SEMICONDUCTOR DEVICE

Organization Name

murata manufacturing co., ltd.

Inventor(s)

Atsushi Kurokawa of Nagaokakyo-shi (JP)

Hiroshi Yamada of Nagaokakyo-shi (JP)

Akira Fujihara of Nagaokakyo-shi (JP)

SEMICONDUCTOR DEVICE

This abstract first appeared for US patent application 20240413083 titled 'SEMICONDUCTOR DEVICE

Original Abstract Submitted

a first insulating layer containing a silicon oxide is disposed on a surface of an insulating member. a transistor is disposed over a part of an area of a first insulating layer. a second insulating layer covers the first insulating layer and the transistor. a first wiring is disposed on the second insulating layer. a through-hole extends through the second insulating layer and the first insulating layer from a lower surface of the first wiring to the insulating member. at least a part of an outer edge of the through-hole overlaps the first wiring in a plan view. the first wiring includes a lower layer that is in contact with the second insulating layer, and the lower layer is formed from ta, w, a ta compound, or a w compound.