Mitsubishi electric corporation (20250151300). SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
mitsubishi electric corporation
Inventor(s)
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250151300 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device includes: an emitter layer and a contact layer that are provided in a surface portion of a base layer; a carrier storage layer provided between the base layer and a drift layer; and a trench reaching a position deeper than the carrier storage layer and having a gate electrode buried therein. a depth of the contact layer is deeper than that of the emitter layer. an impurity concentration of the carrier storage layer is 1.4e16/cmor less at least in a portion adjacent to the trench.