Nanya technology corporation (20250126868). METHODS OF FORMING SEMICONDUCTOR STRUCTURES
METHODS OF FORMING SEMICONDUCTOR STRUCTURES
Organization Name
Inventor(s)
Ying-Cheng Chuang of Taoyuan City TW
METHODS OF FORMING SEMICONDUCTOR STRUCTURES
This abstract first appeared for US patent application 20250126868 titled 'METHODS OF FORMING SEMICONDUCTOR STRUCTURES
Original Abstract Submitted
a method of forming a semiconductor structure includes the following operations. a trench is formed in a substrate. a dielectric layer is formed to cover an inner surface of the trench. a bottom conductive layer is deposited on the dielectric layer and in the trench at a first temperature of 350� c. to 450� c. an annealing process is performed on the bottom conductive layer at a second temperature greater than or equal to 470� c. a portion of the bottom conductive layer is removed to form a recess on the bottom conductive layer and in the trench. a top conductive layer is formed in the recess.