Rohm co., ltd. (20240421220). NITRIDE SEMICONDUCTOR DEVICE
NITRIDE SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Manabu Yanagihara of Kyoto-shi (JP)
Ryoichi Makino of Kyoto-shi (JP)
NITRIDE SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20240421220 titled 'NITRIDE SEMICONDUCTOR DEVICE
Original Abstract Submitted
a nitride semiconductor device includes an electron transit layer, an electron supply layer, a gate layer, a first gate electrode, a source electrode, a drain electrode, and a second gate electrode. the second gate electrode is made of a material different from the first gate electrode. the first gate electrode and the second gate electrode are in contact with an upper surface of the gate layer. a second contact area, which is a contact area between the second gate electrode and the gate layer, is smaller than a first contact area, which is a contact area between the first gate electrode and the gate layer.