Mitsubishi electric corporation (20250120168). SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
mitsubishi electric corporation
Inventor(s)
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 20250120168 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
a semiconductor device includes a semiconductor substrate on which a plurality of trenches are formed, an interlayer insulating film formed on the semiconductor substrate, a contact hole made in the interlayer insulating film, and an electrode connected to a semiconductor mesa portion that is a portion between the trenches of the semiconductor substrate through the contact hole. a side wall of the contact hole has a stepped shape having at least one step. a bottom of the contact hole is located on the semiconductor mesa portion, and an upper end of the contact hole is located outside the semiconductor mesa portion.