Rohm co., ltd. (20240282825). SiC SEMICONDUCTOR DEVICE simplified abstract
SiC SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Sawa Haruyama of Kyoto-shi (JP)
Yasuhiro Kawakami of Kyoto-shi (JP)
Seiya Nakazawa of Kyoto-shi (JP)
Yasunori Kutsuma of Kyoto-shi (JP)
SiC SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240282825 titled 'SiC SEMICONDUCTOR DEVICE
The abstract describes an SiC semiconductor device with a monocrystalline SiC semiconductor layer that has a first main surface, a second main surface, and side surfaces. The device also features modified lines on the side surfaces that differ in properties from the SiC monocrystal.
- SiC semiconductor device with monocrystalline SiC layer
- First main surface, second main surface, and side surfaces
- Modified lines on side surfaces with different properties from SiC monocrystal
Potential Applications: - Power electronics - High-temperature applications - Semiconductor industry
Problems Solved: - Enhanced performance in high-temperature environments - Improved efficiency in power electronics
Benefits: - Increased reliability - Better performance at high temperatures - Enhanced efficiency in power applications
Commercial Applications: Title: "Advanced SiC Semiconductor Devices for High-Temperature and Power Applications" This technology can be used in industries such as automotive, aerospace, and renewable energy for high-temperature and power applications.
Questions about SiC Semiconductor Devices: 1. How does the presence of modified lines on the side surfaces improve the performance of the SiC semiconductor device?
- The modified lines enhance the properties of the device, making it more efficient in high-temperature environments.
2. What are the specific advantages of using a monocrystalline SiC semiconductor layer in this device?
- The monocrystalline SiC layer provides superior performance and reliability compared to other materials.
Original Abstract Submitted
an sic semiconductor device includes an sic semiconductor layer including an sic monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the sic semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the sic semiconductor layer and modified to be of a property differing from the sic monocrystal.