Micron technology, inc. (20250132248). MEMORY DEVICES INCLUDING STAIRCASE STRUCTURES
MEMORY DEVICES INCLUDING STAIRCASE STRUCTURES
Organization Name
Inventor(s)
Richard J. Hill of Boise ID US
Umberto M. Meotto of Dietlikon CH
MEMORY DEVICES INCLUDING STAIRCASE STRUCTURES
This abstract first appeared for US patent application 20250132248 titled 'MEMORY DEVICES INCLUDING STAIRCASE STRUCTURES
Original Abstract Submitted
a microelectronic device comprises a stack structure overlying a source tier. the stack structure comprising a vertically alternating sequence of conductive structures and insulative structures arranged in tiers. the microelectronic device comprises a staircase structure within the stack structure and having steps comprising lateral edges of the tiers, support structures vertically extending through the stack structure and within a horizontal area of the staircase structure, and conductive contacts vertically extending through the stack structure and horizontally neighboring the support structures within the horizontal area of the staircase structure. each of the conductive contacts has a horizontally projecting portion in contact with one of the conductive structures of the stack structure at one of the steps of the staircase structure. related memory devices, electronic systems, and methods of forming the microelectronic devices are also described.