Mitsubishi electric corporation (20250140719). SEMICONDUCTOR APPARATUS
SEMICONDUCTOR APPARATUS
Organization Name
mitsubishi electric corporation
Inventor(s)
SEMICONDUCTOR APPARATUS
This abstract first appeared for US patent application 20250140719 titled 'SEMICONDUCTOR APPARATUS
Original Abstract Submitted
according to the present disclosure, a semiconductor apparatus comprises a semiconductor substrate, on a front surface of which a semiconductor device is formed, a surface electrode formed on the front surface and connected to the semiconductor device, a metal film formed on the surface electrode, a suppression film formed on the surface electrode and configured to suppress the spread of solder applied on the metal film, and a thermally conductive film formed further on an outer periphery side than the metal film and the suppression film on the surface electrode, thicker than the metal film, and having higher thermal conductivity than the suppression film.