Rohm co., ltd. (20250015136). NITRIDE SEMICONDUCTOR DEVICE
NITRIDE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Ryoichi Makino of Kyoto-shi (JP)
NITRIDE SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250015136 titled 'NITRIDE SEMICONDUCTOR DEVICE
Original Abstract Submitted
a nitride semiconductor device includes an electron transit layer, an electron supply layer disposed on the electron transit layer to generate two-dimensional electron gas in the electron transit layer, a gate layer containing acceptor impurities and disposed on the electron supply layer, a gate electrode contacting the gate layer, a source electrode, and a drain electrode. the gate layer includes a trench that is recessed from an upper surface of the gate layer in a region contacting the gate electrode. the trench includes a trench open end, a trench bottom surface, and a curved surface continuous with the trench bottom surface and curved from the trench bottom surface toward the trench open end.