Qualcomm incorporated (20240257868). Pseudo-Differential De-Glitch Sense Amplifier simplified abstract
Pseudo-Differential De-Glitch Sense Amplifier
Organization Name
Inventor(s)
Chulmin Jung of San Diego CA (US)
Po-Hung Chen of Los Angeles CA (US)
Ayan Paul of San Diego CA (US)
Chun-Yen Lin of Taoyuan Dist (TW)
Pseudo-Differential De-Glitch Sense Amplifier - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240257868 titled 'Pseudo-Differential De-Glitch Sense Amplifier
Simplified Explanation:
The patent application describes a memory system with a pseudo-differential sense amplifier that can single-endedly sense a first read bit line from a bank of bitcells. The sense amplifier compares the voltage of the first read bit line to a pre-charged second read bit line from another bank of bitcells to make a bit decision for a read operation.
- Utilizes a pseudo-differential sense amplifier for single-ended sensing of a first read bit line.
- Compares voltage levels of the first read bit line and a pre-charged second read bit line for making bit decisions.
- Enables read operations through the first read bit line to the bank of bitcells.
- Improves memory system efficiency and accuracy in reading data.
Potential Applications: This technology can be applied in various memory systems, such as DRAMs, SRAMs, and flash memory, to enhance read operations and improve data retrieval processes.
Problems Solved: 1. Enhances the accuracy of bit decisions in memory systems. 2. Improves the efficiency of read operations. 3. Enables faster data retrieval from memory banks.
Benefits: 1. Increased reliability in reading data from memory cells. 2. Enhanced performance of memory systems. 3. Improved overall efficiency in data retrieval processes.
Commercial Applications: Title: Enhanced Memory System with Pseudo-Differential Sense Amplifier This technology can be commercially utilized in the semiconductor industry for manufacturing advanced memory chips with improved read capabilities, leading to faster and more reliable data access in various electronic devices.
Questions about Memory Systems: 1. How does the pseudo-differential sense amplifier improve the accuracy of bit decisions in memory systems? The pseudo-differential sense amplifier compares voltage levels of read bit lines to make precise bit decisions, enhancing the reliability of data retrieval.
2. What are the potential commercial applications of this memory technology? This memory technology can be applied in the semiconductor industry to manufacture advanced memory chips with enhanced read capabilities, benefiting various electronic devices.
Original Abstract Submitted
a memory is provided with a pseudo-differential sense amplifier for single-endedly sensing a first read bit line from a first bank of bitcells. the sense amplifier compares a voltage of the first read bit line to a voltage of a pre-charged second read bit line from a second bank of bitcells to make a bit decision for a read operation through the first read bit line to the first bank of bitcells.