ROHM CO., LTD. patent applications on December 19th, 2024

Patent Applications by ROHM CO., LTD. on December 19th, 2024

ROHM CO., LTD.: 20 patent applications

ROHM CO., LTD. has applied for patents in the areas of H01L23/00 (5), H01L29/423 (4), H01L29/40 (4), H01L29/78 (3), H01L23/495 (3) H01L23/49562 (2), G01J1/44 (1), H01L29/404 (1), H03F3/16 (1), H02M1/088 (1)

With keywords such as: layer, electrode, semiconductor, gate, voltage, region, surface, element, signal, and insulating in patent application abstracts.

Patent Applications by ROHM CO., LTD.

20240418568. SENSING CIRCUIT AND OPTICAL SENSOR_simplified_abstract_(rohm co., ltd.)

Inventor(s): Takahiro KITAHARA of Kyoto-shi (JP) for rohm co., ltd., Satoshi ONO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): G01J1/44

CPC Code(s): G01J1/44

Abstract: for example, a sensing circuit includes: an integrator configured to generate an analog output signal by integrating an analog input signal; an analog/digital converter configured to convert the analog output signal into a digital output signal; and a controller configured to discharge the analog output signal when, during an integration period of the integrator, the digital output signal reaches a first threshold value.

20240418670. SENSOR SYSTEM_simplified_abstract_(rohm co., ltd.)

Inventor(s): Shunsuke AKASAKA of Kyoto-shi (JP) for rohm co., ltd., Ken NAKAHARA of Kyoto-shi (JP) for rohm co., ltd., Takashi NAIKI of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): G01N27/407, G01N33/00

CPC Code(s): G01N27/407

Abstract: a plurality of yttria-stabilized zirconia sensors, a drive device, and a controller are provided. the drive device drives each of the plurality of sensors. the controller the controller sequentially switches between/among the plurality of sensors based on a prescribed condition.

20240418753. ZERO-CROSSING DETECTION CIRCUIT_simplified_abstract_(rohm co., ltd.)

Inventor(s): Satoru Nate of Kyoto (JP) for rohm co., ltd., Akinobu Sawada of Kyoto (JP) for rohm co., ltd., Natsuki Yamamoto of Kyoto (JP) for rohm co., ltd.

IPC Code(s): G01R19/175, H02M1/08, H03K5/1536

CPC Code(s): G01R19/175

Abstract: a semiconductor integrated circuit device includes: a zero-crossing detection unit configured to compare a first monitoring target signal and a second monitoring target signal respectively input through diodes from a first node and a second node between which an ac signal is applied, so as to generate a comparison signal; a logic unit configured to count a period of the comparison signal and estimate a zero-cross of the ac signal using the count value, so as to generate a zero-crossing detection signal; and a monitoring unit configured to adjust the first monitoring target signal and the second monitoring target signal to be suitable for input to the zero-crossing detection unit, where a first chip, in which the monitoring unit is integrated, is cut out in a rectangular shape having a substantially equal ratio between a short side and a long side in a plan view.

20240418772. MONITORING CIRCUIT, SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND VEHICLE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Takashi FUJIMURA of Kyoto-shi (JP) for rohm co., ltd., Takashi KIRA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): G01R31/28, G01R31/00, G06F1/06, H03K21/02, H03K21/10

CPC Code(s): G01R31/2882

Abstract: a monitoring circuit includes first and second oscillators, first and second frequency dividers, first and second counters, a determination portion, and an identification portion. the first and second frequency dividers respectively divide frequencies of first and second clock signals outputted from the first and second oscillators, respectively. the first and second counters respectively count the numbers of clocks of the second and first clock signals at first and second numbers of periods of first and second frequency-divided signals outputted from the first and second frequency dividers, respectively. the determination portion determines, based on results of counting by the first and second counters, whether or not an abnormality has occurred in either of the first and second clock signals. the identification portion identifies, at the occurrence of an abnormality in either of the first and second clock signals, which of the first and second clock signals is in an abnormal state.

20240420884. INSULATED CHIP AND SIGNAL TRANSMITTING DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Bungo TANAKA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01F27/32, H01L23/00, H01L25/065

CPC Code(s): H01F27/324

Abstract: this transformer chip includes an element insulating layer and a high-voltage coil and a low-voltage coil embedded in the element insulating layer. the high-voltage coil includes a first end face facing the low-voltage coil side in the z-direction, a second end face opposite the first end face, and a first side face. the element insulating layer includes a third insulating layer, a second insulating layer laminated on the third insulating layer and having a higher relative dielectric constant than the third insulating layer, and a first insulating layer laminated on the second insulating layer and having a lower relative dielectric constant than the second insulating layer. the high-voltage coil is provided within the first insulating layer with the first end face in contact with the second insulating layer.

20240421022. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Hirokatsu UMEGAMI of Kyoto-shi (JP) for rohm co., ltd., Kazunori FUJI of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/34, H01L23/00, H01L23/31, H01L23/495

CPC Code(s): H01L23/34

Abstract: a semiconductor device includes a first lead, a second lead, a third lead, a semiconductor element mounted on the third lead, a first wire, and a second wire. the first lead includes a first pad portion, and a first terminal for measuring a temperature. the second lead includes a second pad portion, and a second terminal portion for measuring a temperature. the semiconductor element includes an element obverse surface, and a first electrode arranged on the element obverse surface. the first wire and the second wire are made of metals having different thermoelectric powers. the first wire is connected to the first electrode and the first pad portion. the second wire is connected to the first electrode and the second pad portion.

20240421028. COOLER AND SEMICONDUCTOR MODULE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Masashi HAYASHIGUCHI of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/367, H01L23/40

CPC Code(s): H01L23/3675

Abstract: a cooler includes a housing and a heat dissipator. the housing includes a recess that opens on a first side in a first direction and a bottom part located on a second side in the first direction and defining a part of the recess. the heat dissipator is attached to the bottom part and at least partially housed in the recess. the bottom part includes a flexible portion that deforms elastically. when a load toward the second side in the first direction is applied to the heat dissipator, an elastic force toward the first side in the first direction, which is generated from the flexible portion, acts on the heat dissipator. a semiconductor module includes a cooler, a semiconductor device disposed on the cooler, and a mounting member that holds the semiconductor device on the cooler.

20240421048. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Koki TANIZAWA of Kyoto-shi (JP) for rohm co., ltd., Shinichi HIRATA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/495, H01L23/00, H01L23/31

CPC Code(s): H01L23/49562

Abstract: a semiconductor device includes first and second leads, a semiconductor element, and conductive members. the first lead includes a base including a first surface on which the semiconductor element is mounted. each conductive member includes first and second end portions. the semiconductor element includes first and second obverse-surface electrodes formed on an element obverse surface. a first end portion of each conductive member is bonded to the first or the second obverse-surface electrode. the second lead includes first and second portions of an elongated shape. in plan view, the first portion is located on a first side in a first direction with respect to the base. the second portion is located on a first side in a second direction with respect to the base, extending in the first direction. the conductive members include a first conductive member whose second end portion is bonded to the second portion.

20240421049. SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Takeshi OKAMOTO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L23/495, H01L23/00, H01L29/40, H01L29/739

CPC Code(s): H01L23/49562

Abstract: the semiconductor device includes a semiconductor chip that has a first principal surface, a withstand-voltage holding structure in a peripheral region in the first principal surface, a plurality of first conductive layers that are formed in the first principal surface, a second conductive layer overlaps with a space between the plurality of mutually adjacent first conductive layers in a plan view, and a protective layer that covers the plurality of first conductive layers and the second conductive layer.

20240421112. SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Yuta KASHITANI of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H01L23/00, H01L23/31

CPC Code(s): H01L24/17

Abstract: a semiconductor element includes: an element front surface and an element back surface facing an opposite side from the element front surface; first and second electrodes that are formed over the element front surface; first electrode terminals in contact with the first electrode; second electrode terminals in contact with the second electrode; a first region in which the first electrode terminals are arranged; and a second region in which the second electrode terminals are arranged, wherein the number of the second electrode terminals per unit area in the second region is smaller than the number of the first electrode terminals per unit area in the first region, and wherein an area of each of the second electrode terminals is larger than an area of each of the first electrode terminals when viewed from a thickness direction which is perpendicular to the element front surface.

20240421195. NITRIDE SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Shinya TAKADO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/20, H01L29/40, H01L29/423, H01L29/778

CPC Code(s): H01L29/2003

Abstract: a nitride semiconductor device includes a passivation layer, which covers a gate layer, and a field plate electrode, which is arranged on the passivation layer. the gate layer includes a gate layer main body and a drain-side extension. the passivation layer includes a first part overlapping both the drain-side extension and the field plate electrode in plan view, a second part continuous with the first part and located between the drain-side extension and the drain opening, and a first step located in a region including a boundary of the first part and the second part. the first part has a first thickness from the upper step surface to an upper surface of the drain-side extension. the second part has a second thickness from the lower step surface to an upper surface of the electron supply layer. the first thickness is greater than the second thickness.

20240421198. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME_simplified_abstract_(rohm co., ltd.)

Inventor(s): Kunihiko IWAMOTO of Kyoto (JP) for rohm co., ltd.

IPC Code(s): H01L29/40, H01L21/762, H01L29/66, H01L29/78

CPC Code(s): H01L29/402

Abstract: a semiconductor device includes: a semiconductor substrate; a semiconductor layer that is located over the semiconductor substrate and includes a drain region, a source region, a drift region, and a channel region; an insulating film that is in contact with the semiconductor layer and is located over the channel region; a first interlayer insulating film that covers the insulating film; and a field plate that is located over the first interlayer insulating film, overlaps the drift region, and is electrically connected to the drain region.

20240421199. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Masaki NAGATA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/40, H01L27/088, H01L29/417, H01L29/423, H01L29/78

CPC Code(s): H01L29/404

Abstract: a semiconductor device includes: a semiconductor layer; a gate trench that is formed in the semiconductor layer and arranged in a mesh pattern in plan view; a field plate trench that is formed in the semiconductor layer and that is surrounded by the gate trench in plan view and separated from the gate trench; an insulation layer formed on the semiconductor layer; a gate electrode arranged in the gate trench; a first field plate electrode arranged in the gate trench below a bottom surface of the gate electrode; a second field plate electrode arranged in the field plate trench; and a source electrode formed on the insulation layer. the first field plate electrode and the second field plate electrode are electrically connected to the source electrode.

20240421203. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Shojiro KATO of Kyoto-shi (JP) for rohm co., ltd., Keita OKAMOTO of Kyoto-shi (JP) for rohm co., ltd., Shuntaro TAKAHASHI of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/417, H01L23/538, H01L27/02, H01L27/088

CPC Code(s): H01L29/41766

Abstract: a semiconductor device includes an insulated gate type first transistor that is formed at a semiconductor chip, an insulated gate type second transistor that is formed at the semiconductor chip, and a control wiring that transmits a control signal controlling the first transistor and the second transistor to reach an on state during a normal operation and controlling the first transistor to reach an off state and the second transistor to reach an on state during an active clamp operation.

20240421220. NITRIDE SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Manabu YANAGIHARA of Kyoto-shi (JP) for rohm co., ltd., Ryoichi MAKINO of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/778, H01L29/20, H01L29/423, H01L29/45, H01L29/47, H01L29/66

CPC Code(s): H01L29/7787

Abstract: a nitride semiconductor device includes an electron transit layer, an electron supply layer, a gate layer, a first gate electrode, a source electrode, a drain electrode, and a second gate electrode. the second gate electrode is made of a material different from the first gate electrode. the first gate electrode and the second gate electrode are in contact with an upper surface of the gate layer. a second contact area, which is a contact area between the second gate electrode and the gate layer, is smaller than a first contact area, which is a contact area between the first gate electrode and the gate layer.

20240421221. SEMICONDUCTOR DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Masaki NAGATA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H01L29/78, H01L29/423

CPC Code(s): H01L29/7816

Abstract: a semiconductor device includes: a semiconductor layer including a surface; a source region and a drain region arranged on the surface and separated from each other in a first direction as viewed in a thickness-wise direction orthogonal to the surface; a channel region formed on the surface between the source region and the drain region, the channel region being adjacent to the source region; a gate electrode arranged on the channel region with a gate insulating film disposed in between; a trench formed between the source region and the drain region; an insulation film arranged on inner walls of the trench; and an embedded electrode arranged in the trench and surrounded by the insulation film.

20240421617. AUTOMOTIVE INTEGRATED CIRCUIT_simplified_abstract_(rohm co., ltd.)

Inventor(s): Mitsuteru SAKAI of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H02J7/00, H02H9/04, H02H11/00, H03F3/217

CPC Code(s): H02J7/0034

Abstract: a constant voltage circuit stabilizes a voltage v that occurs at a capacitor connection terminal. an internal circuit operates based on the voltage that occurs at the capacitor connection terminal. a first voltage dividing circuit generates a first voltage, which is obtained by dividing the power supply voltage that occurs at the power supply terminal, at the capacitor connection terminal. a charging transistor is arranged with one end coupled to the capacitor connection terminal. a second voltage dividing circuit generates a second voltage obtained by dividing the power supply voltage at a control terminal of the charging transistor. a clamp circuit clamps the voltage that occurs at the capacitor connection terminal and the voltage at the control terminal of the charging transistor so as to prevent them from exceeding a limit voltage.

20240421694. DRIVING CIRCUIT, DRIVING SYSTEM AND POWER CONVERSION DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Takaharu ISHIBASHI of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H02M1/088

CPC Code(s): H02M1/088

Abstract: a driving circuit comprises: a driving voltage generation unit configured to, in a driving circuit that can drive a first semiconductor switching element (ql) including a first terminal, a second terminal, and a control terminal, supply a driving voltage (vgl) to the control terminal to switch between on and off of the first semiconductor switching element; a comparator configured to compare a voltage (vql) between the first terminal and the second terminal with a threshold voltage (vth1); and a driving signal generation unit that generates a driving signal (gsl′) to be input to the driving voltage generation unit on the basis of an output from the comparator and a first control signal (gsl) that is generated by a control device and controls switching of the first semiconductor switching element.

20240421778. AMPLIFIER, AMPLIFICATION CIRCUIT, AND CURRENT DETECTION DEVICE_simplified_abstract_(rohm co., ltd.)

Inventor(s): Akihiro OTA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H03F3/16, G01R19/00

CPC Code(s): H03F3/16

Abstract: an amplifier includes a first transistor, a second transistor arranged adjacent to the first transistor in plan view, a first conductor arranged around the first transistor and the second transistor in plan view, and a second conductor arranged, in plan view, in a direction farther away from the first transistor and the second transistor than the first conductor. the second conductor has a thickness that is greater than a thickness of the first conductor.

20240421822. LEVEL SHIFT CIRCUIT_simplified_abstract_(rohm co., ltd.)

Inventor(s): Seiji TAKENAKA of Kyoto-shi (JP) for rohm co., ltd.

IPC Code(s): H03K19/0185, H03K3/356

CPC Code(s): H03K19/018528

Abstract: a level shift circuit includes: a level information output circuit configured to output level information on an input signal; a latch circuit configured to operate between a first voltage and a reference voltage lower than the first voltage to latch the output of the level information output circuit; and a voltage controller configured to raise the first voltage to a first set value after completion of latching by the latch circuit, then, when the first voltage reaches the first set value, to raise the reference voltage to a second set value, and then, after raising the reference voltage to the second set value, to raise the first voltage to a third set value.

ROHM CO., LTD. patent applications on December 19th, 2024