Mitsubishi electric corporation (20250142974). POWER SEMICONDUCTOR DEVICE
POWER SEMICONDUCTOR DEVICE
Organization Name
mitsubishi electric corporation
Inventor(s)
POWER SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250142974 titled 'POWER SEMICONDUCTOR DEVICE
Original Abstract Submitted
an object of the present disclosure is to provide a power semiconductor device in which a temperature sensing diode is built in a trench without losing its function as an active gate. a power semiconductor device includes, in an active region, a p-type base layer formed on an n-type drift layer, a plurality of n-type well regions formed in a front layer of the p-type base layer, and a polysilicon layer formed in each trench via an insulating film. the polysilicon layer formed in at least one trench includes an n-type polysilicon layer connected to an emitter terminal of a switching element, and a p-type polysilicon layer connected to a gate terminal of the switching element and enclosing a surface of the n-type polysilicon layer facing a side surface of the trench.