Qualcomm incorporated (20240257868). Pseudo-Differential De-Glitch Sense Amplifier
Pseudo-Differential De-Glitch Sense Amplifier
Organization Name
Inventor(s)
Chulmin Jung of San Diego CA US
Po-Hung Chen of Los Angeles CA US
Chun-Yen Lin of Taoyuan Dist TW
Pseudo-Differential De-Glitch Sense Amplifier
This abstract first appeared for US patent application 20240257868 titled 'Pseudo-Differential De-Glitch Sense Amplifier
Original Abstract Submitted
a memory is provided with a pseudo-differential sense amplifier for single-endedly sensing a first read bit line from a first bank of bitcells. the sense amplifier compares a voltage of the first read bit line to a voltage of a pre-charged second read bit line from a second bank of bitcells to make a bit decision for a read operation through the first read bit line to the first bank of bitcells.