SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

Organization Name

Inventor(s)

Hisatoshi Kawabata of Nagaokakyo-shi (JP)

SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

This abstract first appeared for US patent application 20240413036 titled 'SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE

Original Abstract Submitted

a device layer is on a first surface which is one surface of a first insulating layer. the device layer includes a transistor including source regions and drain regions, a source contact electrode connected to a source contact region on surfaces of the source regions, a drain contact electrode connected to a drain contact region on surfaces of the drain regions, wires, and vias. an insulating member is bonded to a second surface of the first insulating layer opposite to the first surface. a conical surface whose apex is located on the second surface, whose central axis is a straight line perpendicular to the second surface, and whose generatrix is a half-line extending toward the insulating member at an angle of 45� with respect to the central axis is defined as a criterion conical surface.