Rohm co., ltd. (20250015152). NITRIDE SEMICONDUCTOR DEVICE
NITRIDE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Manabu Yanagihara of Kyoto-shi (JP)
Kazuya Nagase of Kyoto-shi (JP)
Shinya Takado of Kyoto-shi (JP)
Hirotaka Otake of Kyoto-shi (JP)
NITRIDE SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250015152 titled 'NITRIDE SEMICONDUCTOR DEVICE
Original Abstract Submitted
a nitride semiconductor device includes: an electron transit layer; an electron supply layer that is formed on the electron transit layer and that has a band gap which is larger than that of the electron transit layer; a dielectric layer that is formed on the electron supply layer; and an electrode that has a contact part which is in electrical contact with the electron supply layer via at least an opening passing through the dielectric layer. the contact part has: an inclined surface that is inclined so as to decrease in width toward the electron transit layer; a tip surface that is in contact with the bottom face of the opening; and a curved surface that is provided between the tip surface and the inclined surface and that is curved so as to protrude toward the electron transit layer.