Patent Application 19025829 - BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING - Rejection

Patent Application 19025829 - BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING

Title: BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD THEREOF AND FILTER

Application Information

• Invention Title: BULK ACOUSTIC WAVE RESONATOR AND MANUFACTURING METHOD THEREOF AND FILTER
• Application Number: 19025829
• Submission Date: 2025-05-20T00:00:00.000Z
• Effective Filing Date: 2025-01-16T00:00:00.000Z
• Filing Date: 2025-01-16T00:00:00.000Z
• Examiner Employee Number: 83554
• Art Unit: 2837
• Tech Center: 2800

Rejection Summary

• 102 Rejections: 1
• 103 Rejections: 0

Cited Patents

No patents were cited in this rejection.

Office Action Text

    DETAILED ACTION
Notice of Pre-AIA  or AIA  Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .
Election/Restrictions
Applicant’s election of Group I in the reply filed on 29 April 2025 is acknowledged. Because applicant did not distinctly and specifically point out the supposed errors in the restriction requirement, the election has been treated as an election without traverse (MPEP § 818.01(a)).
Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –

(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.


Claim(s) 1-6, 10 and 18 is/are rejected under 35 U.S.C. 102(a)(1) as being anticipated by Wang (PG Pub 20220158616).
Considering claim 1, Wang (Figure 1D) teaches a bulk acoustic wave resonator, comprising: a resonant body structure, comprising a piezoelectric layer (140), a first electrode structure layer(150) and a second electrode layer (130 + paragraph 0019), wherein the piezoelectric layer has a first side and a second side opposite to each other in a first direction; the first electrode structure layer is disposed on the first side of the piezoelectric layer (the bottom side see Figure 1D) and comprises a first electrode structure; the second electrode layer is disposed on the second side of the piezoelectric layer (top side see Figure 1D) and comprises a second electrode; a carrier structure (250 + paragraph 0032), disposed on a side of the resonant body structure away from the second electrode layer, wherein a first cavity (500b + paragraph 0031) is arranged between the carrier structure and the resonant body structure and a portion of the first electrode structure (130 + paragraph 0019) is located in the first cavity; a cover structure, disposed on a side of the resonant body structure opposite to the carrier structure, and comprising a cover bonding layer (200 + paragraph 0028) and a cover substrate (210 + paragraph 0019), wherein the cover bonding layer is disposed between the cover substrate and the resonant body structure in the first direction, a second cavity (500a + paragraph 0019) is provided between the cover structure and the resonant body structure, and a portion of the second electrode (150 + paragraph 0019) layer is located in the second cavity; a first conductive connector (230 + paragraph 0029) and a second conductive connector (220 + paragraph 0029), disposed on a side of the resonant body structure away from the cover structure, wherein the first conductive connector extends through the carrier structure to be electrically connected with the first electrode structure (130 + paragraph 0029), and the second conductive connector extends through the carrier structure and is electrically connected with the second electrode (150 + paragraph 0029) through an intermediate connecting component, the intermediate connecting component (400 + paragraph 0029) is spaced apart from the first cavity; and a pad layer, located on a side of the resonant body structure away from the carrier structure, and comprising one or more bonding pads (260 + 301 + 302 + paragraph 0039), wherein at least a portion of each of the one or more bonding pads is bonded with the cover bonding layer (240 + paragraph 0032) and the each of the one or more bonding pads has a recess (222 + 232 + paragraph 0039) recessed toward the first electrode structure layer, and the cover bonding layer comprises a protrusion part (442 + paragraph 0033) filling the recess and surrounded by the each of the one or more bonding pads (260 + 301 + 302 + paragraph 0039).
Considering claim 2, Wang (Figure 1D) teaches wherein an orthographic projection of the recess (222 + paragraph 0039) of the each of the one or more bonding pads on a main surface of the piezoelectric layer is located within an orthographic projection of the cover bonding layer (240 + paragraph 0032) on the main surface of the piezoelectric layer.
Considering claim 3, Wang (Figure 1D) teaches wherein the piezoelectric layer comprises a piezoelectric via hole (422 + paragraph 0033) and a bonding pad (260 + paragraph 0034) of the one or more bonding pads comprises a horizontally extending part and a recessed part, the horizontally extending part is located at a side of the piezoelectric layer away form the first electrode structure layer, the recessed part is filled into the piezoelectric via hole and defines the recess (see Figure 1D).
Considering claim 4, Wang (Figure 1D) teaches wherein an orthographic projection of the recessed part (222 + paragraph 0039) of the bonding pad on the piezoelectric layer is offset from an orthographic projection of the second cavity (500a + paragraph 0031) on the piezoelectric layer.
Considering claim 5, Wang (Figure 1D) teaches wherein the protrusion part (430 + paragraph 0033) of the cover bonding layer (240 + paragraph 0032) overlaps the piezoelectric layer in a direction parallel to a main surface of the piezoelectric layer.
Considering claim 6, Wang (Figure 1D) teaches wherein the pad layer comprises: a first conductive pad (260 + paragraph 0034), disposed on a surface of the piezoelectric layer at the second side, and extending through the piezoelectric layer to be electrically connected with the first electrode structure (150 + paragraph 0029); the first conductive pad serves as a first bonding pad among the one or more bonding pads, and the cover layer comprises a first protrusion part (430 + paragraph 0033), located in the recess of the first conductive pad and surrounded by the first conductive pad.
Considering claim 10, Wang (Figure 1D) teaches a passivation layer (290 + paragraph 0039), located between the resonant body structure and the carrier structure, and located between the resonant body structure and the first cavity and separating the first electrode structure from the first cavity.
Considering claim 18, Wang teaches a filter, comprising the bulk acoustic wave resonator (abstract).
Allowable Subject Matter
Claims 7-9 and 11-17 are objected to as being dependent upon a rejected base claim, but would be allowable if rewritten in independent form including all of the limitations of the base claim and any intervening claims.
Considering claim 7, the prior art does not teach the intermediate connecting component comprises: an additional electrode structure, located in the first electrode structure layer, and spaced apart and electrically isolated from the first electrode structure; an interconnection pad, disposed in the pad layer, located on a side of the additional electrode structure away from the carrier substrate, and electrically connected with the additional electrode structure and the second electrode, and serving as a second bonding pad among the one or more bonding pads.
Furthermore, claims 8-9, which depend upon claim 7, would also be allowed if they depended upon an independent and allowable claim.
Considering claim 11, the prior art does not teach wherein the carrier structure comprises: a supporting dielectric layer, disposed on a side of the first electrode structure layer away from the piezoelectric layer; a cavity boundary layer, located on a side of the supporting dielectric layer and the resonant body structure away from the cover structure, a carrier bonding layer, located on a side of the cavity boundary layer away from the resonant body structure in combination with the rest of the applicant’s claimed limitations.
Furthermore, claims 12-17, which depend upon claim 11, would also be allowed if they depended upon an independent and allowable claim.
Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to BRYAN P GORDON whose telephone number is (571)272-5394. The examiner can normally be reached M-F 8 a.m. - 4:30 p.m..
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/BRYAN P GORDON/Primary Examiner, Art Unit 2837