Patent Application 18545218 - OPTICAL ROIC INTEGRATION FOR OLED-BASED INFRARED

Title: OPTICAL ROIC INTEGRATION FOR OLED-BASED INFRARED SENSORS

Application Information

Invention Title: OPTICAL ROIC INTEGRATION FOR OLED-BASED INFRARED SENSORS
Application Number: 18545218
Submission Date: 2025-05-15T00:00:00.000Z
Effective Filing Date: 2023-12-19T00:00:00.000Z
Filing Date: 2023-12-19T00:00:00.000Z
National Class: 348
National Sub-Class: 164000
Examiner Employee Number: 91996
Art Unit: 2486
Tech Center: 2400

Rejection Summary

102 Rejections: 1
103 Rejections: 2

Cited Patents

The following patents were cited in the rejection:

Office Action Text

DETAILED ACTION
This Office Action is in response to the application filed on 12/19/2023, wherein claims 1-20 have been examined and are pending.

Notice of Pre-AIA or AIA Status
The present application, filed on or after March 16, 2013, is being examined under the first inventor to file provisions of the AIA .

Information Disclosure Statement
The information disclosure statement (IDS) submitted on 12/19/2023. The submission is in compliance with the provisions of 37 CFR 1.97. Accordingly, the information disclosure statement is being considered by the examiner.

Claim Objections
Claim 1 is objected to because of the following informalities:
Claim 1 recites “the non-pixelated non-visible sensitive light source sensitive light source positioned to pass visible light” which seems to be a typo.
Appropriate correction is required.

Claim Rejections - 35 USC § 102
The following is a quotation of the appropriate paragraphs of 35 U.S.C. 102 that form the basis for the rejections under this section made in this Office action:
A person shall be entitled to a patent unless –

(a)(1) the claimed invention was patented, described in a printed publication, or in public use, on sale, or otherwise available to the public before the effective filing date of the claimed invention.

1. Claims 1, 3-4, 6-8, 12-14, 16 and 19-20 are rejected under 35 U.S.C. 102(a)(1) as being anticipated by So et al. (U.S. 2014/0111652) hereinafter So.
Regarding claim 1, So discloses an image capture device, comprising:
a visible image sensor configured to receive visible light indicative of a scene and generate an image depicting the scene (So Figs. 1-2 and 6, [0012], [0015]: a CMOS image sensor CIS for capturing images and having an up-conversion device coupled thereon as in [0021]);
an optical transfer medium on the visible image sensor, the optical transfer medium constructed of a material operable to pass visible light indicative of the scene to the visible image sensor (So [0002]: NIR-to-visible light up-conversion device; Figs. 1-2 and 6, [0020]: an IR pass visible blocking layer, hence optical transfer medium; [0021]: the up-conversion device comprises a pair of glass substrates, i.e. optical transfer medium. A glass substrate is coupled beneath visible light emitting layer LED and a cathode and passes the visible light to the image sensor CIS as in Fig. 1, since the image sensor CIS is coupled beneath the up-conversion device as in Fig. 6); and
a non-pixelated non-visible sensitive light source connected to the optical transfer medium, and having a light source configured to generate visible light indicative of the scene in response to non-visible medium stimulation (So Figs. 1-2 and 6, [0012]-[0013]: light emitting layer LED sandwiched between an anode and a cathode and generates visible light when infrared light passes the IR sensitizing layer; [0021]: visible light emitted by the light emitting layer activates the photodetector of pixels of the CIS), a non- visible sensitizing part configured to detect the non-visible medium indicative of the scene, the non-pixelated non-visible sensitive light source sensitive light source positioned to pass visible light to the optical transfer medium such that visible light is passed to the image sensor (So Figs. 1-2 and 6, [0012]-[0013], [0015]-[0016]: entering IR radiation is transported to an IR sensitizing layer, and the entering light and the generated light, i.e. visible light, can reach the surface of the image sensor CIS at the light exiting surface of the up-conversion device. The generated light from the IR sensitizing layer passes through the glass substrate before reaching the image sensor CIS as in Fig. 1).

Regarding claim 3, So discloses all the limitations of claim 1.
So discloses wherein the non-pixelated non-visible sensitive light source includes a transparent anode, the non-visible sensitizing part, the light source, and a transparent cathode, the non-visible sensitizing part being positioned between the transparent anode and the light source, the light source being positioned between the non-visible sensitizing part and the transparent cathode (So Figs. 1-2, [0012]-[0015], [0018], [0004]: a transparent anode, the IR sensitizing part is positioned between the transparent anode and the light emitting layer LED. The light emitting layer LED is positioned between the IR sensitizing part and the transparent cathode as in Figs. 1-2).

Regarding claim 4, So discloses all the limitations of claim 1.
So discloses wherein the non-visible sensitizing part includes a hole blocking layer, a non-visible sensing layer, and a hole transport layer, the non-visible sensing layer being positioned between the hole blocking layer and the hole transport layer (So Figs. 1-2, [0012]-[0015], [0018], [0004]: IR sensitizing layer, i.e. IR sensing layer, positioned between a hole blocking layer and a hole transport layer as in Fig. 2).

Regarding claim 6, So discloses all the limitations of claim 4.
So discloses wherein the hole blocking layer is comprised of one or more of a ZnO, a TiO, a BCP, a 3TPYMB, a TPBi, a TMPYPB, a PC60BM, a PC70BM, and an ITIC (So [0016], Claim 3: hole blocking layer comprises

T
i
O

2

, ZnO, BCP, 3TPYMB).

Regarding claim 7, So discloses all the limitations of claim 4.
So discloses wherein the non-visible sensing layer is configured to sense infrared light, and wherein the non-visible sensing layer includes one or more of SnPc, a SnPc:C60, a SnNcCl2, a SnNcCl2, a CoiDFIC, PTB7-Th, a PTB7-Th:CoiDFIC, a PbS nanocrystal layer, a PbSe nanocrystal layer, and an InAs nanocrystal layer (So Figs. 1-2, [0016], Claim 4: IR sensitizing layer comprises tin (II) phthalocyanine (SnPc), SnPc:Csub.60).

Regarding claim 8, So discloses all the limitations of claim 4.
So discloses wherein the hole transporting layer is comprised of one or more of a TAPC, a NPB, a TFB, a TPD, a poly-TPD, a TFB, and a P3HT (So [0017], Claim 5: the hole transport layer comprises TAPC, NPB, TPD).

Regarding claim 12, So discloses all the limitations of claim 1.
So discloses wherein the non-visible sensitizing part and the light source positioned on the optical transfer medium (So Figs. 1-2, [0021]: IR sensitizing part and light emitting layer LED are positioned between a pair of glass substrates, i.e. optical transfer medium; [0021]: the up-conversion device is constructed as a transparent flexible film that is subsequently laminated to the image sensor CIS).

Regarding claim 13, So discloses all the limitations of claim 1.
So discloses wherein the visible image sensor is comprised of one or more of a CMOS sensor, a CCD sensor, a TFT sensor (So [0012]: CMOS image sensor).

Regarding claim 14, So discloses all the limitations of claim 1.
So discloses wherein the visible image sensor is flexible so as to be capable of being malleable without breaking (So [0021], [0019], [0004]: the up-conversion device is constructed as a transparent flexible film that is subsequently laminated to the image sensor CIS. The coupling of the CIS to the up-conversion device to form the imaging device, hence a flexible image sensor).

Regarding claim 16, So discloses all the limitations of claim 1.
So discloses wherein the optical transfer medium includes a first optical transfer medium and a second optical transfer medium (So Figs. 1-2, [0021]: IR sensitizing part and light emitting layer LED are positioned between a pair of glass substrates; [0020]: the IR pass visible blocking layer, i.e. first optical transfer medium, is situated next to the glass substrate, i.e. second optical transfer medium).

Regarding claim 19, So discloses a method, comprising:
receiving a non-visible medium of a scene through free space (So Figs. 1-2 and 6, [0012]-[0015]: CMOS image sensor CIS coupled to an up-conversion device to receive IR radiation input);
converting the non-visible medium of the scene to visible light indicative of the scene space (So Figs. 1-2 and 6, [0012]-[0015]: NIR-to-visible light up-conversion device can be used. Incoming IR radiation is received and visible light is generated as in Fig. 1 for CMOS image sensor CIS; [0021]: visible light emitted by the light emitting layer activates the photodetector of pixels of the CIS); and
capturing an image of the visible light indicative of the scene space (So Figs. 1-2 and 6, [0012]-[0015], [0002]-[0004]: the CMOS image sensor generate visible images).

Regarding claim 20, So discloses a method of making an image capture device, comprising:
connecting a visible image sensor, an optical transfer medium and a non-pixelated non-visible sensitive light source together to form a composite structure, with the optical transfer medium positioned between the visible image sensor and the non-pixelated non-visible sensitive light source (So Figs. 1-2 and 6, [0012]-[0015], [0021]: CMOS image sensor CIS coupled to an up-conversion device to receive IR radiation input; [0002]: NIR-to-visible light up-conversion device; the up-conversion device comprises a pair of glass substrates, i.e. optical transfer medium. Light emitting layer LED sandwiched between an anode and a cathode and generates visible light. A glass substrate is coupled beneath visible light emitting layer LED and a cathode and passes the visible light to the image sensor CIS as in Fig. 1, since the image sensor CIS is coupled beneath the up-conversion device as in Fig. 6. Entering IR radiation is transported to an IR sensitizing layer, and the entering light and the generated light, i.e. visible light, can reach the surface of the image sensor CIS at the light exiting surface of the up-conversion device. The generated light from the IR sensitizing layer passes through the glass substrate before reaching the image sensor CIS as in Fig. 1).

Claim Rejections - 35 USC § 103
The following is a quotation of 35 U.S.C. 103 which forms the basis for all obviousness rejections set forth in this Office action:
A patent for a claimed invention may not be obtained, notwithstanding that the claimed invention is not identically disclosed as set forth in section 102, if the differences between the claimed invention and the prior art are such that the claimed invention as a whole would have been obvious before the effective filing date of the claimed invention to a person having ordinary skill in the art to which the claimed invention pertains. Patentability shall not be negated by the manner in which the invention was made.

The text of those sections of Title 35, U.S. Code not included in this action can be found in a prior Office action.
The factual inquiries for establishing a background for determining obviousness under 35 U.S.C. 103 are summarized as follows:
1. Determining the scope and contents of the prior art.
2. Ascertaining the differences between the prior art and the claims at issue.
3. Resolving the level of ordinary skill in the pertinent art.
4. Considering objective evidence present in the application indicating obviousness or nonobviousness.

2. Claims 2, 15 and 17-18 are rejected under 35 U.S.C. 103 as being unpatentable over So et al. (U.S. 2014/0111652) hereinafter So, in view of So et al. (U.S. 2014/0175410) hereinafter So 2.
Regarding claim 2, So discloses all the limitations of claim 1.
So does not explicitly disclose wherein the optical transfer medium comprises a dielectric interlayer comprised of one or more of a SiO2, a Si3N4, an A1203, a SiNx, a SiOxNy, a polycarbonate, an acrylic, a polypropylene, a polystyrene, and a fiber optics plate.
However, So discloses an IR pass visible blocking layer as in Fig. 1, [0020].
So 2 discloses wherein the optical transfer medium comprises a dielectric interlayer comprised of one or more of a SiO2, a Si3N4, an A1203, a SiNx, a SiOxNy, a polycarbonate, an acrylic, a polypropylene, a polystyrene, and a fiber optics plate (So 2 Fig. 4, [0020]: IR pass visible blocking layer is used to allow visible light from the light emitting layer LED to be transmitted internally to the cathode as in Fig. 4, i.e. optical transfer medium that passes visible light to the image sensor; [0021]: the IR pass visible blocking layer employs multi dielectric stack layer which can comprise SiO2).
It would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to use the method and system, as disclosed by So, and further incorporate having the optical transfer medium comprises a dielectric interlayer comprised of one or more of a SiO2, a Si3N4, an A1203, a SiNx, a SiOxNy, a polycarbonate, an acrylic, a polypropylene, a polystyrene, and a fiber optics plate, as taught by So 2, for conversion efficiencies, high sensitivity, and high image fidelity (So 2 [0003]).

Regarding claim 15, So discloses all the limitations of claim 1.
So discloses wherein the visible image sensor includes pixels having a pixel size, and wherein the optical transfer medium includes a dielectric interlayer being thinner than the pixel size of the visible image sensor (So [0020]: the IR pass layer is a composite of layers that are 10 to 100 nm in thickness which is thinner than regular pixel size, as also disclosed in the specification [0034] of the current application that the optical transfer medium is less than 200 nm).
So 2 discloses the visible image sensor includes pixels having a pixel size, and wherein the optical transfer medium includes a dielectric interlayer being thinner than the pixel size of the visible image sensor (So 2 Fig. 4, [0020]: IR pass visible blocking layer is used to allow visible light from the light emitting layer LED to be transmitted internally to the cathode as in Fig. 4, i.e. optical transfer medium that passes visible light to the image sensor; [0020]: the IR pass layer is a composite of layers that are 10 to 100 nm in thickness which is thinner than regular pixel size, as also disclosed in the specification [0034] of the current application that the optical transfer medium is less than 200 nm).
It would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to use the method and system, as disclosed by So, and further incorporate having the IR pass layer to pass internal visible light as in So 2, hence the visible image sensor includes pixels having a pixel size, and wherein the optical transfer medium includes a dielectric interlayer being thinner than the pixel size of the visible image sensor, as taught by So 2, for conversion efficiencies, high sensitivity, and high image fidelity (So 2 [0003]).

Regarding claim 17, So discloses all the limitations of claim 16.
So does not explicitly disclose wherein the first optical transfer medium is a dielectric interlayer having a thickness configured to allow visible images to be captured by the visible image sensor without an additional focus lens (So Fig. 1, [0020]: IR pass visible blocking layer is used to allow visible light from the light emitting layer LED to be transmitted internally to the cathode as in Fig. 4, i.e. optical transfer medium that passes visible light to the image sensor. The IR pass layer is a composite of layers that are 10 to 100 nm in thickness. No additional focus lens use is mentioned also as in Figs. 1-6).
However, So 2 discloses the first optical transfer medium is a dielectric interlayer having a thickness configured to allow visible images to be captured by the visible image sensor without an additional focus lens (So 2 Figs. 4 and 6, [0020]: IR pass visible blocking layer is used to allow visible light from the light emitting layer LED to be transmitted internally to the cathode as in Fig. 4, i.e. optical transfer medium that passes visible light to the image sensor. The IR pass layer is a composite of layers that are 10 to 100 nm in thickness. No additional focus lens use is mentioned also as in Figs. 1-6).
It would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to use the method and system, as disclosed by So, and further incorporate having the IR pass layer to pass internal visible light as in So 2, hence the first optical transfer medium is a dielectric interlayer having a thickness configured to allow visible images to be captured by the visible image sensor without an additional focus lens, as taught by So 2, for conversion efficiencies, high sensitivity, and high image fidelity (So 2 [0003]).

Regarding claim 18, So discloses all the limitations of claim 16.
So does not explicitly disclose wherein the dielectric interlayer is positioned between the light source of the non-pixelated non-visible sensitive light source and the second optical transfer medium (So Fig. 1, [0020]: the IR pass visible blocking layer is positioned between the light emitting layer LED and the glass substrate, i.e. second optical transfer medium).
So discloses wherein the dielectric interlayer is positioned between the light source of the non-pixelated non-visible sensitive light source and the second optical transfer medium (So 2 Figs. 4 and 6, [0020]: IR pass visible blocking layer is used to allow visible light from the light emitting layer LED to be transmitted internally to the cathode as in Fig. 4, i.e. optical transfer medium that passes visible light to the image sensor. The IR pass visible blocking layer is positioned between the light emitting layer LED and the glass substrate, i.e. second optical transfer medium).
It would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to use the method and system, as disclosed by So, and further incorporate having the IR pass layer to pass internal visible light as in So 2, hence the dielectric interlayer is positioned between the light source of the non-pixelated non-visible sensitive light source and the second optical transfer medium, as taught by So 2, for conversion efficiencies, high sensitivity, and high image fidelity (So 2 [0003]).

3. Claims 5 and 9-11 are rejected under 35 U.S.C. 103 as being unpatentable over So et al. (U.S. 2014/0111652) hereinafter So, in view of So et al. (U.S. 2019/0393271) hereinafter So 3.
Regarding claim 5, So discloses all the limitations of claim 1.
So discloses wherein the light source includes the hole transport layer, a visible emitting layer, an electron transport layer, an electron injection layer, the visible emitting layer being positioned between the hole transport layer and the electron transport layer, the electron transport layer being positioned next to the visible emitting layer (So Figs. 1-2, [0012]-[0015], [0018], [0004]: visible light emitting layer is positioned between hole transport layer and electron transport layer. Electron transport layer is positioned next to visible light emitting layer).
So does not explicitly disclose the electron transport layer being positioned between the visible emitting layer and an electron injection layer.
However, the electron transport layer being positioned between the visible emitting layer and the electron injection layer (So 3 Fig. 2A, [0044], [0030], [0032]: third electrode 224 injects electrons to form second optical signal, i.e. electron injection layer. A second electron transport layer ETL 220 is positioned between the third electrode 224, i.e. electron injection layer, and the light emitting layer 220 as in Fig. 2A).
It would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to use the method and system, as disclosed by So, and further incorporate having the electron transport layer being positioned between the visible emitting layer and an electron injection layer, as taught by So 3, to improve sensitivity of the imaging device without affect image quality (So 3 [0006]).

Regarding claim 9, So and So 3 disclose all the limitations of claim 5.
So discloses wherein the visible emitting layer is configured to emit visible light, the visible emitting layer comprised of one or more of an Ir(ppy)3, a FIrPic, Ir(MDQ)2(acac), a MEH-PPV, and an Alq3 (So [0017], Claim 6: light emitting LED materials include but are not limited to Ir(ppy)3, MEH-PPV, Alq3, FIrpic).

Regarding claim 10, So and So 3 disclose all the limitations of claim 5.
So discloses wherein the electron transport layer is comprised of one or more of a BCP, a Bphen, a 3TPYMB, a TPBi, a TMPYPB, and an Alq3 (So [0017]: electron transport layer materials include but are not limited to BCP, BPhen, 3TPYMB, Alq3).

Regarding claim 11, So and So 3 disclose all the limitations of claim 5.
So does not explicitly disclose wherein the electron injection layer is comprised of one or more of a LiF and a Liq.
However, So 3 discloses the electron injection layer is comprised of one or more of a LiF and a Liq (So 3 [0041]: the third electrode 224, i.e. electron injection layer, includes lithium fluoride (LiF), or the like).
It would have been obvious to a person of ordinary skill in the art before the effective filing date of the claimed invention to use the method and system, as disclosed by So and So3, and further incorporate having the electron injection layer is comprised of one or more of a LiF and a Liq, as taught by So 3, to improve sensitivity of the imaging device without affect image quality (So 3 [0006]).

Conclusion
Any inquiry concerning this communication or earlier communications from the examiner should be directed to KATHLEEN V NGUYEN whose telephone number is (571)270-0626. The examiner can normally be reached on M-F 9:00am-6:00pm.
If attempts to reach the examiner by telephone are unsuccessful, the examiner’s supervisor, Jamie Atala can be reached on 571-272-7384. The fax phone number for the organization where this application or proceeding is assigned is 571-273-8300.
Information regarding the status of an application may be obtained from the Patent Application Information Retrieval (PAIR) system. Status information for published applications may be obtained from either Private PAIR or Public PAIR. Status information for unpublished applications is available through Private PAIR only. For more information about the PAIR system, see http://pair-direct.uspto.gov. Should you have questions on access to the Private PAIR system, contact the Electronic Business Center (EBC) at 866-217-9197 (toll-free). If you would like assistance from a USPTO Customer Service Representative or access to the automated information system, call 800-786-9199 (IN USA OR CANADA) or 571-272-1000.

/KATHLEEN V NGUYEN/Primary Examiner, Art Unit 2486

Patent Application 18545218 - OPTICAL ROIC INTEGRATION FOR OLED-BASED INFRARED - Rejection

Patent Application 18545218 - OPTICAL ROIC INTEGRATION FOR OLED-BASED INFRARED

Application Information

Rejection Summary

Cited Patents

Office Action Text

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