SEMICONDUCTOR DEVICE

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SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240243166 titled 'SEMICONDUCTOR DEVICE

The abstract describes a trench gate type semiconductor device with an active region containing an n-type emitter layer adjacent to a trench, and a thinned region without the emitter layer next to the trench. The active region has a first n-type carrier accumulation layer, while the thinned region has a second n-type carrier accumulation layer with a lower impurity concentration. A p-type contact layer in the thinned region makes contact with an emitter electrode.

The semiconductor device has an active region with an n-type emitter layer next to a trench and a thinned region without the emitter layer.
A first n-type carrier accumulation layer is present in the active region, while a second n-type carrier accumulation layer with lower impurity concentration is in the thinned region.
The p-type contact layer in the thinned region connects with an emitter electrode.

Potential Applications: - Power electronics - Semiconductor manufacturing - Electrical engineering research and development

Problems Solved: - Improved carrier accumulation in different regions of the device - Enhanced performance and efficiency of the semiconductor device

Benefits: - Higher efficiency in power conversion - Better control of carrier accumulation - Increased reliability and longevity of the device

Commercial Applications: Title: Enhanced Trench Gate Semiconductor Device for Power Electronics This technology can be utilized in industries such as renewable energy, electric vehicles, and industrial automation for improved power management and control.

Questions about the technology: 1. How does the impurity concentration affect the performance of the carrier accumulation layers?

  - The impurity concentration influences the conductivity and efficiency of the carrier accumulation layers in the semiconductor device.

2. What advantages does the thinned region without the emitter layer provide in the device?

  - The thinned region allows for specific control and optimization of carrier accumulation in different parts of the device.

Original Abstract Submitted

a trench gate type semiconductor device is provided with an active region that is a region where an n-type emitter layer is provided adjacent to a trench and a thinned region that is a region where the n-type emitter layer is not provided adjacent to the trench. in the active region, a first n-type carrier accumulation layer is provided as a carrier accumulation layer. in the thinned region, a second n-type carrier accumulation layer having a lower impurity concentration than the first n-type carrier accumulation layer is provided as the carrier accumulation layer. a p-type contact layer in the thinned region has a portion in contact with an emitter electrode.