a first wavelength conversion layer formed in the first pixel and configured to convert the light of the first wavelength into light of a second wavelength, a second wavelength conversion layer formed in the second pixel and configured to convert the light of the first wavelength into light of a third wavelength different from the second wavelength, a first color filter provided in the first pixel and configured to selectively transmit the light of the second wavelength, a second color filter provided in the second pixel and configured to selectively transmit the light of the third wavelength, and a plurality of nano members on which the light of the second wavelength and the light of the third wavelength are incident, and wherein the plurality of nano members include a high refractive index dielectric, and wherein the plurality of nano members are arranged in the first pixel in a first periodic distance, and wherein the plurality of nano members are arranged in the second pixel in a second periodic distance different from the first periodic distance.
20250204138. VARIABLE RESISTANCE MEMORY DEVICE (Samsung Electronics ., .)
Abstract: a variable resistance memory device including a stack including insulating sheets and conductive sheets, which are alternatingly stacked on a substrate, the stack including a vertical hole vertically penetrating therethrough, a bit line on the stack, a conductive pattern electrically connected to the bit line and vertically extending in the vertical hole, and a resistance varying layer between the conductive pattern and an inner side surface of the stack defining the vertical hole may be provided. the resistance varying layer may include a first carbon nanotube electrically connected to the conductive sheets, and a second carbon nanotube electrically connected to the conductive pattern.
20250204262. REACTIVE ION BEAM ETCHING (Samsung Electronics ., .)
Abstract: an ion beam etching method includes preparing a substrate on which a plurality of magnetic random access memory (mram) stacks are provided, performing main etching using ion beam etching such that sidewalls of the plurality of mram stacks have a target angle of inclination, and removing a conductive etching by-product redeposited on the sidewalls of the plurality of mram stacks during the main etching by performing trim etching using ion beam etching, where the performing the main etching includes performing a first main etching using ion beam etching on the plurality of mram stacks at a first incidence angle with respect to an upper surface of the substrate, and after performing the first main etching, performing a second main etching using ion beam etching on the plurality of mram stacks at a second incidence angle that is smaller than the first incidence angle.
Abstract: a neuromorphic computing array includes horizontal lines and vertical lines that intersect the horizontal lines at cell locations. magnetic tunnel junction cells are located at the cell locations. each cell is electrically connected to a corresponding one of the horizontal lines and to a corresponding one of the vertical lines. each cell includes a substrate, a seed layer overlying the substrate, and a nitride layer, overlying the seed layer, and optionally having a thickness greater than 5 angstroms. each cell further includes a templating layer, outward of the nitride layer, including a binary alloy having an alternating layer lattice structure, and having a thickness greater than 50 angstroms. each cell still further includes a magnetic layer overlying the templating layer, a tunnel barrier outward of the magnetic layer; and a magnetic layer outward of the tunnel barrier. the magnetic layer includes a heusler compound and exhibits perpendicular magnetic anisotropy (pma).
Abstract: disclosed are a memory device including a vertical stack structure, a method of manufacturing the same, and/or an electronic device including the memory device. the memory device includes a plurality of memory cells. the plurality of memory cells comprise a plurality of gate electrodes, a channel layer held in common by the plurality of memory cells, a recording material layer held in common by the plurality of memory cells, and a plurality of oxygen scavenger layers separated from each other. the plurality of gate electrodes and the plurality of oxygen scavenger layers are disposed so that the plurality of gate electrodes correspond to the plurality of oxygen scavenger layers one to one. each of the plurality of oxygen scavenger layers comprises an element that forms oxygen vacancies in the recording material layer and does not comprise oxygen.
20250204290. NONVOLATILE MEMORY DEVICE OPERATING METHOD SAME (Samsung Electronics ., .)
Abstract: a nonvolatile memory device includes a resistance switching layer, a gate on the resistance switching layer, a gate oxide layer between the resistance switching layer and the gate, and a source and a drain, spaced apart from each other, on the resistance switching layer. a resistance value of the resistance switching layer is changed based on an illumination of light irradiated onto the resistance switching layer and is maintained as a changed resistance value.